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Cr3+‐activated near‐infrared (NIR) phosphors have gained extensive attention for use in NIR phosphor‐converted light‐emitting diodes (pc‐LEDs), which are required for smart NIR spectroscopy techniques. Nevertheless, obtaining broadband NIR‐emitting phosphors with outstanding thermal stabilities and photoluminescence (PL) efficiencies remains a significant challenge. Herein, considering NaSr2XGe5O14 (X = Al, Ga, Sc, and In) as hosts, which possess a large band gap and multiple sites for the substitution of Cr3+ ions. NaSr2XGe5O14:Cr3+ phosphors are successfully prepared using a solid‐state reaction technology. Upon blue light excitation, the phosphors cover a broad NIR emission band in 650–1100 nm region. Notably, an abnormal blueshift and PL enhancement are observed following the substitution of Al/Ga with Sc/In. In particular, the PL internal quantum efficiency is improved from 34.5% (NaSr2GaGe5O14: Cr3+) to 87.5% (NaSr2ScGe5O14: Cr3+). Moreover, the manufactured NIR pc‐LED exhibited an exceptional photoelectric efficiency of 17.7% with an NIR output power of 10.2 mW at 20 mA, and its potential application in nondestructive detection is demonstrated. [ABSTRACT FROM AUTHOR]

For high-efficiency lighting and wide color gamut backlight display, high-quality narrow-band red phosphors for WLEDs are still in high demand. Herein, a novel red-emitting fluoride phosphor Cs2NaGaF6:Mn4+ was successfully synthesized by a simple two-step co-precipitation method and exhibits ultra-intense zero-phonon lines (ZPLs) and long wavelength phonon sidebands under 468 nm blue light irradiation. The ZPL emission peak of Cs2NaGaF6:Mn4+ was located at 627 nm, which is much stronger than its υ6 vibration peak, more matchable with the eye-sensitive region of humans, and beneficial for obtaining higher luminous efficiency of WLEDs. Interestingly, the υ6 vibration peak of this red phosphor is at 636.5 nm, which is larger than that of the common fluoride phosphor A2BF6:Mn4+ (usually at about 630 nm, represented by K2SiF6:Mn4+) at about 6.5 nm. Thanks to the longer wavelength of the υ6 vibration peak, the chromaticity coordinates (0.7026, 0.2910) with a larger x-coordinate value were realized, leading to a potentially wider color gamut of WLEDs. In addition, this phosphor has high thermal stability and its emission intensity at 423 K remains 93.7% of the initial intensity at room temperature. The lumen efficiency of WLED1 packaged with a mixture of Cs2NaGaF6:Mn4+ and YAG:Ce3+ on the InGaN blue chip is 115.7 lm W−1 with the color temperature (Tc) = 3390 K and the colour rendering index (Ra) = 92.5 under 20 mA driving current. The chromaticity coordinates of WLED2 packaged with Cs2NaGaF6:Mn4+ and β-SiAlON:Eu2+ on the InGaN blue chip are (0.3149, 0.3262) and the calculated color gamut is up to 118.4% (NTSC). These results indicate that Cs2NaGaF6:Mn4+ red phosphors have promising applications in the high-quality lighting and display fields. [ABSTRACT FROM AUTHOR]

An oxyfluoride red phosphor Cs2MoO2F4:Mn4+ was synthesized via a facile co-precipitation route with a certain molecular ratio of CsF and MoO3. X-ray diffraction analysis and its Rietveld refinement reveal that Cs2MoO2F4:Mn4+ crystallized in an orthorhombic structure with the Amam (63) space group. Upon blue light excitation, Cs2MoO2F4:Mn4+ exhibits a series of sharp red emission lines around ∼634 nm and the zero-phonon line (ZPL) is visible at 619 nm. The optimal doping amount of Mn4+ in Cs2MoO2F4 is 1.12%, and the decay curves show a good fit with the single exponential decay model. The fluorescence lifetime of the synthesized phosphors is relatively short and calculated as 3.18 to 2.46 ms, the Mn4+ ions in Cs2MoO2F4 experience a strong crystal field strength with a Dq/B of ∼4.87, and the distinct nephelauxetic ratio β1 is determined to be ∼1.0226. The thermal quenching mechanism of Mn4+ was also studied. Furthermore, by using the as-synthesized Cs2MoO2F4:Mn4+ phosphor as a red component and β-SiALON as a green light component, a WLED was fabricated with a high luminous efficacy of 114.70 lm·W−1 and wide color gamut of 109.1% of the National Television Standard Committee (NTSC) value. Hence, the Cs2MoO2F4:Mn4+ phosphor with a short fluorescence lifetime could potentially be an efficient red compensator for application in rapid-response backlight displays. [ABSTRACT FROM AUTHOR]

