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Start Over Author "Osinsky, A. V." Topic band gaps
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1. Some technology aspects for quantum enestor through AIIIBV multicomponent nanoepitaxy.

Author

Osinsky, V. I., Masol, I. V., Lyahova, N. N., Suhoviy, N. O., Onachenko, M. C., and Osinsky, A. V.

Subjects
NITRIDES, QUANTUM dots, PHOTON detectors, BAND gaps, NANOSTRUCTURED materials, LIGHT
Abstract

For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing based on AIIIBV direct bandgap multicomponent heterogeneous nanostructures and their light energy storing capability, by an analogy with the photosynthetic process in plants. [ABSTRACT FROM AUTHOR]

Published
2017
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