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Highly stable on-chip frequency references offer the possibility of replacing crystal oscillators in many cost- and form-factor-constrained applications. However, achieving good frequency stability in a power-efficient manner across process, voltage, and temperature variations possess many design challenges. This article describes these challenges and presents a method for improving the integrated RC oscillator's frequency accuracy by overcoming them. We show that the impact of resistor temperature coefficient (TC) on the accuracy of output frequency can be mitigated by using a parallel combination of two switched resistors that are digitally controlled by pulse-density modulated sequences. By trimming at only two temperatures, a prototype frequency-locked loop (FLL)-based 32-MHz oscillator fabricated in a 65-nm CMOS process achieves an inaccuracy of 530 ppm (8.4 ppm/°C), 80-ppm/V voltage sensitivity, 2.5-ppm Allan deviation, and 1-μW/MHz power efficiency.

Bolometer sensors are prominent and excellent choice in technology because they do not need cooling. The trade-off between high sensitivity, fast response time, and strong light absorption is a key important challenge in bolometer sensors. Here, the bolometric effect for a high resistance sensitivity plasmonic sensing of total and profile infusion of radiation is studied for the proposed bolometer sensor based on plasmonic multilayer structure at 26° C. In the present study, by generating strong coupling condition between incident wave and surface plasmon polaritons (SPPs), a very narrow absorption spectra with high figure of merit (FoM) is achieved. The analytical model and numerical simulation are fulfilled based on the transfer matrix method (TMM) and 3-D finite-difference time-domain (FDTD), respectively. The narrow absorption spectra that generate by strong coupling with SPPs heats the silver thin film that leads to variation in temperature and supports TE surface mode. This temperature change rectifies the resistance of the metal thin film by the bolometric effect. So, optical characteristics of the proposed metasurface bolometer sensor, including quality factor (Q), sensitivity, and figure of merit (FoM) are calculated that Max sensitivity, FoM, and Q are 17.2 RIU-1, 530 and 434.5, respectively. Finally, we analytically simulate the temperature coefficient of resistance (TCR) in terms of wavelength and refractive index of analyte (na) that this resistance change can be monitored by an external electric model. The proposed plasmonic multilayer configuration is a very compact footprint structure that achieved high resistance sensitivity and FoM in comparison with any previous reports. This proposed thermal, optical, and electric plasmonic metasurface bolometer sensor can be used in different applications such as biophysics, biology, and environmental science.

In case of photovoltaic (PV) most of the solar energy gets dissipated in the form of heat into the PV module. In the current context, efforts are made to improve the efficiency by utilizing this dissipated heat. One of the ways is to use low temperature thermoelectric (TE), based on the Seebeck effect, along with the PV cell. The mathematical model studied for performance evaluation, using ANSYS software, was based on cascaded hybrid Photovoltaic-Thermoelectric-Direct Evaporative Cooling System (PV-TE-EC) combinations, i.e. PV-EC (without TE), PV-TE-EC, PV-2TE-EC (two cascaded layers of TE sandwiched between PV and EC) and PV-3TE-EC (module with three cascaded TE layers) modules. Also, the effect of solar concentration ratio, temperature coefficient and wind speed was investigated. At concentration ratio 7, the resultant efficiencies of PV-TE-EC, PV-2TE-EC and PV-3TE-EC were higher than PV (15.71%) by 2.15, 4.87 and 6.54% respectively. It has been proposed that this efficiency can be further increased by using low temperature coefficient PV (0.34–0.38%/⁰C), radiation focusing unit with concentration ratio 3 to 7 and keeping the complete PV-3TE-EC setup at the lower wind speed location (≤1 m/s). This combination of parameters will allow the PV-3TE-EC hybrid system to demonstrate nearly constant efficiency throughout the day.

Domain wall current (DWC) plays a key role in storage devices, logic devices and sensors due to its high on-off ratio and nano structure size in the era of nanoelectronics technology. In this work, the DWC of single crystal LiNbO3 thin film was studied by piezoresponse force microscope (PFM) and conducting atomic force microscope (c-AFM). We mainly focus on voltage and temperature dependence of DWC which increases with the voltage and temperatures. Based on this research, the packaged DWC temperature sensor is fabricated and applied in wide temperature range. The existence of domain walls makes the current on-off ratio as high as 103 at the voltage of 15 V. Our study shows that DWC has a negative temperature coefficient (NTC) from 140 K to 500 K. The current increases from 3 pA to 57 μA, which is attributed to the conductivity of switched domain. This work proposes a new type temperature sensor with wide temperature range and high compatibility and sensitivity. In addition, it provides support for harsh environment applications of ferroelectric domain engineering devices.

Currently, the exploration of wearable strain sensors that can work under subzero temperatures while simultaneously possessing anti-interference capability toward temperature is still a grand challenge. Herein, we present a low-temperature wearable strain sensor that is constructed via the incorporation of a Ag nanowires/graphene (Ag NWs/G) composite into the polydimethylsiloxane (PDMS) polymer. The Ag NWs/G/PDMS strain sensor exhibits promising flexibility at a very low temperature (-40 °C), outstanding fatigue resistance with low hysteresis energy, and near-zero temperature coefficient of resistance (TCR). The Ag NWs/G/PDMS strain sensor shows excellent sensing performance under subzero temperatures with a very high gauge factor of 9156 under a strain of36%, accompanied by a noninterference characteristic to temperature (-40 to 20 °C). The Ag NWs/G/PDMS strain sensor also demonstrates the feasibility of monitoring various human movements such as finger bending, arm waving, wrist rotation, and knee bending under both room temperature and low-temperature conditions. This work initiates a new promising strategy to construct next-generation wearable strain sensors that can work stably and effectively under very low temperatures.

This letter reports the avalanche and surge current ruggedness of the industry's first 1.2-kV-class vertical GaN p-n diodes fabricated on 100-mm GaN substrates. The 1.2-kV vertical GaN p-n diodes with a 1.39-mm2 device area and an avalanche breakdown voltage of 1589 V show a critical avalanche energy density of 7.6 J/cm2 in unclamped inductive switching tests, as well as a critical surge current of 54 A and a critical surge energy density of 180 J/cm2 in 10-ms surge current tests. All these values are the highest reported in vertical GaN devices and comparable to those of commercial SiC p-n diodes and merged p-n Schottky diodes. These GaN p-n diodes show significantly smaller reverse recovery compared to SiC p-n diodes, revealing less conductivity modulation in n-GaN. The negative temperature coefficient of differential on-resistance and the anticlockwise surge I–V locus are believed to be due to the increased acceptor ionization in p-GaN and the decreased contact resistance at high temperatures. These results suggest a high ruggedness of GaN p-n junctions with small bipolar currents and fast switching capabilities. As the first electrothermal ruggedness data for industry's vertical GaN devices, these results provide key new insights for the development of vertical GaN devices as well as their application spaces.

