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Developing low‐cost and high‐performance n‐type polymer semiconductors is essential to accelerate the application of organic thermoelectrics (OTEs). To achieve this objective, it is critical to design strong electron‐deficient building blocks with simple structure and easy synthesis, which are essential for the development of n‐type polymer semiconductors. Herein, we synthesized two cyano‐functionalized highly electron‐deficient building blocks, namely 3,6‐dibromopyrazine‐2‐carbonitrile (CNPz) and 3,6‐Dibromopyrazine‐2,5‐dicarbonitrile (DCNPz), which feature simple structures and facile synthesis. CNPz and DCNPz can be obtained via only one‐step reaction and three‐step reactions from cheap raw materials, respectively. Based on CNPz and DCNPz, two acceptor–acceptor (A–A) polymers, P(DPP‐CNPz) and P(DPP‐DCNPz) are successfully developed, featuring deep‐positioned lowest unoccupied molecular orbital (LUMO) energy levels, which are beneficial to n‐type organic thin‐film transistors (OTFTs) and OTEs performance. An optimal unipolar electron mobility of 0.85 and 1.85 cm2 V−1 s−1 is obtained for P(DPP‐CNPz) and P(DPP‐DCNPz), respectively. When doped with N‐DMBI, P(DPP‐CNPz) and P(DPP‐DCNPz) show high n‐type electrical conductivities/power factors of 25.3 S cm−1/41.4 μW m−1 K−2, and 33.9 S cm−1/30.4 μW m−1 K−2, respectively. Hence, the cyano‐functionalized pyrazine CNPz and DCNPz represent a new class of structurally simple, low‐cost and readily accessible electron‐deficient building block for constructing n‐type polymer semiconductors. [ABSTRACT FROM AUTHOR]

n‐Type semiconducting polymers with high thermoelectric performance remain challenging due to the scarcity of molecular design strategy, limiting their applications in organic thermoelectric (OTE) devices. Herein, we provide a new approach to enhance the OTE performance of n‐doped polymers by introducing acceptor‐acceptor (A‐A) type backbone bearing branched ethylene glycol (EG) side chains. When doped with 4‐(2,3‐dihydro‐1,3‐dimethyl‐1H‐benzimidazol‐2‐yl)‐N,N‐dimethylbenzenamine (N‐DMBI), the A‐A homopolymer PDTzTI‐TEG exhibits n‐type electrical conductivity (σ) up to 34 S cm−1 and power factor value of 15.7 μW m−1 K−2. The OTE performance of PDTzTI‐TEG is far greater than that of homopolymer PBTI‐TEG (σ=0.27 S cm−1), indicating that introducing electron‐deficient thiazole units in the backbone further improves the n‐doping efficiency. These results demonstrate that developing A‐A type polymers with EG side chains is an effective strategy to enhance n‐type OTE performance. [ABSTRACT FROM AUTHOR]