1. Design of a Wideband High-Voltage High-Efficiency BiCMOS Envelope Amplifier for Micro-Base-Station RF Power Amplifiers.
- Author
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Kwak, Myoungbo, Kimball, Donald F., Presti, Calogero D., Scuderi, Antonino, Santagati, Carmelo, Yan, Jonmei J., Asbeck, Peter M., and Larson, Lawrence E.
- Subjects
HIGH voltages ,BROADBAND communication systems ,COMPLEMENTARY metal oxide semiconductors ,ELECTRONIC amplifiers ,RADIO frequency ,ELECTRIC distortion ,PERFORMANCE evaluation - Abstract
A high-performance bipolar-CMOS-DMOS (BCD) monolithic envelope amplifier for micro-base-station power amplifiers (PAs) is presented. Measurement of the BCD high-voltage (V DD=15\ {\V}) envelope amplifier shows an efficiency of 72% using 7.7-dB peak-to-average ratio WCDMA input signals at an average envelope amplifier output power above 3 W. A WCDMA envelope-tracking RF PA at 2.14 GHz, including a GaN field-effect transistor RF stage, has an overall drain efficiency above 51%, with a normalized power root-mean-square error below 1.2% and an adjacent channel leakage ratio of -49 dBc at 5-MHz offset using memory-effect mitigation digital pre-distortion, at an average output power above 2 W and a gain of 10 dB. [ABSTRACT FROM PUBLISHER]
- Published
- 2012
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