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Transparan İletken Oksit (TCO) ince filmler günümüzde güneş pilleri, LED’ler, lazerler gibi optoelektronik cihazlarda sıklıkla kullanılmaktadır. Bu kontakların kullanımı cihazların verimliliğini doğrudam etkilemektedir. Bu çalışmanın amacı heteroeklemli güneş hücrelerinin (HJSCs) (n+) a-Si:H yüzünde ve yüksek elektron hareketliliği olan tranzistörlerde (HEMT) kullanmak üzere atomik katman kaplama (ALD) tekniği kullanarak alüminyum katkılı çinko oksit (AZO) üretmek ve optimize etmektir. Bu çalışmada büyütme sıcaklığı ve alüminyum katkılama oranının ALD’de büyütülmüş AZO’nun yapısal, elektriksel ve optik özelliklerine etkisi çalışılmıştır.Sonuçlar göstermiştir ki filmler görünür bölgede %80-90 arasında ışık geçirgenliğine, düşük elektriksel rezistansa (2.04x10-3 ohm.cm) ve 5.25 cm2/V.s değerinde mobiliteye sahiptir., Transparent Conductive Oxide (TCO) films are widely used in optoelectronic devices, such as solar cells, LEDs, and Lasers. Utilization of these contacts directly affects the device efficiencies. Purpose of this study is to produce and optimize properties of Aluminum doped Zinc Oxide (AZO) using a vapor phase technique, Atomic Layer Deposition (ALD) for (n+) a-Si:H surface of silicon Heterojunction Solar Cells (HJSCs) and High Electron Mobility Transistor (HEMT) applications. This study is focused on the effect of the deposition temperature and aluminum atomic concentration on structural, electrical and optical properties of ALD grown AZO ohmic contact films. The results show that as-deposited films have 80-90% transmittance in the visible spectra, low resistance (2.04x10-3 ohm.cm) and mobility value of 5.25 cm2/V.s.

This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)–based cascaded multistage power amplifier (MPA) in class‐AB for L‐band radar applications. The purpose of this endeavour is to develop an MPA using GaN HEMT devices to achieve optimised parameters such as high gain, high power, better efficiency, and linearity in a compact size. In an MPA design with multiple stages, oscillations are common owing to unwanted high gain at the lower frequency range. To overcome this issue, we introduced interstage harmonic termination networks as a novel approach to suppress high gain at low frequencies, which are prone to oscillations. The proposed cascaded MPA provides the maximum radio‐frequency output power of 89 W and a power gain of 52 dB with an associated power‐added efficiency of 51%. Second and third harmonic levels are −32.5 and −37 dBc, respectively. Two‐tone measurements are performed with a frequency separation of 10 MHz, and an intermodulation level of less than −33 dBc is achieved.

In modern thermal infrared applications, multi-spectral camouflage scenarios should be developed to mitigate the thermal signature of an object. In general, camouflage needs to be satisfied in two main optical ranges: visible, and infrared (IR). In the IR range, two main camera modes are deployed to detect the IR signature of an object: $i) $ short-wave IR (SWIR) cameras that detect the solar photons reflected off a surface, $ii) $ mid-wave IR (MWIR) and long-wave IR (LWIR) cameras that directly collect the blackbody photons emitted from a hot object. Therefore, in an ideal scheme to acquire a multi-spectral camouflage function with self-cooling capability, the object should have: $i) $ perfect absorption in the SWIR range, $ii) $ perfect reflection in the MWIR and LWIR ranges, $iii) $ perfect absorption and one-way transmission in non-transmissive IR (NTIR) window (to radiatively cool itself), and $iv) $ visible transparency (to keep background visual appearance intact and to minimize the heat build-up due to solar absorption). In this paper, an all-dielectric nanoantenna emitter design is developed to comply with all the above-mentioned requirements. The approach relies on the indium tin oxide (ITO) grating structures coated on a flexible and transparent substrate (polystyrene). The spectral behaviors of the proposed structure are obtained using both analytical and numerical approaches. The design has an absorption peak with 0.8 amplitude in the SWIR mode (for the backward and forward illuminations), while it shows average reflections $\simeq 0.7 $ in the MWIR and LWIR ranges for the forward illumination. The peak values of transmission and absorption within the NTIR window for the forward illumination are around 0.6 and 0.9, respectively. Meanwhile, the use of lossless materials within the visible range provides visible light transmission and minimizes the heat build-up due to solar absorption. In addition, the radiated power calculation model is utilized to demonstrate the low power detection on the IR cameras.

Deflection, a basic functionality of wavefront manipulation is usually associated with the phase-gradient metasurfaces and the classical blazed gratings. We numerically and experimentally demonstrate an unusually wideband and simultaneously wide-angle deflection achieved at near-infrared in reflection mode for a periodic (nongradient), ultrathin meta-array comprising only one silicon nanorod (Mie resonator) per period. It occurs in the range where only the first negative diffraction order and zero order may propagate. Deflection serves as the enabler for multifunctional operation. Being designed with the main goal to obtain ultra-wideband and wide-angle deflection, the proposed meta-array is also capable in spatial filtering and wide-angle splitting. Spatial filtering of various types can be obtained in one structure by exploiting either deflection in nonzero diffraction orders, or the specular-reflection (zero-order) regime. Thus, the role of different diffraction orders is clarified. Moreover, on–off switching of deflection and related functionalities is possible by changing polarization state of the incident wave. The suggested device is simple to fabricate and only requires cost-effective materials, so it is particularly appropriate for the large-area fabrication using nanoprint lithography. Ultra-wideband wide-angle and other deflection scenarios, along with the other functionalities, are promising for applications in optical communications, laser optics, sensing, detection, and imaging.

