1. Versatile Post-Doping toward Two-Dimensional Semiconductors
- Author
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Takashi Taniguchi, Hiroshi Shimizu, Kenji Watanabe, Hidemi Shigekawa, Shoji Yoshida, Yasumitsu Miyata, Ryo Kitaura, Tomohiro Sato, Ruben Canton-Vitoria, Yanlin Gao, Takahiko Endo, Susumu Okada, Zheng Liu, Mina Maruyama, Toshifumi Irisawa, Yuya Murai, Hiroyuki Mogi, Takato Hotta, and Shaochun Zhang
- Subjects
Materials science ,Dopant ,business.industry ,Transistor ,Doping ,General Engineering ,General Physics and Astronomy ,Orders of magnitude (numbers) ,law.invention ,Chalcogen ,Semiconductor ,Transition metal ,Transmission electron microscopy ,law ,Optoelectronics ,General Materials Science ,business - Abstract
We have developed a simple and straightforward way to realize controlled postdoping toward 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic-energy dopant beams and a high-flux chalcogen beam simultaneously, leading to substitutional doping with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected toward TMDs are incorporated substitutionally into the hexagonal framework of TMDs. The electronic properties of doped TMDs (Nb-doped WSe2) have shown drastic change and p-type action with more than 2 orders of magnitude increase in current. Position-selective doping has also been demonstrated by the postdoping toward TMDs with a patterned mask on the surface. The postdoping method developed in this work can be a versatile tool for 2D-based next-generation electronics in the future.
- Published
- 2021
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