1. Non-polar true-lateral GaN power diodes on foreign substrates.
- Author
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Wang, Jia, Yu, Guo, Zong, Hua, Liao, Yaqiang, Lu, Weifang, Cai, Wentao, Hu, Xiaodong, Xie, Ya-Hong, and Amano, Hiroshi
- Subjects
GALLIUM nitride ,SCHOTTKY barrier diodes ,DIODES ,AVALANCHE diodes ,MODULATION-doped field-effect transistors ,SAPPHIRES - Abstract
We have demonstrated non-polar GaN power diodes (Schottky barrier diode and p–n junction diode) on foreign substrates featuring the true-lateral p–n and metal–semiconductor junctions. The diodes were fabricated on GaN islands laterally overgrown on the mask-patterned sapphire and Si substrates by metalorganic vapor phase epitaxy. The anode and cathode were formed on the opposed a-plane sidewalls of the island, making the device architecture essentially like the 90° rotation of the desired true-vertical power diodes. The ideality factor of the Schottky barrier diode remained 1.0 (from 1.00 to 1.05) over 7 decades in current. Specifically, a high critical electric field of 3.3 MV/cm was demonstrated on the p–n junction diode with avalanche capability. These performances reveal a strong potential of non-polar GaN with the true-lateral junctions for high power applications. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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