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In this paper, all electro-optic solid immersion lens (EOSIL) is introduced, which is made of GaAs. A reflecting external electro-optic measuring system based on the EOSIL is built. With a hemispherical GaAs EOSIL used as the external probe, 0.7 µm spot size is obtained when the wavelength of the probing beam from a laser diode is 1.3 µm and a microscope objective with 0.3 numerical aperture is used. The principle of the measuring system is analyzed by Jones matrix. By using the system, the electrical signals propagating on a microstrip transmission line are successfully measured. The voltage sensitivity about 5 mV/\(\sqrt {Hz} \) is measured when 10 kHz sinusoidal electric signal is applied on the microstrip line.

In this paper an external electro-optic measuring system based on a hemispherical GaAs probe is presented. By using the system, the electrical signals propagating on a microstrip transmission line are successfully measured. The spatial resolution of the system, which is limited by the focused probing spot size, is about 0.5 micrometers , when the wavelength of the probing beam is 1.3 micrometers .© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.