Soft candy was discovered to be an excellent electronic material and was used to fabricate electrodes for salivary conductivity-based diagnostics. Using a simple molding process, a soft candy (Tootsie Roll) was made into 20 × 20 × 5 mm electrodes with a stable frequency response (0.1-100 kHz). The soft candy electrode-liquid interface circuit model was also developed for the first time. Using 0.01, 0.05, and 0.1 M phosphate-buffered saline and artificial saliva of varying conductivities, the performance of the soft candy (Tootsie Roll) electrode was evaluated. The electrode has a low temperature coefficient of ∼0.02 V/C, and the evaporation-induced mass change during measurement (

The local breakdown behavior may be harmful to solar cells and could possibly permanently damage the cell. Therefore, understanding the breakdown mechanisms in commercially competitive photovoltaic devices such as monocrystalline silicon (Si) solar cells is of great importance. Here, by using the reverse-biased electroluminescence (ReBEL) imaging technique, we observed three types of breakdown phenomena in monocrystalline Si solar cells: defect-induced breakdown, avalanche breakdown, and early breakdown. We have applied a variety of methods to diagnose each breakdown mechanism. The positions of defect-induced breakdown were first determined by combining EL and ReBEL imaging. An innovation method, the distributed circuit modeling was further introduced to trace the formation of different defect-induced breakdown sites. It is firstly applied this approach in the analysis of the breakdown mechanism. Then, avalanche breakdown was demonstrated by the temperature coefficient. The origin of its emission spectra was analyzed by the Si energy band structure combined with Baraff theory. Moreover, the characteristic of early breakdown was found to be consistent with the Zener effect, which may be caused by the metal stains such as aluminum (Al) during the manufacturing process.

This brief presents a picowatt CMOS voltage reference with ultra-low supply and wide temperature range. Biased by PMOS leakage current, ultra-low voltage and ultra-low power consumption are achieved. The temperature range is enlarged by using the increased bulk diode leakage current modulation (BDLCM) effect at high temperature. The proposed design is implemented in a standard 0.18- $\mu \text{m}$ CMOS process. The measurement results show that, the proposed circuit can provide an average voltage reference of 118.1 mV with a standard deviation of 1.3 mV. The minimum supply voltage is 250 mV and the line sensitivity (LS) is 0.3 %/V. The average temperature coefficient (TC) is 73.5 ppm/°C with a standard deviation of 11.7 ppm/°C within a temperature range from −40 °C to 140 °C. The power supply ripple rejection (PSRR) at 100 Hz is −65 dB. The power consumption at room temperature is 113 pW and the active area is 0.0009 mm2.

In the past few years, many types of surface acoustic wave (SAW) strain sensors have been developed using various piezoelectric substrates to improve detectable range and sensitivity. In this paper, we report a SAW flexible strain sensor based on ultra-thin AT-X quartz plate with a thickness of 31 $\mu {\mathrm {m}}$ . The sensor has a high sensitivity of $251.9 \mathrm{~Hz} / \mu \varepsilon$ , an excellent linearity for the strain range from 1 to $5000~\mu \varepsilon$ , and which is about 12 times higher than those of other SAW strain sensors based on bulk substrates. The resolution of the sensors is about 3280 Hz in frequency and $14~\mu \varepsilon$ in strain. Moreover, the sensors exhibit a very low temperature coefficient of frequency (TCF) of about −1.06 ppm/°C in the temperature range from 20 to 80°C. Our new sensor paves the way for the fabrication of high-performance strain sensing devices.

Floating-Gate-Ions-Sensitive-Field-Effect-Transistors (FG-ISFETs) are becoming the sensor’s platform for various fields such as biomedical and chemical sensors. Despite many advantages like quick response, small size as well as wide measurement range, the efficiency of the output measurement is widely affected by temperature, This requires more safety in the measured results and the analysis’s tools. This study describes a novel integrated circuit that improves the thermal stability of the output signal of the ion-sensitive field effect transistors (ISFETs). After that, we investigate the temperature dependency of the FG-ISFET using the mentioned macro model and we shows that the temperature coefficient is about of 6 mV/°C. Afterward, a new integrated interface circuit that can perform great temperature compensation was developed. This operation aims to enhance stability of readout circuit for FG-ISFET. The achieved result of the FG-ISFET under different simulations shows that the readout circuit has a good temperature compensation i.e. :2.4 〖10〗^(-9) mV/°C.

Three-dimensional (3D) nanoparticle printing has emerged as a versatile and environmentally friendly manufacturing technique to fabricate metallic films for microelectronic applications. In this letter, we report the synthesis of 500 nm thick nickel films by aerosol jet nanoparticle printing and assess their stability at high temperatures. In-situ impedance spectroscopy is used to measure the electrical properties of the films from 25 °C to 500 °C, at frequencies from 0.02 kHz to 300 kHz. It is observed that the real part of impedance of the films increases from room temperature to 350 °C monotonously, indicating a positive temperature coefficient of resistance (TCR). Upon further heating, however, the films exhibit an unstable electrical behavior, with TCR increasing by two orders of magnitude between 350 °C and 500 °C. Thermogravimetric analysis (TGA) of nickel nanoparticles was performed to understand the underlying reason of electrical instability beyond 350 °C, which showed that the particle oxidation starts at about 325–350 °C and leads to a mass gain of 19.35% at 500 °C, indicating significant thermal oxidation. The electrical stability of the films at high temperatures is thus controlled by their thermal oxidation, which starts at a much lower temperature (350 °C) when compared to bulk nickel (600 °C). Implications of this result on the applicability of the 3D printing method to synthesize metal films for high temperature applications are discussed.

