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The recent development of BiCMOS and advanced bipolar and merged bipolar CMOS and DMOS technologies requires the enhancement of both models and parameter extraction strategies for the bipolar device. In order to take into account special behavior such as the base push-out effect or the nonideal base current, new features have been added to the classical SPICE BJT (bipolar junction transistor) model. A flexible software tool has been developed to allow the use of different parameter extraction schemes suitable for a wide range of device behaviors. Experimental validations have been performed in DC analysis. The RMS (root mean square) error on current gain is less than 2%. >

In deep submicron CMOS and BiCMOS technologies, antenna effects affect the floating gate charge of conventional floating gate test structures, dedicated to capacitor matching measurement. In this paper, a new pseudo-floating gate test structure is designed. After test structure and modeling presentation, the testing method and results are given for several capacitor layouts (poly-poly and metal-metal).