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Your search keyword '"Sumakeris, Joseph J."' showing total 2 results
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2 results on '"Sumakeris, Joseph J."'

1. Design and characterization of high-voltage 4H-SiC p-IGBTs

Author

Qingchun Zhang, Jun Wang, Jonas, Charlotte, Callanan, Robert, Sumakeris, Joseph J., Sei-Hyung Ryu, Das, Mrinal, Agarwal, Anant, Palmour, John, and Huang, Alex Q.

Subjects
Voltage -- Electric properties, Gate arrays -- Evaluation, Silicon carbide -- Electric properties, Field programmable gate array, Business, Electronics, Electronics and electrical industries
Abstract

The fabrication and characterization of high-voltage p-channel 4H-SiC insulated gate bipolar transistors (IGBTs) are described. The advantages of SiC p-IGBTs have made them suitable for high-power high-frequency applications.

Published
2008

2. Performance and stability of large-area 4H-SiC 10-kV junction barrier Schottky rectifiers

Author

Hull, Brett A., Sumakeris, Joseph J., O'Loughlin, Michael J., Qingchun Zhang, Richmond, Jim, Powell, Adrian R., Imhoff, Eugene A., Hobart, Karl D., Rivera-Lopez, Angel, and Hefner, Allen R., Jr.

Subjects
Voltage -- Evaluation, Diodes, Schottky-barrier -- Evaluation, Silicon carbide -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

The forward and reverse bias dc characteristics, the long-term stability under forward and reverse bias and the reverse recovery performance of 4H-SiC junction barrier Schottky (JBS) diodes that are capable of blocking in excess of 10 kV with forward conduction of up to 10 A at a forward voltage of less than 3.5 V are described. The diodes have shown a positive temperature coefficient of resistance and a stable Schottky barrier height of up to 200 degree centigrade.

Published
2008

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