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The durability degradation during stack‐operating conditions seriously deteriorates the lifetime and performance of the fuel cell. To alleviate the rapid potential rise and performance degradation, an anode design is proposed to match the working temperature of high‐temperature proton exchange membrane fuel cells (HT‐PEMFCs) with the release temperature of hydrogen from palladium. The result is significantly enhanced hydrogen oxidation reaction (HOR) activity of Pd and superior performance of the Pd anode. Furthermore, Pd as hydrogen buffer and oxygen absorbent layer in the anode can provide additional in situ hydrogen and absorb infiltrated oxygen during local fuel starvation to maintain HOR and suppress reverse‐current degradation. Compared with the traditional Pt/C anode, the Pd/C also greatly improved HT‐PEMFCs durability during start‐up/shut‐down and current mutation. The storage/release of hydrogen provides innovative guidance for improving the durability of PEMFCs. [ABSTRACT FROM AUTHOR]

With the Tb modified and adding SrTiO 3 (STO) buffer layer, the BCZT film show the excellent ferroelectric fatigue resistance, which benefits from the reduced pinning influence with lower defect concentration based on a series of experiments and theoretical simulation. • A strategy to systematically improve ferroelectric and fatigue performances of BCZT film by Tb modified and STO layer inserted using PLD method is proposed. • After modification, pinning influence can be depressed by reducing concentration of oxygen vacancy and defect dipole in films, 94.2% of polarization recovery is obtained even after 109 switching cycles. • The P r , d 33 * of modified film increase from 3.6 to 9.0 μC/cm2, 52 to 75 pm/V and loss(tanθ) decrease from 0.028 to 0.017(104 Hz) compare with BCZT grown on Pt film. The ferroelectric properties and fatigue resistance of 47(Ba 0.7 Ca 0.3)TiO 3 –53Ba(Zr 0.2 Ti 0.8)O 3 (BCZT) film can be enhanced by Tb modified and adding SrTiO 3 (STO) buffer layer using pulsed laser deposition(PLD) method. The 0.4 mol% Tb doped BCZT/STO(0.4Tb-BCZT/STO) film possesses optimal comprehensive electrical properties. Comparing with traditional BCZT film gown on Pt, the residual polarization(P r), piezoelectric coefficient(d 33 *), permittivity(ε r) of 0.4Tb-BCZT/STO film increase from 3.6 to 9.0 μC/cm2, 52 to 75 pm/V, 880 to 1210 and loss(tanθ) decrease from 0.028 to 0.017(104 Hz), respectively. During a high electric field, the degradation of P r is only 5.8% and the increase of E c is about 6.1% in 0.4Tb-BCZT/STO film after 109 switching cycles, which show the excellent fatigue resistance. The improved polarization and fatigue performances of film benefits from the reduced pinning influence with lower defect concentration based on a series of experiments and theoretical simulation. This work demonstrates the potential candidates of lead-free nonvolatile memory micro-devices applied in microelectronic industry. [ABSTRACT FROM AUTHOR]