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1. Frequency Changes in the Second Derivative of Currant — Voltage Characteristics of SnO2-Si the Heterostructures During Gas Adsorption for Different Thickness of the Adsorptive Layers

Author

A. M. Gaskov, V. T. Grinchenko, V. M. Telega, A. I. Kravchenko, V. V. Il’chenko, V. P. Chehun, and L. G. Il’chenko

Subjects
Resistive touchscreen, Silicon, Chemistry, business.industry, Analytical chemistry, Oxide, chemistry.chemical_element, Heterojunction, Hardware_PERFORMANCEANDRELIABILITY, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter::Materials Science, chemistry.chemical_compound, Transducer, Semiconductor, Adsorption, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, business, Voltage
Abstract

Heterostructures based on the nanometer-scaled semiconductor oxides can be used as gas-sensitive receptor and transducer systems. In comparison to resistive oxide sensors, having a linear current - voltage characteristics, the sensors based on the heterostructures show non-linear current - voltage characteristics. These structures, based on the industrially developed silicon technology, promise the new remarkable capabilities for the creation of the gas- and biosensitive sensors.

Published
2004

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