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In this paper, we have presented an atomistic quantum simulation study to investigate the device performances of GaSb/InAs heterojunction tunnel field-effect transistors (TFETs) with nanometer body thicknesses. It is revealed that the thin junction induced quantum confinement effect results in a heterojunction type transition from type-III to type-II as the junction thickness reduces, which can be used as an effective modulation of the TFET device performance. It is found that as the channel thickness decreases, both the ON current and OFF current of the device decrease significantly due to the quantum confinement induced effective band gap enlargement. In addition, the OFF current of the heterojunction GaSb/InAs TFET is always larger than that of the homojunction InAs TFET, which is possibly caused by the GaSb/InAs interfacial state assisted tunneling. It is also revealed that the subthreshold swing of the heterojunction TFET does not change much as the channel thickness is reduced. [ABSTRACT FROM AUTHOR]

Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logic devices. Here, we devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolar pn to np diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel. [ABSTRACT FROM AUTHOR]