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This article describes a comparative study of Ti/Au, Ti/Pd/Au, Ti/Pt/Au, Mo/Au, Mo/Pt/Au, and Pd/Mo/Pt/Au Ohmic contacts to both n- and p-In0.65Ga0.35Sb. For In0.65Ga0.35Sb:Te doped to 2×1018 cm-3, specific contact resistivities ρc below 2×10-6 Ω cm2 were demonstrated. Lower ρc in the 10-7 Ω cm2 range were also achieved for In0.65Ga0.35Sb:C doped to 4.5×1019 cm-3. The influence of surface preparation has been investigated on unannealed Mo/Pt/Au contacts and further improvements of the specific contact resistivities to as low as (8.7±0.7)×10-7 and (2.9±1.7)×10-8 Ω cm2 have been achieved for n- and p-InGaSb, respectively. [ABSTRACT FROM AUTHOR]

In this letter, we report on high-speed InAlAsSb/InGaSb/InAlAsSb double heterojunction bipolar Transistors (HBTs) (DHBT) fabricated using a conventional triple-mesa process. Current gain cutoff frequencies fT of 52 GHz and maximum oscillation frequencies fMAX of 48 GHz were extracted from measured scattering parameters for devices with 1 x 15 µ² emitter size. To the best of our knowledge, these results are the first RF performance ever reported, and they demonstrate the feasibility and potential of InGaSb-based HBT for high-speed electronics applications. [ABSTRACT FROM AUTHOR]