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1. Silicon oxynitride films: Ion bombardment effects, depth profiles, and ionic polarization, studied with the aid of the Auger parameter.

Author

Rivière, J. C., Crossley, J. A. A., and Sexton, B. A.

Subjects
ION bombardment, THIN films, NITRIDES, AUGER effect, PHOTOELECTRON spectroscopy
Abstract

Presents a study that investigated the ionic screening effects in thin amorphous silicon oxynitride films using x-ray excited Auger electron spectroscopy and x-ray photoelectron spectroscopy. Effects of ion bombardment on the thin films; Examination of the depth profile of the thin films; Evaluation of the Auger parameter variation with oxygen/(oxygen + nitrogen).

Published
1988

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