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Abstract: Molecular beam epitaxy grown MgxZn1−xO (x ⩽0.3) layers were implanted at room temperature with 150keV 166Er+ ions in a fluence range of 5×1015–3×1016 cm−2. Evolution of ion-induced damage and structural changes were studied by a combination of Rutherford backscattering spectrometry, nuclear reaction analysis and time-of-flight elastic recoil detection analysis. Results show that damage production enhances in both Zn- and O-sublattices with increasing the Mg content in the MgZnO. However, MgZnO as well as pure ZnO exhibits a high degree of dynamic annealing and MgZnO can not be amorphized even at the highest ion fluence used. Annealing of heavily damaged ZnO leads to a strong surface erosion and thinning of the film. Increasing the Mg content suppresses the surface evaporation in high fluence implanted MgZnO but leads to a strong surface decomposition accompanied with a Mg-rich surface layer formation during post-implantation annealing. [Copyright &y& Elsevier]

Abstract: The effect of tensile strain on Sb incorporation in Si and its activation during post-implantation annealing has been studied by a combination of Rutherford backscattering/channeling spectrometry, secondary ion mass spectrometry, X-ray diffraction and 4-point probe measurements. Our results show that, for Sb implanted samples a tensile strain has an important role for dopant behavior. Particularly, increasing the tensile strain in the Si layer from 0 to 0.8% leads to an enhancement of the fraction of incorporated Sb atoms in substitutional sites already during implantation from ~7 to 30%. Furthermore, 0.8% strain in antimony doped Si gives ~20% reduction in the sheet resistance in comparison to the unstrained sample. [Copyright &y& Elsevier]

Abstract: A route for synthesizing high Mg content single-phase wurtzite MgZnO films having band gaps in the solar-blind region is demonstrated by employing molecular beam epitaxy on Al2O3 substrates. Importantly, a low Mg content “quasi-homo” buffer, Mg0.17Zn0.83O, was applied to accommodate a host of structural discrepancies and therefore, avoiding phase separation in a high Mg content film, Mg0.55Zn0.45O, as proved by X-ray diffraction. The Mg fraction in the overgrown single-phase epilayer, Mg0.55Zn0.45O, was confirmed by Rutherford backscattering spectrometry. [Copyright &y& Elsevier]