1. Miniaturization of an electron device using inverse problem methodology
- Author
-
Arkadan, A.A., Subramanian-Sivanesan, S., Hoole, S.R.H., and Samudra, G.
- Subjects
Electronic instruments -- Research ,Miniature electronic equipment -- Research ,Miniaturization (Electronics) -- Research ,Business ,Electronics ,Electronics and electrical industries - Abstract
The miniaturization of electron devices has its advantages in dense circuits and high frequency devices. As can be seen in the current literature, considerable effort is devoted on the problem of miniaturizing modern electronic devices to allow high speed and high density. Considering the effects in short channel metal oxide semiconductor field transistors (MOSFET), in practice the device is scaled to preserve the long-channel characteristics after miniaturization. In this work, several parameters are chosen and their sensitivity analysis is used for the miniaturization of a MOSFET. The objective is to mininturize the device in such a way to avoid the break down effects at high bias.
- Published
- 1996