1. Photovoltaic effects in BiFeO3
- Author
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Yang, SY, Martin, LW, Byrnes, SJ, Conry, TE, Basu, SR, Paran, D, Reichertz, L, Ihlefeld, J, Adamo, C, Melville, A, Chu, YH, Yang, CH, Musfeldt, JL, Schlom, DG, Ager, JW, and Ramesh, R
- Subjects
bismuth compounds ,ferroelectric thin films ,indium ,photovoltaic effects ,polarisation ,tin compounds ,Applied Physics ,Engineering ,Physical Sciences ,Technology - Abstract
We report a photovoltaic effect in ferroelectric BiFeO3 thin films. The all-oxide heterostructures with SrRuO3 bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages ∼0.8-0.9 V and external quantum efficiencies up to ∼10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO3 /tin doped indium oxide interface. © 2009 American Institute of Physics.
- Published
- 2009