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Nanocomposites formed by aluminum-doped zinc oxide nanoparticles (AZO–NP) and multiwall carbon nanotubes (CNT) are proposed here as a promising material for UV light sensing applications, with the great advantage of operating in air, at room temperature, and at low voltage. Nanocomposite layers were prepared with different AZO:CNT weight ratios by a simple methodology at room temperature. They were characterized by means of UV–Vis spectroscopy, scanning and transmission electron microscopies (SEM and TEM), and X-ray photoelectron spectroscopy (XPS). The interaction between the two nanomaterials was demonstrated by comparing the properties of the nanocomposite with the ones shown by the AZO–NPs. Dense AZO–CNT nanocomposite layers were deposited between two metal electrodes on a SiO2/Si substrate, and the electrical properties were investigated in dark condition and under UV light irradiation. The electrical response to the UV light was a sudden current increase that reduced when the light was switched off. Several UV on/off cycles were performed, showing good repeatability and stability of the response. The mechanisms involved in the electrical response are discussed and compared to the ones previously reported for ZnO–CNT nanocomposites. [ABSTRACT FROM AUTHOR]

Cu nanoparticles were produced by using solid-state dewetting (dry) of a 1.3 nm Cu layer or laser ablation of a Cu solid target (wet) in acetone and methanol. The morphology and chemical composition of the nanoparticles were investigated as a function of the synthesis methods and their key parameters of the annealing temperature (200–500 °C) and the liquid environment during the ablation. Cu nanoparticles were then embedded in transparent conductive oxide (TCO) films as aluminum-doped zinc oxide (AZO) or zirconium-doped indium oxide (IZrO); the TCObott/Cu nanoparticle/TCOtop structures were synthesized with all combinations of AZO and IZrO as the top and bottom layers. The goal was to achieve a plasmonic and conductive structure for photovoltaic applications via a comparison of the involved methods and all fabricated structures. In particular, solid-state dewetting produced faceted or spherical (depending on the annealing temperature) nanoparticles with an average size below 150 nm while laser ablation produced spherical nanoparticles below 250 nm. Dry and wet plasmonic conductive structures as a function of the TCOs employed and the temperature of annealing could reach a sheet resistance of 86 Ω/sq. The energy band-gap Egap, absorbance, transmittance, and reflectance of the plasmonic conductive structures were investigated in the UV–vis–NIR range. They showed a dependence on the sequence of the top and bottom TCO, with best transmittances of 89.4% for the dry plasmonic conductive structure and 84.7% for the wet plasmonic conductive structure. The latter showed a higher diffused transmittance of between 10–20% in the visible range. [ABSTRACT FROM AUTHOR]

Aluminum-doped zinc oxide (AZO) is an electrically conductive and optically transparent material with many applications in optoelectronics and photovoltaics as well as in the new field of plasmonic metamaterials. Most of its applications contemplate the use of complex and nanosized materials as substrates onto which the AZO forms the coating layer. Its morphological characteristics, especially the conformality and crystallographic structure, are crucial because they affect its opto-electrical response. Nevertheless, it was difficult to find literature data on AZO layers deposited on non-planar structures. We studied the AZO growth on silicon-nanowires (SiNWs) to understand its morphological evolution when it is formed on quasi one-dimensional nanostructures. We deposited by sputtering different AZO thicknesses, leading from nanoclusters until complete incorporation of the SiNWs array was achieved. At the early stages, AZO formed crystalline nano-islands. These small clusters unexpectedly contained detectable Al, even in these preliminary phases, and showed a wurtzite crystallographic structure. At higher thickness, they coalesced by forming a conformal polycrystalline shell over the nanostructured substrate. As the deposition time increased, the AZO conformal deposition led to a polycrystalline matrix growing between the SiNWs, until the complete array incorporation and planarization. After the early stages, an interesting phenomenon took place leading to the formation of hook-curved SiNWs covered by AZO. These nanostructures are potentially very promising for optical, electro-optical and plasmonic applications. [ABSTRACT FROM AUTHOR]

Herein, Cu nanostructures are obtained by solid-state dewetting of 9 nm copper layer (dry) or by ablating copper target, using a nanosecond pulsed laser at 1064 nm, in acetone and isopropyl alcohol (wet). The Cu nanostructures are embedded in aluminum-doped zinc oxide layer. Then, the electrical, optical, and morphological properties of the two kinds of systems, as a function of their synthesis parameters, are investigated. The aim is to compare the two fabrication methods and select the main conditions to achieve the best system for photovoltaic applications. The main differences, exhibited by the wet and dry processes, were in the shape and size of the Cu nanostructures. Dewetting in nitrogen produces faceted nanoparticles, with an average size below 150 nm, while laser ablation originates spherical and smaller nanoparticles, below 50 nm. Dry system underwent to thermal annealing, which improves the electrical properties, compared to the wet system, with a sheet resistance of 103 vs. 106 Ω/sq, respectively; finally, the dry system shows a maximum transmittance of 89.7% at 697 nm, compared to the wet system in acetone, 88.4% at 647 nm, as well as in isopropyl alcohol, 86.9% at 686 nm. Moreover, wet systems show higher transmittance in NUV. [ABSTRACT FROM AUTHOR]

Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O + or Ar + ion beams (30–350 keV, 3 × 10 15 –3 × 10 16 ions/cm 2 ) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature. [ABSTRACT FROM AUTHOR]