In this work, we present an investigation of the optical properties and band structures for the photonic crystal structures (PCs) based on Sn2P2X6: X = S, Se) with Fibonacci superlattices. The optical properties of PCs can be tuned by varying structure parameters such as the lengths of poled domains, filling factor, and dispersion relation. In our simulation, we employed the finite-difference time domain technique and the plane wave expansion method, which implies the solution of Maxwell equations with centered finite-difference expressions for the space and time derivatives.

We report the high performance of Mid-wave Infrared Region (MWIR) InAs/GaSb Type-II Superlattice (T2SL) sensors with $640\times512$ format and 15- $\mu \text{m}$ pixel pitch at both Focal Plane Array (FPA) and pixel level. The p-intrinsic-Barrier-n epilayer structure is adopted for this study, which is grown on 620 ± $30~ \mu \text{m}$ thick GaSb substrate and highly-doped GaSb cap layer at the top structure. The mesa type pixels with sizes of $220\,\,\mu \text{m}\,\,\times 220\,\,\mu \text{m}$ have dark currents $7.8\times10$ −12 A at 77 K both of which are equivalent to state-of-the-art values for Type-II Superlattice sensors. The various passivation techniques to lower the dark current are applied and the results are given in terms of dark current. Electro-optical measurements yielded comparable results to literature. After gathering data and optimizing the fabrication conditions, the FPA of 15- $\mu \text{m}$ pitch having $4.92~ \mu \text{m}$ cut-off wavelength ( $\lambda _{\mathrm {c}}$ ) shows 1.6 A/W peak responsivity, Noise Equivalent Temperature Difference (NETD) of 22.6 mK with optics of f/2.3, quantum efficiency larger than 65% and 99.75% operability. The acquired images by using aforementioned FPA device is presented in this paper. With the reduction of dark current, an encouraging imaging performance is obtained which shows the potential of the Type-II Superlattice detectors in 3 rd generation infrared sensors.

In this work, an InGaN/GaN multiple quantum well based Top-Hat Hot-Electron Light Emission and Lasing in a Semiconductor Heterostructure (Top-Hat HELLISH) is investigated. A heterojunction structure is designed based on an active InGaN quantum well placed in the n-type GaN region sandwiched by the n-and p-type GaN layers. The four quantum well structure of an InGaN/GaN heterojunction where the Indium ratio is 0.16 has been grown via Metal-Organic Chemical Vapor Deposition. In order to create an anisotropic potential distribution of the heterojunction, it is aimed to fabricate TH-HELLISH-GaN device in Top-Hat HELLISH (THH) geometry for four contacts with separate n-and p-channels. High-speed I-V measurements of the device reveal an Ohmic characteristic at both polarities of the applied voltage. Integrated EL measurements reveal the threshold of the applied electric field at around 0.25 kV/cm. The emission wavelength of the device is around 440 +/- 1 nm at room temperature. (c) 2021 Elsevier B.V. All rights reserved.

The concept of multifunctional reflection-mode gratings based on rod-type photonic crystals with C2 symmetry is introduced and examined. The specific modal properties lead to the vanishing dependence of the first-negative-order maximum on the angle of incidence within a wide range, and the nearly sinusoidal redistribution of the incident-wave energy between zero order (specular reflection) and first negative diffraction order (deflection) at frequency variation that are the key features enabling various functionalities in one structure and functionality merging. The elementary functionalities offered by the studied structures, of which multifunctional scenarios can be designed, include but are not restricted to multiband spatial filtering, multiband splitting, and demultiplexing. The proposed structures are shown to be capable in multifunctional operation in case of an obliquely incident polychromatic wave. The generalized demultiplexing is demonstrated for the case when several polychromatic wavesare incident at different angles. The same deflection properties yield multiband splitting, and merging demultiplexing and splitting functionalties in one functionality, which may contribute to various multifunctional scenarios. The proposed gratings arealso studied in transmissive configuration.

We propose a polarization-insensitive metamaterial-based absorber consistent with the atmospheric absorption windows. The proposed design realizes triple narrowband perfect absorptions, whose absorption peaks perfectly match the atmospheric absorption windows while maintaining low emissivity within the atmospheric windows of $\boldsymbol{3-5\mu \mathrm{m}}$ and $\boldsymbol{8-12\mu \mathrm{m}}$ .

In this Letter, a dynamically tunable metasurface, which is based on antimony trisulfide, is introduced. In this structure, first a metal-insulator-metal (MIM) nanocavity is optimized in a way that, upon phase change, the visible response switches from a transmissive colored window into a reflective mirror. Later, an indium tin oxide nanoantenna is integrated on the MIM cavity to provide antireflection in the short-wave infrared (SWIR) range for SWIR mode thermal camouflage. The MIM host acts as a thermally tunable substrate to tune the SWIR response of the design.

We propose a dual-band metamaterial perfect absorber to achieve a narrowband absorption response in the visible range and a broadband absorptive characteristic in the near-infrared region. Moreover, by increasing the in-plane symmetry of the metamaterial, the polarization insensitive and angle insensitive absorptive features are verified.

A thermally tunable nanoantenna emitter based on a hybrid design made of a metamaterial absorber and a phase change material is developed for thermal camouflage applications. The proposed design perfectly mimics the atmospheric windows to obtain invisibility within the operating range of thermal cameras.