In this article, near-zero drift and high electromechanical coupling acoustic resonators have been designed and demonstrated. The acoustic resonator is based on Lamb acoustic waves in a bimorph composed of lithium niobate on silicon dioxide. Our approach breaks through a performance boundary in conventional Lamb-wave resonators by introducing the bimorph while operating at higher order resonant modes. This enables the resonator to achieve frequency scalability, a low-temperature coefficient of frequency, and high electromechanical coupling altogether. The electromechanical coupling and temperature coefficient of the resonator were analytically optimized for the A3 mode through adjusting the thicknesses of different materials in the bimorph. Resonators with different dimensions and stack thickness were fabricated and measured, resulting in a temperature coefficient of frequency ranging from −17.6 to −1.1 ppm/°C, high electromechanical coupling ranging from 13.4% to 18%, and quality factors up to 800 at 3.5 GHz. The achieved specifications are adequate for fifth-generation (5G) sub-6-GHz frequency bands n77 and n78.

We report on the first experimental characterization and analysis of the thermal response and temperature coefficient of resonance frequency (TC $f$ ) of gallium nitride/aluminum nitride (GaN/AlN) heterostructure micro string resonators, in a wide temperature range from −10 °C up to 325 °C. Thanks to its excellent electrical and mechanical properties and chemical inertness, GaN has recently stimulated growing interests in GaN microelectromechanical systems (MEMS) for emerging high-power, high-temperature, and harsh-environment applications. GaN films on Si wafers often require AlN buffer layers, thus the residual tensile stress profile in the GaN epilayers and GaN/AlN hetero-layers can play a key role in affecting the MEMS specifications and performance. Here we design and fabricate GaN/AlN heterostructure micro string resonators with length $L = 100$ , 200 and 300 $\mu \text{m}$ to probe the stress and thermal effects on resonance behavior. All out-of-plane flexural modes show clear string behavior, and the multimode resonance frequencies downshift almost linearly with increasing temperature up to 325 °C. The linear temperature dependence and TC $f$ values of GaN/AlN heterostructure resonators can be directly employed for thermal sensing. Comparison among different devices indicates that higher tensile stress levels contribute to smaller TC $f$ values, suggesting strain engineering may be exploited for intentionally regulating the TC $f$ .

The decreased efficiency of a photovoltaic panel due to temperature rise during high solar radiation is one of the major drawbacks. The efficiency drop is due to hotness, which restricts the conversion of incident sun rays into electricity by the silicon cells. Thus, a photovoltaic panel has a negative temperature coefficient that increases the current but drops the voltage potential. In this work, water immersion cooling of the photovoltaic panel is studied to improve panel performance. The module is studied with and without water immersion in a tank made up of acrylic material. The photovoltaic (PV) efficiency is determined at different depths of water immersion (10 to 40 mm) inside the acrylic tank. The solar radiation and thermal and electrical parameters of PV are observed at an interval of 60 min, and besides, the solar radiation is also measured. The electrical efficiency without immersion is about 14.24% at solar radiation of about 725 W/m2. The photovoltaic panel was observed at a temperature of around 30 °C during the water immersion. The panel efficiency with an immersion depth of 10, 20, 30, and 40 mm is approximately 15.02%, 15.54%, 14.58%, and 13.95%, respectively. The results show that the immersion of PV panels in tap water 20 mm increases the PV efficiency by 9.1% compared to the PV without water immersion. The presented experimental results are beneficial to the solar community to improve the PV performance without external power.

In this work, we present the first group of gigahertz low-loss, wideband, and high power handling delay lines (ADLs) using a thin-film lithium niobate (LiNbO3)-on-sapphire platform. The ADLs leverage a single-phase unidirectional transducer (SPUDT) to efficiently excite the shear horizontal surface acoustic wave (SH-SAW) in the film stack. The fabricated miniature SH-SAW ADL at 1.1 GHz shows a low insertion loss (IL) of 2.8 dB, a wide fractional bandwidth (FBW) of 6.14%, and a fast phase velocity of 5127 m/s. The device also features a high 1-dB compression point (P1dB) of 30.4 dBm. The temperature coefficient of frequency is −45 ppm/K. ADLs with delays between 12 and 172 ns have been implemented, with IL between 2.8 and 8.3 dB. SH-SAW propagation characteristics are extracted, showing a group velocity of 4747 m/s and a propagation loss of 6.73 dB/mm or 31.9 dB/ $\mu \text{s}$ . The simultaneous low-loss and high power handling illustrate the great potential of LiNbO3-on-sapphire for RF and cross domain applications at gigahertz.

During the last decades, significant improvements of both the magnetoresistance (MR) and the temperature coefficient of resistivity (TCR) of ceramics (at room temperature) have opened new opportunities to build uncooled infrared bolometers and magnetic sensor devices. Herein, polycrystalline La0.7K0.3−xSrxMnO3 ceramics, with 0.00 ≤ x ≤ 0.25 were prepared by a facile sol–gel method. TCRmax increased from 6.4% K−1 at 270.2 K (for x = 0.00) to 11.9% K−1 at 291.2 K (for x = 0.05), and the low-field (1 T) MRmax reached 30.5% at 294.5 K. The phenomenological percolation (PP) model, the Jahn–Teller (JT) effect, and the double exchange (DE) mechanism were used for the comprehensive understanding of the nature of electromagnetic transport properties. Another interesting finding is that the TCR characteristic can be calculated by using the PP model. The JT effect, DE mechanism, and PP model clearly modified both the TCR and MR of the prepared ceramics. The relationship between the proposed TCR/MR dependency and several scattering factors opens up new avenues to enhance TCRmax and MRmax of manganite ceramics.

This letter presents a new class of High-overtone Bulk Acoustic Resonators (HBARs) with only top electrodes but excellent performance using lithium niobate (LN) thin films on conductive silicon carbide (SiC). The 4-inch single-crystalline lithium niobate thin film on conductive SiC (LNCSiC) substrate was prepared by ion-cutting process. Since the conductive SiC serves as both the resonant cavity and the floating electrode, the HBARs based on LNCSiC with only top electrodes were designed and fabricated. The devices show a wide frequency response span exceeding 2.0 GHz, a frequency spacing of 10 MHz, an excellent f $\cdot $ Q $_{\textit {LAKIN}}$ product of ${9.6}\times {10} ^{{13}}$ Hz ( f $\cdot $ Bode-Q of ${1.1}\times {10} ^{{14}}$ Hz), and a low temperature coefficient of frequency (TCF) of −18.9 ppm/°C. The frequency response shift of the proposed HBAR can be achieved by just adjusting the in-plane orientation of the top electrodes. Additionally, a multi-band filter was numerically synthesized based on the proposed HBARs, showing a spectral spacing of 10 MHz and a passband span of more than 2.0 GHz. Upon further optimizations, the proposed HBARs with a wide frequency response, a high- f $\cdot $ Q , and a low-TCF will be very promising for radio-frequency applications.

