1. DC and Transient Performance of 4H-SiC Double-Implant MOSFETs.
- Author
-
Losee, Pete A., Matocha, Kevin, Arthur, Stephen D., Nasadoski, Jeffrey, Stum, Zachary, Ganett, Jerome L., Schutten, Michael, Dunne, Greg, and Stevanovic, Ljubisa
- Subjects
METAL oxide semiconductor field-effect transistors ,SILICON carbide ,HIGH temperatures ,SWITCHING circuits ,DIODES ,SILICON oxide ,ANNEALING of metals ,OXIDATION - Abstract
SiC vertical MOSFETs were fabricated and characterized, achieving blocking voltages around 1 kV and specific on-resistances as low as R
SP,ON = 8.3 mΩ · cm². DC and transient characteristics are shown. Room and elevated temperature (up to 200 °C) 600V/5A inductive switching performance of the SiC MOSFETs are shown with turn-on and turn-off transients of approximately 20-40 ns. [ABSTRACT FROM AUTHOR]- Published
- 2008
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