Obtaining functional devices with tunable features is beneficial to advance terahertz (THz) science and technology. Here, we propose multifunctional gradient metasurfaces that are composed of a periodic array of binary Si microcylinders integrated with V O 2 and graphene. The metasurfaces act as transmittive (reflective) beamsplitters for the dielectric (metallic) phase of V O 2 with a switchable characteristic. Moreover, by integrating the metasurfaces with graphene and modifying its chemical potential, one can tune the intensity of the split beam as well as obtain nearly perfect resonant absorptions. Consequently, the proposed metasurfaces can find potential applications in THz interferometers, multiplexers, and light absorbers.

Light-Matter Interactions at subwavelength-designed nanostructures have been the subject of intensive study in recent years. The realization of an ideal "blackbody" absorber is an emerging topic in nanophotonics and nanoplasmonics. An ideal black absorber is an object that harvests incoming light with near-unity efficiency. Based on their absorption spectral coverage, they are classified as narrow-band or broadband absorbers. This requirement can be achieved in bulky designs that have a thickness much larger than its light penetration depth as well as antireflective surface texturing.

In this paper, we scrutinize unprecedented potential of transition metal carbides (TMCs) and nitrides (TMNs) for realization of light perfect absorption in an ultra-broad frequency range encompassing all of the visible (Vis) and near infrared (NIR) regions. For this purpose, two different configurations which are planar and trapezoidal array are employed. To gain insight on the condition for light perfect absorption, a systematic modeling approach based on transfer matrix method (TMM) is firstly utilized. Our modeling findings prove that the permittivity data of these TMCs and TMNs are closely matched with the ideal data. Thus, they can have stronger and broader absorption behavior compared to metals. Besides, these ceramic materials are preferred to metals due to the fact that they have better thermal properties and higher durability against erosion and oxidation than metals. This could provide the opportunity for design of highly efficient light harvesting systems with long-term stability. Numerical simulations are conducted to optimize the device optical performance for each of the proposed carbides and nitrides. Our findings reveal that these ceramic coatings have the broadest absorption response compared to all lossy and plasmonic metals. In planar configuration, titanium carbide (TiC) has the largest absorption bandwidth (BW) where an absorption above 0.9 is retained over a broad wavelength range of 405–1495 nm. In trapezoid architecture, vanadium nitride (VN) shows the widest BW covering a range from 300 to 2500 nm. The results of this study can serve as a beacon for the design of future high-performance energy conversion devices including solar vapor generation and thermal photovoltaics where both optical and thermal requirements can be satisfied. TÜBİTAK

Thinning the active layer’s thickness of the semiconductor down to a level comparable with the carriers’ diffusion length while keeping its absorption high is an ultimate goal to boost the performance of optoelectronic devices. Strong interference in multilayer structures is one of the promising and practical solutions owing to their simple and large-scale compatible fabrication route. These nanocavity designs not only provide near unity absorption, but they can also be designed in a way that a spectrally selective absorption response can be achieved. In this letter, we will demonstrate the functionality of a metal–insulator–semiconductor (MIS) cavity to obtain spectrally selective ultrathin photodetectors. To prove our theoretical and numerical findings, a 4-nm-thick amorphous silicon (a-Si)-based MIS cavity is designed, fabricated, and characterized. The experimental results show that the optimized cavity design can act as an efficient visible blind ultraviolet (UV) photodetector. The proposed design shows the responsivity values of 120 and 2.5 mA/W in the UV ( $\lambda =\textsf {350}$ nm) and visible ( $\lambda =\textsf {500}$ nm) regions, respectively.

In this study optical properties of InGaN/GaN/Al2O3 multi-quantum well (MQW) structures are investigated in detail. Three samples containing InGaN/GaN/Al2O3 MQWs are grown by using metal organic chemical vapor deposition technique. Sapphire (6H-Al2O3) is used as the substrate. Forbidden energy band gaps (E-g) of these three samples are determined from photoluminescence and absorption spectra. Results gained from these two spectra are compared with each other. It is found that E-g values are between 2 and 3eV. For determining refraction index, absorption coefficients, extinction coefficients and thickness of the films a rare method called Swanepoel envelope method is used. It is seen that results gained from this method are consistent with those in literature.

In recent years, sub-wavelength metamaterials-based light perfect absorbers have been the subject of many studies. The most frequently utilized absorber configuration is based on nanostructured plasmonic metals. However, two main drawbacks were raised for this design architecture. One is the fabrication complexity and large scale incompatibility of these nano units. The other one is the inherent limitation of these common metals which mostly operate in the visible frequency range. Recently, strong interference effects in lithography-free planar multilayer designs have been proposed as a solution for tackling these drawbacks. In this paper, we reveal the extraordinary potential of bismuth (Bi) metal in achieving light perfect absorption in a planar design through a broad wavelength regime. For this aim, we adopted a modeling approach based on the transfer matrix method (TMM) to find the ideal conditions for light perfect absorption. According to the findings of our modeling and numerical simulations, it was demonstrated that the use of Bi in the metal-insulator-metal-insulator (MIMI) configuration can simultaneously provide two distinct functionalities; a narrow near unity reflection response and an ultra-broadband near perfect absorption. The reflection behavior can be employed to realize additive color filters in the visible range, while the ultra-broadband absorption response of the design can fully harvest solar irradiation in the visible and near infrared (NIR) ranges. The findings of this paper demonstrate the extraordinary potential of Bi metal for the design of deep sub-wavelength optical devices.

