Search

Research on the semiconductors available for thermal neutron detection is of great significance for the development of thermal neutron detection technology and alleviating the dependence on rare 3 He resources. Hexagonal boron nitride (h- 10 BN) materials have attracted wide attention in the thermal neutron detection field because of their higher 10 B content and unique two-dimensional layered lattice structure. Based on the metal organic chemical vapor deposition (MOCVD) method, a 70 μ m h- 10 BN semiconductor detector was fabricated and experimentally studied. The product of the carrier mobility and lifetime ( μ τ ) of the semiconductor was 1.62 × 10 - 7 cm 2 /V. The time response of the detector was less than 12 ns, and the charge collection efficiency (CCE) was more than 90%. The effects on detection performance of the electric field distribution were studied. At 700 V, the maximum depth at which charges were able to be collected was approximately 50 μ m . The energy spectrum of the h- 10 BN to thermal neutrons was observed with distinct peaks. The results indicate that h- 10 BN has great potential in thermal neutron detection due to its high reaction section, compact volume and short trapping distance. [ABSTRACT FROM AUTHOR]