1. Static and Dynamic Characterization of 6.5-kV 100-A SiC Bipolar PiN Diode Modules.
- Author
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Elasser, Ahmed, Agamy, Mohammed S., Nasadoski, Jeffrey, Losee, Peter A., Bolotnikov, Alexander V., Stum, Zachary, Raju, Ravisekhar, Stevanovic, Ljubisa, Mari, Jorge, Menzel, Matthias, and Bastien, Bertrand
- Subjects
PIN diodes ,STATICS ,DYNAMICS ,SILICON carbide ,SWITCHING circuits ,BIPOLAR transistors - Abstract
High-voltage and high-current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6 \times 6\ \mm^2 SiC chips that are fabricated on 3-in SiC substrates. Individual chips were also packaged in an ISOPLUS™ package and used to perform switching tests on the diodes. The modules have been fully characterized under static and dynamic conditions. These modules are targeted for high-voltage high-frequency applications as well as antiparallel diodes for 6.5-kV insulated gate bipolar transistors, insulated gate commutated thyristors, and injection enhanced insulated gate bipolar transistors. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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