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The deposition rate of polysilicon and the temperature and concentration profiles of the reactant gases in a monosilane Siemens reactor were compared for rod diameters of 10–120 mm using the computational fluid dynamics method. It was found that the power consumption primarily depends on the Si rod diameter and the Si deposition rate. The relationship between the power consumption and the Si deposition rate at different Si rod diameters was established from the accumulated experimental data of a pilot-scale four-rod reactor, and it is incorporated into the MonoSim-S software package.

The computational fluid dynamics-based FLUENT program was employed to model the heat transfer and chemical reaction in a mono-silane Siemens reactor. The kinetic parameters for the 1-step overall reaction SiH4→Si+ 2H2, such as the pre-exponential factor, temperature coefficient, and activation energy, were carefully optimized to satisfy experimental data obtained from the 4-rod Siemens pilot reactor. Established models were successfully used to evaluate the effects of rod diameter, reaction temperature, and reactant gas flow rate on the deposition rate of silicon.