1. White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias
- Author
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Hsing-Chao Chen, Makoto Shiojiri, Min-Cheng Chen, Hon Kuan, W. C. Sun, Jer-Ren Yang, Wei-Chih Li, and Yu-Hsun Huang
- Subjects
Materials science ,business.industry ,Wide-bandgap semiconductor ,Heterojunction ,Gallium nitride ,Electroluminescence ,Electronic, Optical and Magnetic Materials ,law.invention ,Atomic layer deposition ,chemistry.chemical_compound ,chemistry ,law ,Optoelectronics ,Electrical and Electronic Engineering ,Chromaticity ,business ,Light-emitting diode ,Diode - Abstract
White-light electroluminescence (EL) from n-type ZnO (n-ZnO)/p-type GaN (p-GaN) heterojunction light-emitting diodes operated at reverse breakdown bias was reported. The n-ZnO epilayers were grown by atomic layer deposition on p-GaN. The electron tunneling from the deep-level states near the ZnO/GaN interface to the conduction band in n-ZnO is responsible for the reverse breakdown. The EL spectrum was composed of the blue light at 450 nm and the broadband around 550 nm, which originated from the Mg acceptor levels in p-GaN and the deep-level states near the ZnO/GaN interface, respectively. The chromaticity coordinate of the EL spectrum was (0.31, 0.36), which is very close to (0.33, 0.33) of the standard white light.
- Published
- 2011