In this paper, a route to ultra-broadband absorption is suggested and demonstrated by a feasible design. The high absorption regime (absorption above 90%) for the suggested structure ranges from visible to mid-infrared (MIR), i.e., for the wavelength varying from 478 to 3278 nm that yields an ultra-wide band with the width of 2800 nm. The structure consists of a top-layer-patterned metal-insulator-metal (MIM) configuration, into the insulator layer of which, an ultra-thin 5 nm layer of manganese (Mn) is embedded. The MIM configuration represents a Ti-Al2O3-Ti tri-layer. It is shown that, without the ultra-thin layer of Mn, the absorption bandwidth is reduced to 274 nm. Therefore, adding only a 5 nm layer of Mn leads to a more than tenfold increase in the width of the absorption band. It is explained in detail that the physical mechanism yielding this ultra-broadband result is a combination of plasmonic and non-plasmonic resonance modes, along with the appropriate optical properties of Mn. This structure has the relative bandwidth (RBW) of 149%, while only one step of lithography is required for its fabrication, so it is relatively simple. This makes it rather promising for practical applications.

Asymmetric beaming in a piecewise-linear propagation channel is demonstrated for a single photonic-crystal prism at Gaussian-beam illumination. The used hybrid refraction–diffraction mechanism exploits oblique incidence, the first-negative-order deflection at the longer interface, and asymmetry in coupling at the exit interfaces and does not need blocking of transmission by dispersion in the backward illumination case. The Floquet–Bloch mode with left-handed behavior and nearly circular equifrequency dispersion contours is utilized. The outgoing waves may have significantly different spatial distributions for the forward and backward illumination cases, yielding asymmetry in the beaming regime.

In this Letter, we demonstrate strong light emission from defective hexagonal boron nitride (hBN) defect centers upon their coupling with disorder near-touching plasmonic units. Based on numerical simulations and characterization results, the plasmonic design at thin layer thicknesses of 20 nm can provide above 2 orders of magnitude enhancement in photoluminescence (PL) spectra. Moreover, this plasmonic platform shortens the luminescence lifetime of the emitters. The proposed design can be easily extended to other plasmonic-emitter combinations where strong light-matter interaction can be achieved using large-scale compatible routes. (C) 2021 Optical Society of America

Low-resistance ohmic contacts in AlGaN/GaN high-electron-mobility transistor (HEMT) devices require high-temperature (HT) annealing (> 800 °C) which can deteriorate material quality, surface morphology, and edge acuity of the metal stacks. This article demonstrates the high-frequency and high-power performance of the AlGaN/GaN HEMT devices with low-temperature metal-organic chemical vapor deposition (MOCVD) regrown degenerately doped InGaN ohmic contacts compared with GaN-based regrown contacts. Ohmic contacts fabricated by regrowth methods could be a valuable alternative for both metal-based alloyed ohmic contacts and implantation-based ohmic contacts. Using a T-gate and MOCVD regrown InGaN ohmic contacts, the AlGaN/GaN HEMT with an ${L}_{g}$ of 150 nm and S-D spacing of $2.5~\mu \text{m}$ demonstrated a maximum drain current of 0.94 A/mm and a peak transconductance of 337 mS/mm. The same device exhibited a forward current gain frequency ${f}_{t}$ of 36.8 GHz and a maximum frequency of oscillation ${f}_{\text {max}}$ of 75.0 GHz. A power density of 3.07 W/mm with a 60% drain efficiency was measured at 35 GHz with a ${V}_{\text {ds}}$ of 20 V and a quiescent current of 100 mA/mm.

Summary The realization of high-performance, precious-metal-free, stable, and robust photoanodes for water oxidation is one of the bottlenecks for dye-sensitized water splitting. Herein, we integrate an organic photosensitizer, which absorbs visible light above 500 nm, with a Prussian blue (PB) network to sensitize a visible-light-absorbing semiconductor, WO3. Through comprehensive steady-state and ultrafast transient absorption studies, we show that the coupling of a photosensitizer to a catalyst through a short cyanide bridging group in a PB structure generates appropriate energy levels for an efficient charge transfer from the photosensitizer to the visible-light-absorbing semiconductor. The photoanode retains its structural integrity and high photoelectrochemical activity for at least 2 h of solar irradiation under mildly acidic conditions (pH 3), which reaches around 1.30 mA/cm2 at 1.23 VRHE. This work provides a simple recipe with a toolbox that can be extended to a variety of organic photosensitizers and semiconductors.

This paper describes an air cavity quad-flat no-leads (QFN) over-molded plastic packaged cascode broadband GaN LNA Monolithic Microwave Integrated Circuit (MMIC) with resistive feedback fabricated with 0.25 μm GaN HEMT technology. The single stage QFN packaged GaN LNA MMIC achieves a bandwidth of 0.03–2.6 GHz with a typical gain of 11.5 dB and less than 1.5 dB noise figure. The low noise amplifier (LNA) design is based on a model of a concept transistor, the cascode transistor used in the design, that has not been fabricated previously. The concept transistor is fabricated for the first time along with the GaN LNA MMIC. The fabricated GaN LNA MMIC is housed in a 12-lead 3 × 3 mm2 air cavity QFN over-molded plastic package and mounted on an application board. The measurements taken with the application board represent a good convergence with the design that is based on a concept transistor model. The measurement results and 50 Ω internal matching on both ports without the need for additional matching components make this LNA attractive for many applications.

Date of Conference: 19–23 July 2021 Conference name: OSA Optical Sensors and Sensing Congress 2021 (AIS, FTS, HISE, SENSORS, ES) This work analyzes the spatial resolution of the dual-pulse -OTDR systems by changing the dual-pulse parameters and demonstrates that the spatial resolution corresponds to half of the fiber region occupied by the dual-pulse train.

