1. Eliminating channeling tail by lower dose preimplantation
- Author
-
Mori Haruhisa, Ogawa Tsutomu, Mami Kimura, and Masataka Kase
- Subjects
inorganic chemicals ,Secondary ion mass spectrometry ,Ion implantation ,Physics and Astronomy (miscellaneous) ,chemistry ,Silicon ,Annealing (metallurgy) ,Semiconductor materials ,Ion channeling ,Analytical chemistry ,chemistry.chemical_element ,Boron ,Spectroscopy - Abstract
We optimized Ge+ and Si+ preimplantation to eliminate the channeling tail and prevent the rapid diffusion of boron and the formation of serious defects. We examined the dependence of the microchanneling of BF+2 implantation or the lattice disorder of preimplanted silicon using secondary‐ion mass spectroscopy and grazing exit Rutherford backscattering spectroscopy. The optimum doses are about 25% those for full amorphization, i.e., preamorphization. The channeling tail is eliminated by disordered layers containing about 60% silicon atoms on irregular sites.
- Published
- 1990