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Developing low‐cost and high‐performance n‐type polymer semiconductors is essential to accelerate the application of organic thermoelectrics (OTEs). To achieve this objective, it is critical to design strong electron‐deficient building blocks with simple structure and easy synthesis, which are essential for the development of n‐type polymer semiconductors. Herein, we synthesized two cyano‐functionalized highly electron‐deficient building blocks, namely 3,6‐dibromopyrazine‐2‐carbonitrile (CNPz) and 3,6‐Dibromopyrazine‐2,5‐dicarbonitrile (DCNPz), which feature simple structures and facile synthesis. CNPz and DCNPz can be obtained via only one‐step reaction and three‐step reactions from cheap raw materials, respectively. Based on CNPz and DCNPz, two acceptor–acceptor (A–A) polymers, P(DPP‐CNPz) and P(DPP‐DCNPz) are successfully developed, featuring deep‐positioned lowest unoccupied molecular orbital (LUMO) energy levels, which are beneficial to n‐type organic thin‐film transistors (OTFTs) and OTEs performance. An optimal unipolar electron mobility of 0.85 and 1.85 cm2 V−1 s−1 is obtained for P(DPP‐CNPz) and P(DPP‐DCNPz), respectively. When doped with N‐DMBI, P(DPP‐CNPz) and P(DPP‐DCNPz) show high n‐type electrical conductivities/power factors of 25.3 S cm−1/41.4 μW m−1 K−2, and 33.9 S cm−1/30.4 μW m−1 K−2, respectively. Hence, the cyano‐functionalized pyrazine CNPz and DCNPz represent a new class of structurally simple, low‐cost and readily accessible electron‐deficient building block for constructing n‐type polymer semiconductors. [ABSTRACT FROM AUTHOR]

Polythiophenes, built on head‐to‐head (HH) linked 3,3′‐oligomer ethylene glycol‐2,2′‐bithiophene (gT2), have simple chemical structure, good backbone planarity, and relatively high‐lying the lowest unoccupied molecular orbital (LUMO) energy levels, hence showing excellent p‐type performance in organic electrochemical transistors (OECTs) with µC* of several hundred F cm−1 V−1 s−1. In this study, sequential cyano substitution is utilized to enable transformation of charge carrier polarity from p‐type to n‐type in OECTs, based on the parent polythiophene g4T2‐T2. With the increase of cyano group number, the polythiophenes exhibit gradually lowered LUMO levels from −2.55 to −3.90 eV. As a result, from g4T2‐T2 to CNg4T2‐CNT2, the p‐type performance dramatically diminishes accomplished by the enhancement of n‐type one when applied in OECTs. To the authors' delight, polymer CNg4T2‐CNT2 with the highest content of cyano groups exhibits a remarkable n‐type µC* of 27.01 F cm−1 V−1 s−1 and high gm,norm of 6.75 S cm−1 with negligible p‐type character. This study demonstrates that sequential cyano substitution provides a powerful approach for developing high‐performance n‐type polymers for OECT applications. [ABSTRACT FROM AUTHOR]