Metamaterial perfect absorbers (MPAs) with dynamic thermal tuning features are able to control the absorption performance of the resonances, providing diverse applications spanning from optical switches and filters to modulators. In this paper, we propose an MPA with diverse functionalities enabled by vanadium dioxide (VO2) embedded in a metal-dielectric plasmonic structure. For the initial design purpose, a silicon (Si) nanograting on a silver (Ag) mirror is proposed to have multiple resonant responses in the near infrared (NIR) region. Then, the insertion of a thin VO2 layer at the right position enables the design to act as an on/off switch and resonance tuner. In the insulator phase of VO2, in which the permittivity data of VO2 is similar to that of Si, a double strong resonant behavior is achieved within the NIR region. By increasing the temperature, the state of VO2 transforms from insulator to metallic so that the absorption bands turn into three distinct resonant peaks with close spectral positions. Upon this transformation, a new resonance emerges and the existing resonance features experience blue/red shifts in the spectral domain. The superposition of these peaks makes the overall absorption bandwidth broad. Although Si has a small thermo-optic coefficient, owing to strong light confinement in the ultrasmall gaps, a substantial tuning can be achieved within the Si nanogratings. Therefore, the proposed hybrid design can provide multi-resonance tunable features to cover a broad range and can be a promising strategy for the design of linearly thermal-tunable and broadband MPAs. Owing to the proposed double tuning feature, the resonance wavelengths exhibits great sensitivity to temperature, covering a broad wavelength range $$.$$ Overall, the proposed design strategy demonstrates diverse functionalities enabled by the integration of a thin VO2 layer with plasmonic absorbers.

Date of Conference: 19–23 July 2021 Conference name: OSA Optical Sensors and Sensing Congress 2021 (AIS, FTS, HISE, SENSORS, ES) We experimentally investigate the effect of the probe pulse shape on the performance of φ-OTDR based distributed vibration sensors by comparing the SNR values for rectangular, Gaussian and triangular pulses.

In this study, HfAlO3 ternary alloy thin film was grown on n-type silicon using the atomic layer deposition method. The current transport mechanisms in the (Au/Ni/HfAlO3/n-Si junction were examined over a wide temperature range (80-360 K). The values obtained for the ideality factor (n) varied from 22.93 to 3.94 and the barrier height at zero bias (Phi(B0)) ranged from 0.221 eV to 0.821 eV as the temperature changed from 80 to 360 K. The Phi(B0)-n and Phi B-30-q/2 kT characteristics were investigated to explain the higher n values and non-ideal behavior of the Richardson curves. Two linear regions were found at low temperatures (LTs; 80-180 K) and high temperatures (HTs; 200-360 K), which indicated the presence of a Gaussian distribution barrier height and the average barrier heights ((Phi) over bar (B0)) were identified. The values obtained for (Phi) over bar (B0 )were 0.734 eV for LTs and 1.125 eV for HTs, and the values of sigma(s) were 0.085 V for LTs and 0.140 V for HTs. The values obtained for N-ss decreased as the temperature increased and they varied between similar to 10(12) and 10(13) eV(-1) cm(-2). Finally, the dielectric behavior and conductivity of the (Au/Ni)/HfAlO3/n-Si junction were investigated at frequencies between 5 kHz and 2 MHz at room temperature. The values determined for epsilon' and epsilon '' at -1 V and 5 kHz were 2.1 and 3.53, respectively.

Conference Name: Signal Processing in Photonic Communications, SPPCom 2021 - Part of OSA Advanced Photonics Congress 2021 Date of Conference: 26 July 2021- 29 July 2021 We experimentally demonstrate a simple parity-time-symmetric optoelectronic oscillator based on all-fiber coupling with single-mode microwave oscillation at 9.5 GHz possessing a phase noise value of −116.2 dBc/Hz at 10 kHz offset.

In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated devices are investigated experimentally in detail for the first time. Transistors with different gate dimensions and conventional planar devices are fabricated using two-step electron beam lithography (EBL). Current–voltage, source-access resistance, small-signal, and two-tone measurements are performed to evaluate the linearity of devices. Contrary to conventional planar HEMTs, the intrinsic transconductance of laterally gated devices monotonically increases with increasing gate voltage, showing a similar behavior as junction field-effect transistors (FETs). The source-access resistance shows a polynomial increase with the drain current, which can be reduced by decreasing the filling ratio of the buried gates. Through the optimization of these two competing factors, i.e., intrinsic transconductance and the source-access resistance, flat transconductance with high linearity is achieved experimentally. The laterally gated structure shows flat transconductance and small-signal power gain over a larger span of gate voltage that is 2.5 times higher than a planar device. Moreover, 6.9-dB improvement in output intercept point (OIP3)/ ${P}_{\text {DC}}$ is achieved. This approach can be used to improve the linearity of AlGaN/GaN HEMTs at the device level.

Graphene-based metasurface nearly perfect absorbers (MPAs) can be used as an efficient tool for the active control and manipulation of waves in the terahertz (THz) gap. Here, we propose a novel, to the best of our knowledge, graphene-based MPA that is designed based on a simple configuration and is capable of absorbing THz radiation within a broad bandwidth of almost 3 THz with polarization-insensitive and omnidirectional characteristics. The MPA comprises a periodic array of graphene patches with two different dimensions that are separated from a gold bottom reflector with an S i O 2 spacer layer. The broadband spectral response of the MPA, which is also verified by analytical calculations, is due to the support of propagating surface plasmon excitations and can be either actively tuned via changes in the chemical potential of graphene or passively adjusted by the modification of the geometrical parameters of the patches and thickness of the spacer layer. As a complement to the previous studies in the literature, due to the simplicity of its design and broad spectral response, it is believed that the suggested graphene-based MPA will find potential applications in THz spectroscopy and communications.