In flat-plate PV/T systems, there are some contradictions in the temperature requirements for the heat and electricity acquisition. The widely-used crystalline-silicon solar cells are negatively affected by the high temperature inside the PV/T collector. This paper proposes to use temperature-insensitive solar cells in PV/T and the CdTe used has the advantages of low power temperature coefficient, high photovoltaic efficiency, and low costs. Besides, the sandwich structure that CdTe cells are sealed between two pieces of glass can prevent them from the permeating of moist air. The CdTe-PV/T is experimentally tested and compared with a Poly-Si-PV/T system and it exhibits better instantaneous electrical performance at high operating temperatures and gains more electrical energy throughout the day. Then the influence of cells’ coverage ratio is investigated experimentally and the result shows that a higher coverage ratio is beneficial to the electrical and energy-saving performance. Furthermore, a new quasi-steady-state mathematical model is established and verified. Parametric discussions are conducted for performance optimization. The black TPT coating with higher emissivity performs better than the selective absorption coating of the absorbing plate, contrary to the traditional PV/T collector. The heat transfer mode between the back glass and the absorbing plate is different in different thicknesses of the air gap. Reducing the thickness can effectively improve the system’s performance in terms of thermal, electrical, and temperature. Then an improved CdTe-PV/T eliminating the backglass and air gap is proposed and numerically simulated. This research hopes to provide some ideas for the applicant and the optimization of CdTe-PV/T in hot climates.

Purpose This study aims to present an efficient and reliable graphene nanoplatelets (GNPs)-based temperature sensor. Design/methodology/approach A high-quality dispersion of GNPs was dropped by casting method on platinum electrodes deposited on a polyethylene terephthalate (PET) substrate. The GNPs were characterized by scanning electron microscope, Raman spectroscopy and X-ray diffraction spectra to ensure its purity and quality. The temperature sensing behavior of the fabricated sensor was examined by subjecting it to different temperatures, range from room temperature (RT) to 150 °C. Findings Excellent resistance linearity with temperature change was achieved. Temperature coefficient of resistance of the fabricated sensor was calculated as 1.4 × 10–3°C. The sensor also showed excellent repeatability and stability for the measured temperature range. Good response and recovery times were evaluated at all the measured temperatures. With measuring the sensor response, the ambient temperature can be determined. Originality/value The present work presents a new simply and low cost fabricated temperature sensor based on GNPs working at a wide temperature range.

CaAl2 − 2xZnxTixO4 (x = 0.05, 0.10, 0.15) ceramics with low permittivity have been prepared via a standard solid-state reaction method. The partial co-substitution of (Zn0.5Ti0.5)3+ for Al3+ can effectively lower the sintering temperature of CaAl2O4 ceramics by approximately 200 °C. Meanwhile, the large negative temperature coefficient of resonant frequency (τf = − 55 ppm/°C) of CaAl2O4 ceramics can be simultaneously modified toward zero. With increasing x, the quality factor (Qf) indicates a downward changing trend owing to the appearance of ZnAl2O4 and CaTiO3 secondary phases. The optimum microwave dielectric properties (er = 11.9, Qf = 28,090 GHz, and τf = − 1.2 ppm/°C) are achieved at x = 0.15. Moreover, a microstrip patch antenna is fabricated using the x = 0.15 ceramic as the dielectric substrate. The fabricated antenna demonstrates a S11 value of − 17.8 dB at 4.9 GHz and a measured − 10 dB bandwidth of 86 MHz. The good antenna performances suggest that the present ceramics are good candidates for 5G antenna applications at the sub-6 GHz band.

In this communication, various electrical properties of pure Mn3TeO6 (MTO) multiferroic compound are presented in the quest to understand the conduction mechanism. Mn3TeO6 multiferroic compound was synthesized by the solid-state reaction method. Room temperature X-ray Diffraction characterization technique has been used for the structural aspect. The crystallographic studies reveal single phase formation of the MTO compound with trigonal (Hexagonal axes) crystal structure in R $$\bar{3}~$$ space group. The energy dispersive spectroscopy (EDS) analysis helped to carry out the compositional purity of the prepared compound. Field emission scanning electron microscopy (FE-SEM) demonstrates the distribution of irregular shapes and sizes of particles. Detailed investigation of electrical parameters in the frequency range: 20 Hz–1 MHz and temperature range: 303–393 K exhibits the essential aspects of conduction for the Mn3TeO6 (MTO) multiferroic compound. The systematic investigation of complex impedance study (Nyquist plot) confirms the existence of non-Debye type relaxation in the compound. The contribution of grains interior on capacitance and resistance of the compound are discussed, which shows negative temperature coefficient resistance (NTCR) characteristics like semiconductors. The activation energy was evaluated from the different analyses. Jonscher's power law was successfully followed by the conductivity graph. A strong dependence of charge carriers on temperature was observed from the I-V characteristic of the compound. Different aspects of charge carrier properties are presented in this paper.

The influence of temperature and ionized radiation on the properties of current stabilizers, based on JFETs with p-n-junction as a gate and MOSFETs in saturation mode at two-pole connecting when the gate and source are closed, is experimentally investigated. It is shown that current temperature coefficient of the JFET is negative, and the one of the second type is positive. Connecting a stabilizing resistor of a proper value to the FET source circuit allows us to reduce the temperature changes in the output current of stabilizer at one FET to a minimum for both JFET with p-n-junction and MOSFET. However, in this method of temperature stabilization of output current, the output power of stabilizer is significantly reduced. For the first time the suggested design of the current reference operates on the principle of compensation of external influences on device, composed of two different types of FET with inverse reaction to this influence. It was experimentally proved that by parallel connection of such transistor pairs, it is possible to get a stable current reference generator in a wide temperature range. Moreover, experiments have shown that if a MOSFET with small drain saturation current is selected for the current reference, then the effect of ionizing radiation on the entire device will be compensated, since after radiation the current through such MOSFET will increase, and the current through JFET will decrease.

