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The first indiumsilicate oxysulfide Ba2In2Si3O10S ( 1) was obtained by an alkali polychalcogenide flux method through a high-temperature solid-state reaction. It crystallizes in the non-centrosymmetric space group Pca21 (No. 29), with a = 23.060(6), b = 5.2954(6), c = 8.779(2) Å, and Z = 4. Its three-dimensional (3D) framework is constructed from one-dimensional (1D) infinite ∞1[In2O7S2/2] double octahedral chains bridged by corner-sharing Si tetrahedral trimers [Si3O10]8-, yielding a 3D framework with the channels filled with Ba2+ cations along the b direction. It is unprecedented in that the two distorted indium octahedra in 1 face-share to form a [In2O7S2] dimer in indium oxides and oxide chalcogenides. [ABSTRACT FROM AUTHOR]

The new title compounds are synthesized by solid state reactions of Ba, Ga2S9, Ge (Si), and S in a molar ratio of 2:4:1:4 (quartz tubes, 300 °C for 5 h, 650 °C for 10 h, and 980 °C for 5 d) and characterized by single crystal XRD, IR and UV/VIS/NIR diffuse reflectance spectroscopy, second harmonic generation measurements, laser-induced damage threshold measurements, and DFT electronic band structure calculations. [ABSTRACT FROM AUTHOR]

Single crystals of BaGeOSe2 are prepared by solid state reaction of a stoichiometric mixture of GeO2, Ba, Se, and extra KI as a flux (evacuated quartz tubes, 1. [ABSTRACT FROM AUTHOR]