A recently emerging visible light-absorbing semiconductor, brown TiO2 (b-TiO2), was coupled with a CoFe Prussian blue (PB) analogue to prepare an entirely earth-abundant semiconductor/water oxidation catalyst hybrid assembly. PB/b-TiO2 exhibits a sevenfold higher photocatalytic water oxidation activity compared to b-TiO2. An elegant band alignment unified with the optical absorption of b-TiO2 and excellent electronic dynamics of PB yield a high-performance photocatalytic system.

In this Letter, we numerically propose a temperature-tunable, ultra-narrowband one-way perfect near-infrared radiation absorber with high transmission in the longer wavelength neighboring spectral range. We obtained this functionality by using a guided-mode resonance-based grating-waveguide metamirror that is comprised of silicon, a spacer dielectric, an absorbing semiconductor, and germanium. Within the ultra-narrow bandwidth of the guided-mode resonance excited at 1.16 µm with a full width at half-maximum of 3.3 nm, we confirmed perfect absorption when light is incident from one of the two opposite directions. Excitation from the opposite direction resulted in perfect reflection. The thickness of the entire structure is limited to about one third the operating wavelength. Furthermore, due to the temperature tunability of silicon and germanium the thermo-optical sensitivity was found to be approximately 0.068 nm/K. In addition to this spectral tunability, our proposed device supports transparency windows with 80% transmission in the higher wavelength ranges. Our device is highly promising in the applications of thermo-tunable modulators and obtaining single frequency near-infrared signals from broadband sources.

In this study, AlInN/AlN high electron mobility transistor (HEMT) structure is grown on c-oriented sapphire substrate using metal organic chemical vapor deposition method. Optical properties of the structure are investigated by photoluminescence (PL) and ultraviolet (UV-Vis.) spectras. According to PL results, direct bandgap of AlN is determined around 2.80 eV. In UV-Vis. spectra it is seen that conduction of AlInN layer starts at 360 nm. Swanepoel envelope method is applied on transmission spectra and some optical properties such as refractive index (n), film thickness (t), absorption coefficient (alpha), and extinction coefficient (k) are determined. Forbidden energy bandgap is determined again from Tau method and it is compared with the value gained from PL spectra. This study is a rare one that presents optical properties of HEMTs using Swanepoel and Tau methods. In addition to this, it helps estimating how optical properties of HEMTs effect electrical properties.

In this Letter, we numerically propose the one-way perfect absorption of near-infrared radiation in a tunable spectral range with high transmission in the neighboring spectral ranges. This functionality is obtained by using a two-dimensional, guided-mode resonance-based grating-waveguide metasurface that acts as a frequency-selective reflector, a spacer dielectric, and an absorbing oxide layer. Within the bandwidth of the excited guided-mode resonance excited at 1.82 mu m (with a full-width at half-maximum of 19 nm), we confirmed perfect absorption when light was incident from one of the two opposite directions, whereas in the other direction, perfect reflection was observed. The forward-to-backward absorption ratio reached as high as 60, while the thickness of the entire structure was on the order of the operating wavelength. In addition to the spectral tunability of the excited resonances and their bandwidths, our proposed device supports transparency windows with 65% transmission in the adjacent frequency bands. Our 2D grating is also verified to enable near-absolute insensitivity to the polarization state of incident light. Geometrical parameter modification also gives our design great tunability, as we also designed a device with a 300 nm absorption/reflection linewidth. (C) 2020 Optical Society of America

Temporally periodic photonic crystals develop an ω-k dispersion relation with momentum band gaps. While conventional photonic crystals induce forbidden bands in the frequency spectrum of photons, photonic time crystals create forbidden regions in the momentum spectrum of photons. This effect allows for enhanced control over many optical processes that require both photonic energy and momentum conservations such as nonlinear harmonic generation. The simulation results show that more intensive scatter fields can obtained in photonic space time crystal. Also, we investigate topological phase transitions of photonic time crystals systems.

The efficient harvesting of electromagnetic (EM) waves by sub-wavelength nanostructures can result in perfect light absorption in the narrow or broad frequency range. In recent years, the concept of lithography-free planar light perfect absorbers has attracted much attention in different parts of the EM spectrum, owing to their ease of fabrication and high functionality. In this talk, we will review the material and architecture requirements for the realization of light perfect absorption using these multilayer metamaterial designs from ultraviolet (UV) to far-infrared (FIR) wavelength regimes. We will summarize our latest studies on the use of metamaterial designs for energy conversion, filtering, and sensing applications using lithography-free light perfect absorbers. We will also discuss the progress, challenges, and outlook of this field to outline its future direction.

Combining the effects of subwavelength resonators and very-high-permittivity substrates enables a high extent of miniaturization, even for very simple, split-loop resonators. Here, we demonstrate how requirements to the substrate's permittivity are connected with the desired extent of miniaturization and why materials with a relative permittivity of 30

