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The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material. [ABSTRACT FROM AUTHOR]

Abstract: We report on the development of high quality, strain compensated gain mirror for 1120nm vertical external-cavity surface-emitting lasers (VECSELs). The gain mirror was grown by molecular beam epitaxy and comprised a total of six Ga0.69In0.31As quantum wells. The effect of the strain compensation has been assessed by measuring the curvature of the wafer and by mapping the photoluminescence to identify the non-emissive dark areas. We demonstrate that ∼91% strain compensation with GaAs0.85P0.15 is sufficient to remove the dark lines corresponding to areas with structural defects in the gain mirror structure. Rapid thermal annealing studies revealed that the strain compensation is efficient in preventing the appearance of dark lines even for samples that were annealed at temperatures as high as 700°C for a considerable time. The strain compensated gain mirror was used to demonstrate a VECSEL emitting at 1120nm. [Copyright &y& Elsevier]