1. E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology
- Author
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Li-Fang Jia, Zhang Yun, Zhang Lian, De-Feng Lin, Cheng Zhe, Ai Yujie, Jin-Chao Zhao, and Jin-Ping Xiao
- Subjects
Materials science ,High-electron-mobility transistor ,Signal edge ,Integrated circuit ,01 natural sciences ,Noise (electronics) ,Article ,law.invention ,AlGaN/GaN ,monolithic integration ,law ,0103 physical sciences ,inverter ,TJ1-1570 ,Wafer ,Mechanical engineering and machinery ,Electrical and Electronic Engineering ,D-mode ,010302 applied physics ,p-GaN ,business.industry ,Mechanical Engineering ,Power (physics) ,Control and Systems Engineering ,small variations ,E-mode ,Optoelectronics ,Inverter ,business ,Voltage - Abstract
AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical characters have been analyzed from room temperature (RT) to 200 °C. Small variations of the inverters are observed at different temperatures. The logic swing voltage of 2.91 V and 2.89 V are observed at RT and 200 °C at a supply voltage of 3 V. Correspondingly, low/high input noise margins of 0.78 V/1.67 V and 0.68 V/1.72 V are observed at RT and 200 °C. The inverters also demonstrate small rising edge time of the output signal. The results show great potential for GaN smart power integrated circuit (IC) application.
- Published
- 2021
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