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The kinetics of pulse conduction in silver chloride single crystals is investigated in the temperature range 12–300 K upon picosecond excitation with x-ray bremsstrahlung. It is found that the experimentally observed concentration of conduction electrons is nearly twice as high as the concentration of electron-hole pairs generated by an exciting pulse. This effect is associated with the chain multiplication of band charge carriers.

The temperature dependence of the pulse conductivity for CsI crystals upon excitation with an electron beam (0.2 MeV, 50 ps, 400 A/cm2) at a time resolution of 150 ps is investigated. Under experimental conditions, the time of bimolecular recombination of electrons and holes (V k centers) is directly measured in the temperature range 100–300 K. This made it possible to calculate the temperature dependence of the effective recombination cross section S(T)=7.9×10−8 T2 cm2. The temperature dependence of the conductivity σ(T) is interpreted within the model of the separation of genetically bound electron-hole pairs. The activation energy of this process is found to be E G =0.07 eV.

The first experimental results on the room-temperature pulsed conductivity of silver bromide excited in a pulsed mode by the X-ray bremsstrahlung radiation are reported. The data indicate that photosensitive materials are probably featuring the process of charge carrier multiplication during a time on the order of 10−9 s. The concentration of electrons in the conduction band of AgBr is estimated. The experimental concentration of the conduction electrons is about ten times greater than the concentration of electron-hole pairs created by the exciting radiation pulse.

This paper discusses the temperature dependence of the pulsed conductivity of a KCl crystal in the interval 12–300K when it is excited by an electron beam (0.2 MeV, 50 ps, 300A/cm2) with a time resolution of 150 ps. It is shown that the electron lifetime is τ