1. Morphology and interface characteristics of ZnO films deposited at room temperature and 750 °C
- Author
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C. W. Sun, Q.Y. Zhang, Z.X. Jin, Yanlin Wang, Zhenmin Liu, and Bo Wu
- Subjects
Materials science ,business.industry ,Analytical chemistry ,Surfaces and Interfaces ,General Chemistry ,Substrate (electronics) ,Sputter deposition ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Optics ,Sputtering ,Transmission electron microscopy ,Physical vapor deposition ,Cavity magnetron ,Materials Chemistry ,Thin film ,business ,Layer (electronics) - Abstract
Highly c-axis oriented ZnO films have been deposited onto Si (100) substrates at room temperature (RT) and 750 degrees C using radio-frequency reactive magnetron sputtering. The films have been characterized with X-ray diffraction, atomic force microscopy, and transmission electron microscopy (TEM). It is found that the film deposited at RT has grains with a regular shape while the grains show an irregular shape at 750 degrees C. Both of the films deposited at RT and 750 degrees C have a crystallographic orientation relationship with the Si substrate, [110](Si)//[100](ZnO) and (001)(Si)// (001)(ZnO) with a deviation angle below 3 degrees. Cross-sectional TEM images reveal that both of the ZnO films deposited at RT and 750 degrees C are composed of two layers. The first layer is a ZnO transition layer on the Si substrate and the second is a high c-axis oriented layer above the transition layer. The effects of substrate temperature on the growth behavior of ZnO films are discussed. (C) 2006 Elsevier B.V. All rights reserved.
- Published
- 2007
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