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The development of blue‐emissive ambipolar organic semiconductor is an arduous target due to the large energy gap, but is an indispensable part for electroluminescent device, especially for the transformative display technology of simple‐structured organic light‐emitting transistor (SS‐OLET). Herein, we designed and synthesized two new dibenzothiophene sulfone‐based high mobility blue‐emissive organic semiconductors (DNaDBSOs), which demonstrate superior optical property with solid‐state photoluminescent quantum yield of 46–67 % and typical ambipolar‐transporting properties in SS‐OLETs with symmetric gold electrodes. Comprehensive experimental and theoretical characterizations reveal the natural of ambipolar property for such blue‐emissive DNaDBSOs‐based materials is ascribed to a synergistic effect on lowering LUMO level and reduced electron injection barrier induced by the interfacial dipoles effect on gold electrodes due to the incorporation of appropriate DBSO unit. Finally, efficient electroluminescence properties with high‐quality blue emission (CIE (0.179, 0.119)) and a narrow full‐width at half‐maximum of 48 nm are achieved for DNaDBSO‐based SS‐OLET, showing good spatial control of the recombination zone in conducting channel. This work provides a new avenue for designing ambipolar emissive organic semiconductors by incorporating the synergistic effect of energy level regulation and molecular‐metal interaction, which would advance the development of superior optoelectronic materials and their high‐density integrated optoelectronic devices and circuits. [ABSTRACT FROM AUTHOR]