In silicon-based piezoresistive pressure sensor, the accuracy of the sensor is affected mainly by thermal drift and the sensitivity of the sensor varies with the rise in temperature. Here, the temperature effects on the desired representation of the sensor are analysed. Use of smart material Carbon nanotubes (CNT) and a few effective temperature compensation techniques are presented in this study to reduce the temperature effect on the accuracy of the sensor. Resistive compensation employed extra piezoresistors with Negative Temperature Coefficient of Resistivity (TCR) for temperature compensation. The attainment of the desired compensation techniques is highly compatible with the MEMS device fabrication. The compensated pressure sensor is supremacy for pressure measurement with temperature variations. Though various techniques have been suggested and put into actuality with successful attainment, the techniques featuring easy implementation and perfect compatibility with existing schemes are still blooming demanded to design a piezoresistive pressure sensor with perfect comprehensive performance. In this paper, CNT piezoresistive material has been employed as sensing elements for pressure sensor and compared with silicon in terms of output voltage and sensor performance degradation at higher temperature. Pressure sensors using CNT and silicon piezo resistive sensing materials were simulated on silicon (100) diaphragm by ANYSIS. Based on simulation results, silicon and CNT both pressure sensor also shows better results at near room temperature. With the increasing temperature it is observed that silicon pressure output underestimated by 23%.

The solar cells commonly adopted in the photovoltaic/thermal (PV/T) have negative temperature coefficients, leading to a significant decrement in electrical efficiency as cell’s temperature exceeds 80 °C, and thus the PV/T systems are mainly used at low-temperature applications. A new type of InGaN/GaN multiple quantum wells (InGaN/GaN MQWs) cells have attracted increasing interest in past few years. The cells have positive or near-zero temperature coefficients and are a promising option in medium-high temperature applications. It is the first time that InGaN/GaN MQWs cells are proposed in a PV/T system, and evacuated flat plate PV/T (EFP-PV/T) collectors are employed. A mathematical model is established to investigate the performance of EFP-PV/T collectors using two kinds of InGaN/GaN MQWs cells at high temperatures. Performance comparison with PV/T systems using conventional solar cells is also conducted. As the operating temperature increases to 150 °C, the efficiency of traditional cell-based PV/T collector decreases to 5.21%, while the efficiency of Type-1 InGaN/GaN MQWs has a minor drop from 4.34% to 4.16% and it increases to 2.07% for Type-2 InGaN/GaN MQWs. The characteristics of large absorption coefficient, radiation-hard, and superior thermal stability, and positive or near-zero temperature coefficients make InGaN/GaN MQWs cells suitable for use in high-temperature PV/T systems.

This article reports a new concept of surface-acoustic-wave (SAW) resonator, which uses shear horizontal (SH) wave confined in a thin LiTaO3 (LT) layer supported by a quartz (Qz) substrate. The LT layer is 35–50°YX LT, and the quartz substrate is 35–60°Y90°X Qz. A negative temperature coefficient of frequency (TCF) of the SH SAW in the LT layer is compensated by the quartz substrate, which shows a wide range of positive TCF depending on the crystalline orientation. Excellent TCFs of 2 and −10 ppm/°C were measured for the series and parallel resonance frequencies, respectively. The strong confinement of the SH SAW in the LT layer results in the best level of resonance characteristics ever reported. The measured impedance ratio reached 84 dB. On the other hand, spurious waves other than the SH SAW are not confined in the LT layer due to the unique properties of quartz, which results in spurious-free characteristics throughout a wide frequency range.

In this study, non-temperature interference strain gauge sensors, which are only sensitive to strain but not temperature, are developed by engineering the properties and structure from a material perspective. The environmental interference from temperature fluctuations is successfully eliminated by controlling the charge transport in nanoparticles with thermally expandable polymer substrates. Notably, the negative temperature coefficient of resistance (TCR), which originates from the hopping transport in nanoparticle arrays, is compensated by the positive TCR of the effective surface thermal expansion with anchoring effects. This strategy successfully controls the TCR from negative to positive. A near-zero TCR (NZTCR), less than 1.0 × 10-6 K-1, is achieved through precisely controlled expansion. Various characterization methods and finite element and transport simulations are conducted to investigate the correlated electrical, mechanical, and thermal properties of the materials and elucidate the compensated NZTCR mechanism. With this strategy, an all-solution-processed, transparent, highly sensitive, and noninterference strain sensor is fabricated with a gauge factor higher than 5000 at 1% strain, as demonstrated by pulse and motion sensing, as well as the noninterference property under variable-temperature conditions. It is envisaged that the sensor developed herein is applicable to multifunctional wearable sensors or e-skins for artificial skin or robots.

An evacuated flat-plate photovoltaic/thermal (E-PV/T) collector was proposed. The inner space of the E-PV/T collector is vacuumed to suppress non-radiative heat losses, thus increasing thermal efficiency of the collector. Therefore, the E-PV/T collector has the potential to simultaneously deliver electricity and heat at high temperatures. A mathematic model was developed to evaluate the performance of the E-PV/T collector. The effect of some key parameters (e.g., initial water temperature in the water tank, vacuum degree, long-wave panel emissivity, and temperature coefficient of solar cells) on the performance of the E-PV/T system was investigated and the results were compared with a normal flat-plate PV/T (N-PV/T) system. Results suggest that the vacuum helps to enhance the total efficiency by nearly 10% points in high-temperature conditions (>80 °C). The vacuum degree of the upper space exerts a greater effect on system efficiencies compared to that of the lower space. Lower long-wave panel emissivity and greater temperature coefficient of the solar cell promote the performance of the collector. By lowering the long-wave panel emissivity from 0.95 to 0.05, the total efficiency soars from 26.82% to 61.20%. This study may help to guide parametric optimization and operation strategy of flat-plate PV/T collectors for high-temperature applications.

