1. Ionizing radiation hardening of a CCD technology
- Author
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Simone, A., Debusschere, I., Alaerts, A., and Claeys, C.
- Subjects
Charge coupled devices -- Testing ,Irradiation -- Testing ,Sensors -- Testing ,Business ,Electronics ,Electronics and electrical industries - Abstract
A three level poly-silicon, buried channel Charge Coupled Device (CCD) technology has been tested for Co60 ionizing radiation damage up to a total dose of 90 krad(Si). For this purpose CCD image sensors have been irradiated together with their associated test structures. These include different types of MOSFET's, natural transistors, buried channel transistors, field transistors, and diodes. The devices have been fully characterized during irradiation and afterwards, as a function of time. The standard technology has been assessed, leading to the implementation of process and design modifications. The modified technology has been further tested according to the same procedure and significant improvement in the sensors' behaviour under irradiation and during annealing has been observed. The radiation hardness of the CCD's has been correlated with the results of the test structures, allowing a better understanding of the degradation phenomena and of the counter-measures needed for a radiation hardened technology.
- Published
- 1992