1. Synthesis and characterization of PbTe thin films by atomic layer deposition.
- Author
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Zhang, K., Pillai, A. D. Ramalingom, Tangirala, M., Nminibapiel, D., Bollenbach, K., Cao, W., Baumgart, H., Chakravadhanula, V. S. K., Kübel, C., and Kochergin, V.
- Subjects
LEAD telluride crystals ,THIN films ,ATOMIC layer deposition ,X-ray diffraction measurement ,POLYCRYSTALS ,SCANNING electron microscopy - Abstract
PbTe thin films on silicon substrates were prepared by an atomic layer deposition (ALD) for the first time, using lead (II) bis (2,2,6,6-tetramethyl-3,5-heptanedionato) and (trimethylsilyl) tellurid as ALD precursors, at deposition temperature as low as 170 °C. The formation of a PbTe thin film on the Si substrates was strongly dependent on the growth temperature. X-ray diffraction measurement indicated that thin films were polycrystalline and have characteristic face-centered cubic rock salt structure with a preferential (200) orientation. Scanning electron microscopy showed PbTe thin films were grown in the Volmer-Weber island mode. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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