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Tungsten (W) and W alloys are regarded as the most promising candidates for plasma facing materials (PFMs), which will be widely used in the next generation of fusion reactors. However, blistering in W-PFM induced by extremely high fluxes of low-energy hydrogen (H) and helium (He) ions irradiation will seriously influence the plasma stability and limits the lifetime of PFM. We systematically investigate the interaction between H and He interaction in W using molecular dynamics (MD) calculations. The vacancy clusters can capture a large amount of H/He, and the H-He-vacancy clusters have much higher binding energy to He than to H. The binding energy of H-He-vacancy clusters to vacancy/W is positive, and H-He-vacancy clusters have strong trapping of W atoms and vacancies. He will strongly affect the H behavior in W, He atoms and He cluster will trap H atoms, thereby preventing the diffusion of H in W. [ABSTRACT FROM AUTHOR]

Abstract Atomic-level studies have been performed to investigate the hydrogen behavior near a 1/2<111>{110} edge dislocation and a 1/2<111> screw dislocation in α iron. Molecular statics analysis has been carried out to determine the stress distributions and hydrogen binding energy around the dislocation cores. The results reveal that the hydrogen binding is more sensitive to the hydrostatics stress than the shear stress around the edge dislocation, while the shear stress plays a leading role on the hydrogen binding around the screw dislocation. In addition, nudged elastic band (NEB) calculations have been applied to explore different migration paths and the corresponding migration energy barriers of a single hydrogen atom at the dislocation cores. It is of interest to note that both edge and screw dislocations are not able to offer fast pipe diffusion of hydrogen atoms along the dislocation line, as normally considered. Instead, hydrogen atoms prefer to diffuse slowly along oblique paths crossing the edge dislocation line on the slip plane and spiral paths surrounding the screw dislocation line. Furthermore, molecular dynamics simulations have been performed to study the diffusion behavior of hydrogen at the dislocation cores, which verifies the results of NEB calculations. Highlights • The distribution of the stress and hydrogen binding energies around the dislocations together with their correlations. • Neither the edge nor screw dislocations can provide fast diffusion pipes for hydrogen in α iron. • The hydrogen diffusion mechanism near the dislocation cores at different temperatures. [ABSTRACT FROM AUTHOR]

• A possible mechanism for the formation of vacancy dislocation loops in α-Fe is proposed. • Vacancy-NH clusters prefer to shape into 2D clusters, especially on (211) planes. • The presence of H can greatly promote the growth of vacancy dislocation loops. Genetic algorithm was applied to search the energy minimization configuration of vacancy clusters in α-Fe. Molecular statics calculations and dynamics annealing relaxation were employed to calculate the formation and binding energies of vacancies and 3D vacancy or vacancy-hydrogen (H) clusters, as well as 2D vacancy or vacancy-H clusters on (111), (011) and (211) planes. Our calculations show that vacancies prefer to form 3D clusters and vacancy dislocation loops are difficult to form, while vacancy-H clusters prefer to shape into 2D clusters, especially on (211) planes. Since H prefers the directional bonding, a vacancy cluster with H atoms tend to form a vacancy dislocation loop with its slip direction along the 〈100〉 direction and on the (211) habit plane. Our results are consistent with the experimental observations, and provide a possible mechanism for the formation of vacancy dislocation loops in α-Fe. Furthermore, we have also explored how dislocation loops trap self-interstitial atoms, vacancies and H atoms. It is of interest to note that H atoms strongly bound to a 〈100〉 vacancy dislocation loop, and are able to enhance the ability for the dislocation loop to further trap vacancies and reduce its ability to absorb self-interstitial atoms, thus promoting the growth of the 〈100〉 vacancy dislocation loops. [ABSTRACT FROM AUTHOR]