A lithography‐free, double‐functional single bismuth (Bi) metal nanostructure is designed, fabricated, and characterized for ultrabroadband absorption in the visible (vis) and near‐infrared (NIR) ranges, and for a narrowband response with ultrahigh refractive index sensitivity in the mid‐infrared (MIR) range. To achieve a large‐scale fabrication of the design in a lithography‐free route, the oblique‐angle deposition approach is used to obtain densely packed and randomly spaced/oriented Bi nanostructures. It is shown that this fabrication technique can provide a bottom‐up approach to controlling the length and spacing of the design. The characterization findings reveal a broadband absorbance above 0.8 in vis and NIR, and a narrowband absorbance centered around 6.54 µm. Dense architecture and extraordinary permittivity of Bi provide strong field confinement in ultrasmall gaps between nanostructures, and this can be utilized for a sensing application. An ultrahigh sensitivity of 2151 nm refractive‐index unit (RIU–1) is acquired, which is, as far as it is known, the experimentally highest sensitivity attained so far. The simple and large‐scale compatible fabrication route of the design together with the extraordinary optical response of Bi coating makes this design promising for many optoelectronic and sensing applications. Scientific and Technological Research Council of Turkey DPT‐HAMIT. Grant Numbers: 113E331, 114E374, 115F560 Turkish Academy of Sciences Türkiye Bilimsel ve Teknolojik Araştirma Kurumu. Grant Number: 115F560

In this paper, we demonstrate a highly efficient light trapping design that is made of a metal-oxide-semiconductor-semiconductor (nanograting/nanopatch) (MOSSg/p) four-layer design to absorb light in a broad wavelength regime in dimensions smaller than the hole diffusion length of the active layer. For this aim, we first adopt a modeling approach based on the transfer matrix method (TMM) to find out the absorption bandwidth (BW) limits of a simple hematite (α-Fe2O3)-based metal-oxide-semiconductor (MOS) cavity design. Our modeling findings show that this design architecture can provide near-perfect absorption in shorter wavelengths. To extend the absorption toward longer wavelengths, a nanostructured semiconductor is placed on top of this MOS design. This nanostructure supports the Mie resonance and adds a new resonance in longer wavelengths without disrupting the lower wavelength absorption capability of MOS cavity. By this way, a polarization-insensitive absorption above 0.8 can be acquired up to λ=565 nm. Moreover, to have a better qualitative comparison, the water-splitting photocurrent of this design has been estimated. Our calculations show that a photocurrent as high as 10.6 mA cm−2 can be achieved with this design that is quite close to the theoretical limit of 12.5 mA cm−2 for hematite-based water-splitting photoanode. This paper proposes a design approach in which the superposition of cavity modes and Mie resonances can lead to a broadband, polarization-insensitive, and omnidirectional near-perfect light absorption in dimensions smaller than the carrier’s diffusion length. This can be considered as a winning strategy to design highly efficient and ultrathin optoelectronic designs in a variety of applications including photoelectrochemical water splitting and photovoltaics.

Date of Conference: 3 - 5 August 2020 Conference name: 14th Pacific Rim Conference on Lasers and Electro-Optics (CLEO PR 2020) A simple and effective method for increasing the SNR and range in φ-OTDR based direct-detection distributed acoustic sensors is proposed and experimentally verified. The proposed method results in ~11 dB SNR improvement at 66 km.

Mid-infrared (MIR) plasmon-phonon features of heterostructures composing of a plasmonic anisotropic two-dimensional material (A2DM) on a hexagonal boron nitride (hBN) film are analyzed. We derive the exact dispersion relations of plasmon-phonons supported by the heterostructures and demonstrate the possibility of topological transitions of these modes within the second Reststrahlen band of hBN. The topological transitions lead to enhanced local density of plasmon-phonon states, which intensifies the spontaneous emission rate, if the thickness of the hBN layer is appropriately chosen. We also investigate a lateral junction formed by A2DM/hBN and A2DM, demonstrating that one can realize asymmetric guiding, beaming, and unidirectionality of the hybrid guided modes. Our findings demonstrate potential capabilities of the A2DM/hBN heterostructures for active tunable light–matter interactions and asymmetric in-plane polariton nanophotonics in the MIR range.

A facial and large-scale compatible fabrication route is established, affording a high-performance heterogeneous plasmonic-based photoelectrode for water oxidation that incorporates a CoFe-Prussian blue analog (PBA) structure as the water oxidation catalytic center. For this purpose, an angled deposition of gold (Au) was used to selectively coat the tips of the bismuth vanadate (BiVO4 ) nanostructures, yielding Au-capped BiVO4 (Au-BiVO4 ). The formation of multiple size/dimension Au capping islands provides strong light-matter interactions at nanoscale dimensions. These plasmonic particles not only enhance light absorption in the bulk BiVO4 (through the excitation of Fabry-Perot (FP) modes) but also contribute to photocurrent generation through the injection of sub-band-gap hot electrons. To substantiate the activity of the photoanodes, the interfacial electron dynamics are significantly improved by using a PBA water oxidation catalyst (WOC) resulting in an Au-BiVO4 /PBA assembly. At 1.23 V (vs. RHE), the photocurrent value for a bare BiVO4 photoanode was obtained as 190 μA cm-2 , whereas it was boosted to 295 μA cm-2 and 1800 μA cm-2 for Au-BiVO4 and Au-BiVO4 /PBA, respectively. Our results suggest that this simple and facial synthetic approach paves the way for plasmonic-based solar water splitting, in which a variety of common metals and semiconductors can be employed in conjunction with catalyst designs., Scientific and Technological Research Council of Turkey (TÜBİTAK); DPT-HAMIT; Turkish Academy of Sciences; TÜBA-GEBİP for Young İnvestigator Award; BAGEP for Young Scientist Award

