1. Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes
- Author
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Li Xin Tian, Fei Yang, Ling Sang, Yi Ying Zha, Xi Ping Niu, Jing Hua Xia, Liang Tian, Jun Min Wu, and Rui Jin
- Subjects
010302 applied physics ,Fabrication ,Materials science ,Field (physics) ,business.industry ,Mechanical Engineering ,02 engineering and technology ,Limiting ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Mechanics of Materials ,0103 physical sciences ,Optoelectronics ,General Materials Science ,0210 nano-technology ,business ,Diode - Abstract
Designed for 6500V 4H-SiC JBS diodes, a highly-efficient termination structure of a non-uniform multiple floating field limiting rings (MFFLR) featuring with a non-uniform ring spacing and a multiple region division is studied and purposed. For each region, ring spacing is modulated independently by a multiplication factor and a linear increment factor. The non-uniform MFFLR structure is simulated and optimized for a better electric field distribution and a higher breakdown voltage. Based on the simulation results, 4H-SiC JBS diodes with the optimized non-uniform termination designs are fabricated. Experimental results show that the SiC JBS diode with optimized non-uniform MFFLR termination structure can achieve a breakdown voltage of up to 7800 V, and its termination efficiency is about 94% of an ideal parallel-plane junction’s. Our results demonstrate that the optimized non-uniform MFFLR termination structure is capable for SiC JBS diodes with breakdown voltage of 6500V and above. Our results can provide a valuable design methodology of edge termination structures for other high-voltage SiC devices.
- Published
- 2020