The article is devoted to the analysis of thermal breakdown of insulation of electrical and power equipment due to disturbance of its thermal balance. The analysis was performed within the simplest model of thermal breakdown while ignoring the temperature distribution in the insulation volume. Particular attention is paid to the influence of extraneous sources of thermal energy on the thermal stability and the breakdown voltage of the electrical insulation structure. From the heat balance equation and the condition of thermal balance disturbance between the total thermal power in the insulation and the heat transferred into the surroundings, have been found analytical expressions that take into account the influence of extraneous sources of thermal energy on the critical operating temperature and the breakdown voltage of the insulation. The influence of extraneous sources of thermal energy on the dependence of the breakdown voltage on the dielectric parameters and the cooling conditions was analyzed. It is shown that the breakdown voltage of the insulation decreases exponentially with the increase of the power of extraneous heat sources and the temperature coefficient of tgδ, as well as the deterioration of the heat transfer conditions. It is established that the critical dielectric losses in the insulation leading to the breakdown do not depend on the power of extraneous sources of thermal energy. It is proposed to increase the electrical insulation safety factor for breakdown strength relatived to its operating voltage, taking into account the extraneous sources of heat, to ensure the stability of insulation against thermal breakdown in the presence of extraneous sources of thermal energy. References 10, figures 3.

In this paper, we demonstrate the ability to fabricate temperature sensors by using our newly developed carbon nanotube-graphene oxide (CNT-GO) ink to print temperature-sensitive traces on highly flexible, thin, and adhesive PET (polyethylene terephthalate) tapes, which in turn are integrated on surfaces of different curvatures and wettabilities. Therefore, the strategy provides a facile, low-cost, and environmentally friendly method to deploy printed temperature sensors on surfaces of widely varying curvatures and wettabilities. The temperature sensing occurs through a thermally induced change in the resistance of the printed traces and we quantify the corresponding negative temperature coefficient of resistance (α) for different conditions of curvatures and wettabilities. In addition, we identify that at low temperatures (below 15 °C), the printed traces show an α value that can be as large (in magnitude) as 60 × 10-3/°C, which is several times higher than the typical α values reported for temperature sensors fabricated with CNT or other materials. Furthermore, we achieve the printing of traces that are only 1-3 μm thick on a 50 μm-thick PET film: therefore, our design represents an ultrathin additively fabricated temperature sensor that can be easily integrated for wearable electronic applications. Finally, we show that despite being subjected to repeated temperature cycling, there is little degradation of the CNT-GO microarchitectures, making these printed traces capable of repeated uses as potential temperature sensors.

The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for 1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The circuit design provides a balance between high pressure sensitivity (S =44.9 mV/V/kPa) and fairly low temperature coefficient of zero signal (TCZ =0.094% FS/°C). Additionally, high membrane burst pressure of P =550 kPa was reached.

In this article, the design, fabrication and measurements are presented for an indirectly-heated RF MEMS thermoelectric power sensor with different terminal resistor dimensions. In this design, thermal isolation is achieved through a $20~\mu \text{m}$ -thick MEMS substrate membrane using back etching technology. In order to maintain the stability of impedance matching, two low temperature coefficient of resistance (TCR) tantalum nitride (TaN) resistors of $50~\Omega $ are adopted to serve as heating sources. Considering the effect of the terminal resistor dimension on RF power sensing performance, six configuration sensors have been explored experimentally. Experimental results show that the output response of these devices has excellent RF-DC linearity with the power from 1 mW to 200 mW. And as the dimension of the terminal resistor gradually increases, their sensitivities are $77.3~\mu \text{V}$ /mW, $63.4~\mu \text{V}$ /mW, $56.3~\mu \text{V}$ /mW, $54.4~\mu \text{V}$ /mW, $49.5~\mu \text{V}$ /mW and $47.9~\mu \text{V}$ /mW at 10GHz, respectively. Meanwhile, the measured response time is 3.2 ms, 2.9 ms, 2.7 ms, 2.5 ms, 2.2 ms and 2.0 ms, respectively. This indicates that as the size of the terminal resistor increases, the corresponding sensitivity and response time are decreasing. Therefore, there is a trade-off consideration between high sensitivity and fast response time. Further, an electromagnetic-thermal-electric model of the indirectly-heated RF MEMS power sensor is proposed based on the Seebeck effect and heat transfer theory. Experiments and finite element method (FEM) simulation are performed to verify the validity of the proposed model. The results would be useful to improve future sensor designs and specific applications.

The aim of this paper is to present a novel concept for control of hybrid photovoltaic-thermal systems: a Maximum Exergy Point Tracker. It operates by evaluation of the exergetic and energetic performance of a solar photovoltaic-thermal (PV/T) system, to find the maximum cell temperature that produces at least the same exergy as the system without cogeneration. This maximum working temperature is a very important issue for proper design of cogeneration plants and their operation. The operation with concentration showed better results for energetic and exergetic efficiencies, in addition to an increase in the maximum operating temperature of the photovoltaic cell, compared to operation without concentration. The results allow selecting a suitable photovoltaic cell for a given application, depending on its reference efficiency and temperature coefficient.

Ignition delay time measurements for multi-component natural gas mixtures were carried out using a rapid compression machine at conditions relevant to gas turbine operation, at equivalence ratios of 0.5–2.0 in ‘air’ in the temperature range 650–1050 K, at pressures of 10–30 bar. Natural gas mixtures comprising C1–C7 n-alkanes with methane as the major component (volume fraction: 0.35–0.98) were considered. A design of experiments was employed to minimize the number of experiments needed to cover the wide range of pressures, temperatures and equivalence ratios. The new experimental data, together with available literature data, were used to develop and assess a comprehensive chemical kinetic model. Replacing 1.875% methane with 1.25% n-hexane and 0.625% n-heptane in a mixture containing C1–C5 components leads to a significant increase in a mixture's reactivity. The mixtures containing heavier hydrocarbons also tend to show a strong negative temperature coefficient and two-stage ignition behavior. Sensitivity analyses of the C1–C7 blends have been performed to highlight the key reactions controlling their ignition behavior. The authors would like to acknowledge Science Foundation Ireland for funding via project number16/SP/3829. We also acknowledge funding from Siemens Canada Ltd. peer-reviewed

Reading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage (Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was proposed to optimize its temperature coefficient (Tco). The results suggested that the Tco of low temperature programmed high temperature read is larger than high temperature programmed low temperature read and this difference is about 2-3mv/°C, which makes against the temperature compensation of reading voltage and lead to irreparable data errors even there is error correction codes. Furthermore, the critical factor of this difference was demonstrated that is the charge loss during low temperature programmed high temperature read and the Vth shift caused by charge loss is up to 30 percent. Based on this, we proposed to optimize the Tco consistency by shortening the interval time of erase to program in endurance cycling stage and confirmed that this method is effective by experiment. As the time interval becomes smaller, the difference of the Tco decreases as well, which have great reference signification for improving the reliability of 3D NAND flash memory.