In this paper, a visible light driven plasmonic based photoelectrochemical water splitting (PEC-WS) cell is designed with an elegant two-step fabrication route. First, titanium dioxide (TiO2) nanowires (NWs) were synthesized using the hydrothermal method. Then, angled deposition was used to selectively coat the tips of the NWs yielding Au-capped TiO2 NWs with multiple sizes and shapes. The provided randomness leads to a multi-resonant system where the superposition of these resonance modes leads to an overall broadband absorption. The excited localized surface resonance (LSPR) modes contribute to the performance enhancement of the cell via near field effects and a hot electron injection mechanism. Moreover, these nanotips can trigger the formation of Fabry-Pérot (FP) cavity modes. The combination of the above-mentioned mechanisms leads to a high performance visible light driven plasmonic cell. At an applied potential of 1.23 V vs RHE, a photocurrent value as high as 82 μA/cm2 is acquired for the plasmonic based photoanode. The proposed design strategy is a large scale compatible route with no material restriction. Therefore, vast variety of semiconductor-metal pairs can be fabricated to obtain highly efficient water splitting cell for hydrogen generation. This work is supported by the Scientific and TechnologicalResearch Council of Turkey (TUBITAK), grant number215Z249. This work is supported by the project DPT-HAMIT aswell as TUBITAK under the project nos. 113E331, 114E374, and115F560

Conference name: 2020 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2020 - Proceedings Date of Conference: 3–5 August 2020 We theoretically model and experimentally demonstrate the photon statistics of Rayleigh backscattered signal in a ϕ-OTDR based distributed fiber optical sensor in the presence of amplified spontaneous emission noise caused by optical pre-amplifier.

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted tremendous attention over the past decades. Due to their unique features such as high mobility and direct bandgap, they are suitable candidate for the optoelectronic devices. However, due to their ultrathin thickness, their optical absorption is quite weak, and therefore, a trapping scheme for strong light- matter interaction is essential to overcome this deficiency. To accomplish strong light absorption, loss-less dielectric-based metasurfaces with ideally no parasitic absorption are excellent choices. Herein, we report an ultra-narrowband thermally tunable all-dielectric metasurface coupled absorber with TMD monolayer. In this proposed structure, high absorption with ultra-narrow full-width-at-half-maximum (FWHM) is achieved. Different design configurations are studied to find the most suitable structure. In the optimized design, an absorptance as high as 0.85 with a FWHM of 3.1 nm is achieved. This structure also shows thermal sensitivity of 0.0096 nm/°C, without the use of any phase change material component. This architecture can be used as a 2D and highly efficient tunable single-color photodetector. The proposed dielectric metasurface can be adopted for other types of 2D and ultrathin semiconductor-based optoelectronics.

The efficient harvesting of electromagnetic (EM) waves by subwavelength nanostructures can result in perfect light absorption in the narrow or broad frequency range. These metamaterial-based perfec...

Being one-atom thick and tunable simultaneously, graphene plays the revolutionizing role in many areas. The focus of this paper is to investigate the modal characteristics of surface waves in structures with graphene in the far-infrared (far-IR) region. We discuss the effects exerted by substrate permittivity on propagation and localization characteristics of surface-plasmon-polaritons (SPPs) in single-layer graphene and theoretically investigate characteristics of the hybridized surface-phonon-plasmon-polaritons (SPPPs) in graphene/LiF/glass heterostructures. First, it is shown how high permittivity of substrate may improve characteristics of graphene SPPs. Next, the possibility of optimization for surface-phonon-polaritons (SPhPs) in waveguides based on LiF, a polar dielectric with a wide polaritonic gap (Reststrahlen band) and a wide range of permittivity variation, is demonstrated. Combining graphene and LiF in one heterostructure allows to keep the advantages of both, yielding tunable hybridized SPPPs which can be either forwardly or backwardly propagating. Owing to high permittivity of LiF below the gap, an almost 3.2-fold enhancement in the figure of merit (FoM), ratio of normalized propagation length to localization length of the modes, can be obtained for SPPPs at 5-9 THz, as compared with SPPs of graphene on conventional glass substrate. The enhancement is efficiently tunable by varying the chemical potential of graphene. SPPPs with characteristics which strongly differ inside and around the polaritonic gap are found. ispartof: Scientific Reports vol:8 issue:1 ispartof: location:England status: published

In the present work, we have reported two high-electron-mobility transistor structures (HEMTs) with different thick AlN buffer deposited on sapphire substrates by metal-organic chemical vapor deposition (MOCVD). AlN buffer layer has a critical important for the device performance therefore its effect of hererostructures analyzed using mosaic model. AlGaN/AlN/GaN heterostructures were examined by X-ray diffraction (XRD) and Atomic-force microscope (AFM). In order to evaluate the mosaicity of GaN, AlGaN, AlN layers in the structures, mosaic model was also used. These layers of lateral and vertical crystal size, dislocations, tilt and stain are investigated with HR-XRD device by Vegard and William Hall (WH) semi-experimental methods. According to the XRD results; As the buffer layer thickness decreases, the FWHM values of symmetric (002) and asymmetric peaks (105) of epitaxial layers increase. The thicker buffer layer makes the structure more crystalized. According to the AFM results the lower thickness AlN buffer has more frequent pits and hillocks and has more rough. As a result, the 520 nm thick AlN buffer layer showed a better structural performance.

In an ideal platform for camouflage compatible cooling, the thermal emitter should be a spectrally selective antenna to radiate its heat buildup without being detected by thermal cameras. Moreover, to keep its visual appearance and to minimize solar induced heating, the structure should be visibly transparent. In this Letter, to achieve the visually invisible mid-infrared (MIR) camouflage-cooling feature, a metasurface design based on an indium-doped tin oxide (ITO)-hexagonal boron nitride (hBN) heterostructure is proposed. The proposed ITO-hBN nanoantenna shows spectrally selective broadband absorptions in near-infrared (NIR) and non-transmissive (MIR) windows, while it is dominantly non-emissive in other ranges. The camouflage ability of the structure in the targeted wavelengths is demonstrated using power calculations.