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In this study, a flexible film temperature sensor was fabricated by screen printing technology. The temperature sensor was fabricated by firstly printing nano-silver conductive ink and sequentially carbon temperature sensitive ink onto a flexible polyethylene terephthalate (PET) substrate. By changing the proportion of nano-carbon black in the temperature sensitive ink and the sintering temperature of the nano-silver conductive ink, the effects on the conductivity and temperature sensitivity of the flexible film sensor were investigated, and the linearity, hysteresis and stability of the prepared sensor were verified. When the sintering temperature of silver electrode based on PET film was 130 °C, the electrode square resistance was 10.2 mΩ/□. When the ambient temperature varies between 25 and 75 °C, the resistance of the temperature sensor decreases as the amount of nano-carbon black added increases. Besides, the flexible temperature sensor shows high linearity and good stability. By virtue of the flexibility, simple preparation process and low cost, this flexible temperature sensor that can be found useful in a certain range of applications, including wearable devices, biomedical devices, smart packaging and smart house.

Silicon oxynitride (SiNxOy) is a highly promising functional material for its luminescence performance and tunable refractive index, which has wide applications in optical devices, non-volatile memory, barrier layer, and scratch-resistant coatings. This review presents recent developments, and discusses the preparation methods, performance, and applications of SiNxOy film. In particular, the preparation of SiNxOy film by chemical vapor deposition, physical vapor deposition, and oxynitridation is elaborated in details.

Artificial skin is an important research direction in artificial intelligence and robotics. Response of artificial skin to stimuli in the external environment is multifunctional, including temperature, pressure and so on. In this paper, the integrated film sensor measuring force and temperature can simultaneously sense the external pressure and the temperature stimulation. To build the sensor, the integration of strain and temperature measurement materials is on a PET film. This integrated film sensor then has a good scalability and mechanical performance, and can according to the specific application of environment to carry on various design and application measurement. Thus, such kind of force and temperature integrated thin film sensor can be widely used, especially in artificial skin, intelligent robot, artificial limb, medical examination and so on.

Flexible pressure sensors are attracting great interest from researchers and are widely applied in various new electronic equipment because of their distinct characteristics with high flexibility, high sensitivity, and light weight; examples include electronic skin (E-skin) and wearable flexible sensing devices. This review summarizes the research progress of flexible pressure sensors, including three kinds of transduction mechanisms and their respective research developments, and applications in the fields of E-skin and wearable devices. Furthermore, the challenges and development trends of E-skin and wearable flexible sensors are also briefly discussed. Challenges of developing high extensibility, high sensitivity, and flexible multi-function equipment still exist at present. Exploring new sensing mechanisms, seeking new functional materials, and developing novel integration technology of flexible devices will be the key directions in the sensors field in future.

Total ionizing dose (TID) effect and single event effect (SEE) from space may cause serious effects on bulk silicon and silicon on insulator (SOI) devices, so designers must pay much attention to these bad effects to achieve better performance. This paper presents different radiation-hardened layout techniques to mitigate TID and SEE effect on bulk silicon and SOI device and their corresponding advantages and disadvantages are studied in detail. Under 0.13 μm bulk silicon and SOI process technology, performance comparisons of two different kinds of DFF circuit are made, of which one kind is only hardened in layout (protection ring for bulk silicon DFF, T-gate for SOI DFF), while the other kind is also hardened in schematic such as DICE structure. The result shows that static power and leakage of SOI DFF is lower than that of bulk silicon DFF, while SOI DFF with T-gate is a little slower than bulk silicon DFF with protection ring, which will provide useful guidance for radiation-hardened circuit and layout design.