The influence of temperature and radiation on the threshold voltage and switching delay time of the switching device based on ChGS is evaluated. It is shown that when the temperature changes from 250 to 350 oК, the threshold voltage changes within 5 mV, and the temperature voltage coefficient is about 0,03 %/deg, which is much less compared to similar devices based on single-crystal semiconductors. Analytical expressions were obtained and a study of the dependence of the switching delay time on the temperature and density of capture traps near the Fermi level was performed. The results of studies of the dependence of the switching delay time on the temperature show that when the temperature changes from 250 to 350 К, the delay time changes by 0,35 ps, and the temperature coefficient of the delay time does not exceed 0,42 %/deg. Moreover, with increasing mobility of the charge carriers, the delay time decreases. The study of the dependence of the switching delay time on the density of the capture traps showed that this dependence is practically linear and when the density of the capture traps increases by an order of magnitude, the delay time also changes by an order of magnitude. Analytical dependences of charge carrier mobility and switching delay time on neutron flux density are obtained. It is shown that the change in neutron flux density up to 1016 N/cm2 the mobility of charge carriers slowly decreases from 10–2 to 0,99 10–2 cm2/V·s, and with a further increase in the dose to 1018 N/cm2 the mobility decreases twice and is 0,5 10–2 cm2/V·s. The switching delay time with increasing irradiation dose from 1010 to 1016 N/cm2 increases from 26,2 ns to 26,8 ns, and with a further increase in the neutron flux density, the delay time increases rapidly and is 57 ns at a neutron flux density of 1018 N/cm2. The results of the research indicate that switching devices based on chalcogenide glassy semiconductors are characterized by higher radiation resistance in comparison with devices based on single-crystal bipolar semiconductor components, the amplifying properties of which change at a neutron flux to 1012 N/сm2 decrease more than twice.

Continuous real-time measurement of body temperature using a wearable sensor is an essential part of human health monitoring. Electrospun aligned carbon nanofiber (ACNF) films are employed to assemble flexible temperature sensors. The temperature sensor prepared at a low carbonization temperature of 650 °C yields an outstanding sensitivity of 1.52% °C−1, high accuracy, good linearity, fast response time and excellent long-term durability. Moreover, it exhibits high discriminability towards temperature amidst other unwanted stimuli and maintains its original performance even after repeated stretch/release cycles because of highly-aligned structures. The correlation between the atomic structure and the temperature sensing performance of ACNF sensors is established. Contrary to conventional highly conductive temperature sensors, the ACNF sensor with a low electrical conductivity prepared at a low carbonization temperature ameliorates the temperature sensing performance. This anomaly is explained by (i) the smaller and more disordered sp2 carbon crystallites yielding a high negative temperature coefficient, (ii) a larger number of defects, and (iii) a higher pyridinic-N content generating abundant entrapped and localized electrons which are activated once sufficient thermal energy is available. Flexible ACNF sensor's overall performance is among the best-known carbon material-based flexible temperature sensors, demonstrating potential applications in emerging healthcare and flexible electronics technologies.

Flexible nanofiber-based composites have been widely explored because of their light weight, high surface area, scalability, and tunable physical and mechanical properties. In this work, we report electrospun 2D-Bi2S3 incorporated PVDF/PPy nanofibers as a versatile platform for ultrasensitive pressure, strain, and temperature sensing. Detailed characterization studies revealed the formation of ultrathin nanofibers and characteristic Raman and IR vibration modes of PPy, 2D-Bi2S3, β-phased PVDF. The fabricated pressure sensor exhibited a sensitivity of 1.51 kPa-1 in the wide linear range of 1-50 kPa and a response time of 0.04 s. The practical ability of pressure sensor was tested by successfully detecting pulse rate of human radial arteries. Further, the BS- PVDF/PPy composite was employed as a strain sensor in the range of 3.1-61.5%, displayed a gauge factor (GF) of 45.45 and a response time of 0.1 s. The wearable sensor was capable of detecting minute changes in hand gestures by recognizing the microstrains applied to the device. The sensing mechanism can be attributed to the excellent piezoelectric property of β- phase PVDF, electron transport property of PPy nanoparticles and tensile strength of the BS nanoparticles embedded in the polymer matrix. When used as a wearable temperature sensor, the versatile device demonstrated a linear range of detection 24- 48 °C with a response time of 0.33 s and Temperature coefficient of resistance (TCR) of -0.1117 °C-1 that can be attributed to the phonon-assisted hoping mechanism. The nanofiber composite dissolved in volatile organic solvent acetone in 5 days with the least impact on the surrounding environment thus making this a promising strategy to develop transient technologies aimed at zero-waste, green electronics.

Manufacturers of photovoltaic cells and modules usually provide temperature coefficients referring to the short–circuit current, the open–circuit voltage and the maximum power. Few studies analyse the variation of the series resistance with respect to the cell or module temperature. In this paper, this dependency is studied by suitably processing a set of current–voltage curves acquired on several modules working under outdoor conditions. The curves are measured at an increasing module temperature. The temperature coefficient of the series resistance is estimated by using the single diode model and the double diode one. Some hundreds of current vs voltage curves referring to degraded photovoltaic modules are used in this paper to analyse the effects of the degradation on the series resistance and on the temperature coefficient thereof.

Mn1.5Co1Ni0.5O4 (MCN) bulk sensors and ceramic targets were prepared via the solid-state reaction method. MCN functional thin-film and Au electrode thin-film layers were fabricated on polished alumina substrates by employing a series of semiconductor processes; these involved physical vapour deposition, photolithography, and wet etching. The X-ray diffraction (XRD) patterns of the MCN thin film exhibit MCN spinel-structure peaks on the alumina substrate. Negative temperature coefficient temperature and resistance relationships of the bulk and thin-film thermistors were elucidated by measuring the resistance of thermistors in thermostatic oil both the resistance of the bulk sensor at 25 °C was measured to be 2077 Ω, while the thin-film sensor recorded resistance values exceeding 300 kΩ. The activation energy and B value of the thin-film sensor were slightly lower than those for the bulk sensors. The thermal response time constant of the bulk sensor was 5.13 s; meanwhile, for the thin film sensors, the time constants were 0.43 s, 0.46 s and 0.53 s, corresponding to the thicknesses of 528, 610 and 677 nm, respectively.

