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Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with SixNy nanostrips on top of nanostructures can yield, via metal-organic chemical-vapor deposition, GaN(10 $$\bar {1}$$ 2) layers. An additional SiC buffer layer makes it possible to obtain GaN(10 $$\bar {1}$$ 1) layers with a full-width at half-maximum of the diffraction-curve of ωθ ≈ 35′ arcmin. It is found that the luminescence properties of the semipolar layers are mostly due to basal plane stacking faults BSFS-I1, in contrast to polar layers in which these properties are mostly due to the recombination of excitons.

To improve the performance characteristics of power and high-frequency electronics, wide bandgap semiconductors are now widely used. This paper presents consideration of features arising during exploration of electronic characteristics of wide bandgap materials. We use the admittance spectroscopy method for analyzing free carrier concentration and boron-impurity activation energy in semiconductor diamond. The special aspect that should be taken into account while studying wide bandgap materials is incomplete ionization of impurity. In this work we adjust the experimental conditions, basing on the previous experience, in particular reduce signal/noise ratio and reckon with heat capacity of the samples and substrate. As a result we obtained high quality conductance spectra and activation energy of boron impurity in low-doped diamond.