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An analytical model for a novel triple reduced surface field (RESURF) lateral double-diffused metal–oxide–semiconductor (LDMOS) field-effect transistor with a low on-resistance n-type top (N-top) layer is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF LDMOS is presented by solving the 2-D Poisson’s equation, which can also be applied in single, double, and conventional triple RESURF structures. The vertical and lateral breakdown voltages are formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of the N-top layer ( Q\textrm {ntop} ) is derived which can give a guidance for the dose of N-top layer. The triple RESURF LDMOS with a low on-resistance N-top layer is designed and manufactured according to the analytical model. All the analytical results can be well verified by numerical and measured results, showing the validity of the presented model. [ABSTRACT FROM AUTHOR]

A 700 V dual-buried-layer n-channel lateral double-diffused MOSFET (DB-nLDMOS) based on substrate termination technology (STT) is presented and experimentally demonstrated in this paper. The termination region is well analyzed and designed to avoid the premature avalanche breakdown caused by the curved junction. The 2-D and 3-D numerical simulations have been performed to optimize the three key parameters of \Delta L1,\Delta L2, and \Delta L3 which impact on breakdown voltage (BV) greatly in the termination region. The simulation results show that the electric field peak is reduced and premature avalanche breakdown is avoided at the curved abrupt p-well/n-well junction with the STT. The experimental results demonstrate that low $R_{{\mathrm{\scriptscriptstyle ON},\mathrm {sp}}} of 105.6 \textm\Omega \cdot \mathrm cm^2 based on Ld and high BV of 788 V are achieved by the DB-nLDMOS. [ABSTRACT FROM PUBLISHER]