1. 3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation
- Author
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Hiroshi Ishimori, Shinsuke Harada, Yasunori Tanaka, Shinji Takasu, Junji Senzaki, Hajime Okumura, Takahito Kojima, Manabu Takei, Mitsuru Sometani, Keiko Ariyoshi, and Yusuke Kobayashi
- Subjects
010302 applied physics ,Materials science ,Trench mosfet ,business.industry ,Mechanical Engineering ,Electrical engineering ,Oxide ,02 engineering and technology ,Edge (geometry) ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,chemistry.chemical_compound ,Tilt (optics) ,Ion implantation ,chemistry ,Mechanics of Materials ,0103 physical sciences ,MOSFET ,Trench ,Breakdown voltage ,Optoelectronics ,General Materials Science ,0210 nano-technology ,business - Abstract
A 3.3 kV trench MOSFET with double-trench structure was demonstrated. The deep buried p-base regions were fabricated using tilt angle ion implantation into the sidewalls of the trench contacts. The distance between the trench gate and trench contact was determined through simulation, in order to optimize the trade-off between on-resistance (RonA) and the electrical field in the oxide (Eox). A tapered trench was located in the connective area between the edge termination and the active area, in order to maintain breakdown voltage. We achieved a RonA of 10.3 mWcm2 and a breakdown voltage of 3843 V and the maximum Eox at breakdown voltage was estimated to be 3.2 MV/cm.
- Published
- 2016