• ScP 3 O 9 : Cr3+, shows a broadband NIR emission and peaking at ∼900 nm. • The PL intensity of ScP 3 O 9 : Cr3+ can be enhanced by phase transition. • ScP 3 O 9 : Cr3+, Nd3+, Pr3+ exhibits an excellent PL thermal stability (86 % at 423 K). • The NIR pc-LED device can be applied in non-destructive analysis. Near-infrared (NIR) phosphors play an important role in NIR pc-LEDs. However, NIR phosphor with long wavelength are still suffered from low efficiency and poor thermal stability. Herein, a blue light excitable ScP 3 O 9 : Cr3+ NIR phosphor with an emission peak > 880 nm is reported. Significantly, the PL intensity of ScP 3 O 9 : Cr3+ increased to 241 % when the monoclinic phase changes to cubic. Moreover, by co-doping the cubic ScP 3 O 9 : Cr3+ with Nd3+, Pr3+ ions, the PL internal quantum efficiency (IQE) of the phosphors increased from 62 % to 74 %, and the thermal quenching of the phosphor is suppressed effectively (86 % at 423 K). The energy transfer processes between Cr3+ and Nd3+, Pr3+ ions are proposed to be responsible for the enhancement. Furthermore, an efficient NIR pc-LED was fabricated, and gives a high photoelectric efficiency of 16.5 % (26.8 mW at 60 mA). Finally, multifunctional applications of the NIR device in night-vision and nondestructive analysis were demonstrated. An efficient broadband NIR phosphor ScP 3 O 9 : Cr3+, Nd3+, Pr3+ with excellent thermal stability is prepared to fabricate compact NIR pc-LED based on commercial blue diode chips. The NIR pc-LED device is promising for the applications in non-destructive analysis. [Display omitted] [ABSTRACT FROM AUTHOR]

• A brand-new blue-emitting phosphor NaSrScSi 2 O 7 :Eu2+ was prepared. • NaSrScSi 2 O 7 :0.03Eu2+phosphor possesses a high absorption efficiency of 84.35%. • The blue phosphor allows the WLED-2 spectrum to cover more short-wavelength region. A high absorption efficiency blue-emitting phosphor NaSrScSi 2 O 7 :Eu2+ for near-UV-pumped white light-emitting diodes [Display omitted] The Eu2+ ion is extensively used as an activator due to its wide excitation band and high efficiency emission spectrum. However, most Eu2+-activated blue-emitting phosphors have low absorption efficiency in the near-ultraviolet (n-UV) region or lack the short-wavelength blue light emission (<450 nm), resulting in UV light leakage or poor color rendering. Herein, we have successfully prepared a brand-new blue phosphor NaSrScSi 2 O 7 : Eu2+ by solid-state reaction method. The Rietveld refinement of the powder diffraction data, luminescent properties, decay lifetime, quantum efficiencyand thermal quenching have been investigated in detail. Under 345 nm excitation, the NaSrScSi 2 O 7 : 0.03Eu2+phosphor manifests an asymmetric emission spectrum centered at 427 nm, and notably, shows a high absorption efficiency of 84.35%. Finally, we encapsulated two white light-emitting diodes (WLEDs) devices using as-prepared blue-emitting phosphor and three commercial phosphors. At 80 mA drive current, both packaged devices demonstrate warm white light. Meanwhile, the WLED-2 with NaSrScSi 2 O 7 : 0.03Eu2+ blue-emitting phosphor has a lower correlated color temperature of 3726 K, its spectrum complements more short-wavelength spectrum, and the special color rendering index R 6 and R 7 increased from 95.2, 94.5 to 98.3, 96.5, respectively, compared with WLED-1 without present phosphor. These results demonstrate that NaSrScSi 2 O 7 : Eu2+ blue-emitting phosphor is a prospective novel luminescent material for WLEDs. [ABSTRACT FROM AUTHOR]