ISFET chemical sensors offer innovative solutions for the detection of chemical species by optimizing the ionosensitive membrane or layer between the aqueous medium and the insulation. As a result, the information provided by the sensor is no longer reliable. This is a major problem, as operators are often required to take measurements in an environment with higher or lower temperatures. The study of the effect of temperature on the detection parameters of the sensor, which are the surface potential, linearity and sensitivity, seems essential. The mathematical model presented in this article describes the physicochemical and thermal behavior of the sensor. First, it allows a series of simulations to be carried out on the variation in sensitivity, potential, and linearity with respect to the variation in pH. The second part of this work concerns the influence of temperature on the behavior of the sensor. Hence the determination of the temperature coefficient of the sensitivity, which is an indication of the performance of the sensor. It is also noted that the nature of the membranes of the sensors (Si3N4, Al2O3, SnO2) influences the temperature coefficient.

A strain-insensitive wearable temperature sensor based on graphene fibers is proposed to solve the temperature measurement strain interference of wearable temperature sensors. The stress, strain, and conduction characteristics of the sensor are discussed based on finite element simulations and the principle of graphene conduction. The wearable temperature sensor showed excellent negative temperature coefficient characteristics. The responsivity of the sensor is 0.85% °C−1, and the sensing resolution is 0.1 °C. The sensor shows good antiinterference below a tensile strain of 90% or a curved surface with a curvature of 0.5. When the sensor is attached to the human body, it reliably detects skin temperature changes at different curved surfaces.

We report the implementation of a passive temperature compensation technique in thermally actuated, silicon-based, resonant cantilever gas sensors vibrating in their fundamental in-plane resonant mode. The temperature compensation technique utilizes oxide-filled trenches along the edges of the cantilever structure and adds a single additional mask to the overall fabrication process. The trench width for effective temperature compensation was optimized using finite element simulation. The fabricated resonators exhibit a temperature coefficient of frequency (TCF) as low as 1.7 ppm/°C, which represents a 15x improvement compared to the same resonators without oxide trenches. Quality factors of devices with oxide compensation are similar to those measured in non-compensated counterparts. The temperature compensation technique addresses a key limitation of silicon-based, mass-sensitive chemical microsensors, namely their temperature instability due to inherent temperature-dependent material properties. Compared to our previous work, the improved frequency and baseline stability yields an almost order-of-magnitude improvement in the extrapolated limit of detection, approaching 100 ppb for toluene. [2020-0154]

peer-reviewed A disruptive method of fabricating free-standing tapes of La-doped (BaCaSrPb)TiO3 thermistors is demonstrated. The greatest advantage is that the free-standing tapes do not require high temperature co-firing of electrodes or reduced environment cofiring soft oxidation cycle to obtain thermal sensitivity. The approach thus solves the longstanding problem with the ceramic thermistor technology that eluded its compatibility with surface mount technology (SMT) and miniaturization. Stencil printing is employed that can fabricate up to 500 µm thick tapes in a single step, saving huge cost and processing steps for application requiring thicker films. The pastes suitable for freestanding tapes are reported. The method provides a novel route to integrate PTC elements into the chips of passive components and would lead to a massive reduction in cold resistivity when developed in multilayer laminated stacks.

This brief presents a nano-ampere CMOS current reference (CCR) for low power application with a wide temperature range from −40°C to 120°C. The current reference is generated by the division of a temperature-independent voltage and resistance in a simple way. The low temperature-independent voltage is generated based on the threshold voltage difference between two same-type NMOS transistors with different channel lengths working in the subthreshold region, while the temperature-independent resistance is made up by two poly resistors, whose temperature coefficients are opposite. By designing a low voltage to allow for a small resistance, the CCR circuit takes a small chip area while generating nano-ampere current. The proposed CCR circuit was implemented in a standard 0.18- ${\mu }\text{m}$ CMOS process and its active area is 0.054 mm2. Among the measured 10 samples, the average output current is 11.6 nA and the average temperature coefficient is 169 ppm/°C.

In this paper, a novel non-bandgap CMOS voltage reference with sub one-volt power supply is proposed and simulated in 0.18 μm standard CMOS technology. Thermal voltage obtained from ∆VBE with positive and threshold voltage of a nMOS transistor with negative temperature coefficient are utilized to achieve a stable-temperature voltage reference. A current proportional-to- threshold voltage and a current proportional-to-absolute-temperature are used to produce positive and negative temperature coefficient parts. The reference voltage is obtained from the proper combination of these two parts. The nominal output voltage reference is about 0.5-V with the temperature coefficient of 36 ppm/ °C across a temperature range of 0–120 °C at 0.9-V of supply. The power supply noise attenuation of 84 dB is achieved without any filtering capacitor below 15 Hz at 1-V of Vdd.

In this paper, a structure for isolating packaging stress in a sandwich MEMS capacitive accelerometer is proposed and verified. The structure is designed and analyzed by finite element modeling (FEM) using ABAQUS. Two kinds of MEMS accelerometer, one with the stress isolation structure and the other without it, were simulated and compared. Simulation results show that the structure can reduce packaging stress and avoid uneven stress distribution. And then, MEMS accelerometers with and without the stress isolation structure are fabricated based on bulk micromachining technology and experimentally verified. The experimental results show that stabilities of the bias temperature coefficient and scale factor temperature coefficient of the MEMS accelerometer with the stress isolation structure are significantly improved. The comparison results demonstrate that the stress isolating structure is working and the packaging stress is successfully isolated.

In the present paper, structural, microstructural, dielectric, electrical, and magnetic characteristics of a chemically synthesized double perovskite compound BiMgFeCeO6 have been reported. An analysis of room temperature X-ray diffraction data has shown formation of compound with orthorhombic symmetry. Study of micrographs of the pellets has shown the homogeneous distribution of grains, grain boundaries, and presence of required elements in the sample. Detailed studies of dielectric (er, tan δ) and impedance parameters of the material have provided an insight into the electrical properties and understanding of types of relaxation process occurred in the material. The semiconductor characteristic (i.e., negative temperature coefficient of resistance behavior) of the compound at high temperature has been observed in the temperature-dependent dc conductivity study. As the characteristics of the frequency dependence of ac conductivity of the material follow Jonscher’s universal power law, the validity of analysis and good quality of the sample are confirmed. The occurrence of ferroelectric polarization (hysteresis loop), magnetization loop, and magnetoelectric pattern in the material confirms the multiferroicity in it.