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Background The classification of benign and malignant microcalcification clusters (MCs) is an important task for computer-aided diagnosis (CAD) of digital breast tomosynthesis (DBT) images. Influenced by imaging method, DBT has the characteristic of anisotropic resolution, in which the resolution of intra-slice and inter-slice is quite different. In addition, the sharpness of MCs in different slices of DBT is quite different, among which the clearest slice is called focus slice. These characteristics limit the performance of CAD algorithms based on standard 3D convolution neural network (CNN). Methods To make full use of the characteristics of the DBT, we proposed a new ensemble CNN, which consists of the 2D ResNet34 and the anisotropic 3D ResNet to extract the 2D focus slice features and 3D contextual features of MCs, respectively. Moreover, the anisotropic 3D convolution is used to build 3D ResNet to avoid the influence of DBT anisotropy. Results The proposed method was evaluated on 495 MCs in DBT images of 275 patients, which are collected from our collaborative hospital. The area under the curve (AUC) of receiver operating characteristic (ROC) and accuracy of classifying benign and malignant MCs using decision-level ensemble strategy were 0.8837 and 82.00%, which were significantly higher than the experimental results of 2D ResNet34 (AUC: 0.8264, ACC: 76.00%) and anisotropic 3D ResNet (AUC: 0.8455, ACC: 76.00%). Compared with the results of 3D features classification in the radiomics, the AUC of the deep learning method with decision-level ensemble strategy was improved by 0.0435, and the F1 score was improved from 79.37 to 85.71%. More importantly, the sensitivity increased from 78.13 to 84.38%, and the specificity increased from 66.67 to 77.78%, which effectively reduced the false positives of diagnosis Conclusion The results fully prove that the ensemble CNN can effectively integrate 2D features and 3D features, improve the classification performance of benign and malignant MCs in DBT, and reduce the false positives.

Hybrid organolead halide perovskites have attracted tremendous attention due to their recent success as high efficiency solar cell materials and their fascinating material properties uniquely suitable for optoelectronic devices. However, the poor ambient and operational stability as well as the concern of lead toxicity greatly hamper their practical utilization. In this work, crystalline, all-inorganic and lead-free Cs3Sb2I9 perovskite microplates are successfully synthesized by a two-step chemical vapor deposition method. As compared with other typical lead-free perovskite materials, the Cs3Sb2I9 microplates demonstrate excellent optoelectronic properties, including substantial enhancements in the Stokes shift, exciton binding energy and electron-phonon coupling. Simple photoconductive devices fabricated using these microplates exhibit an ultra-fast response with the rise and decay time constants down to 96 and 58 µs, respectively. This respectable photoconductor performance can be regarded as a record among all the lead-free perovskite materials. Importantly, these photodetectors show superior thermal stability in a wide temperature range, capable to function reversibly between 80 and 380 K, indicating their robustness to operate under both low and high temperatures. All these results evidently suggest the technological potential of inorganic lead-free Cs3Sb2I9 perovskite microplates for next-generation high-performance optoelectronic devices.

Due to the enhanced ambient structural stability and excellent optoelectronic properties, all-inorganic metal halide perovskite nanowires have become one of the most attractive candidates for flexible electronics, photovoltaics and optoelectronics. Their elastic property and mechanical robustness become the key factors for device applications under realistic service conditions with various mechanical loadings. Here, we demonstrate that high tensile elastic strain (∼ 4% to ∼ 5.1%) can be achieved in vapor-liquid-solid-grown single-crystalline CsPbBr3 nanowires through in situ scanning electron microscope (SEM) buckling experiments. Such high flexural elasticity can be attributed to the structural defect-scarce, smooth surface, single-crystallinity and nanomechanical size effect of CsPbBr3 nanowires. The mechanical reliability of CsPbBr3 nanowire-based flexible photodetectors was examined by cyclic bending tests, with no noticeable performance deterioration observed after 5,000 cycles. The above results suggest great application potential for using all-inorganic perovskite nanowires in flexible electronics and energy harvesting systems.

Circulating factors associated with aging have been shown to be involved in the development of age-related chronic and acute brain diseases. Here, we aimed to investigate the roles and mechanisms of CCL12, a circulating factor that is highly expressed in the plasma of aged rodents after intracerebral hemorrhage (ICH) using parabiosis and ICH models. Neurological deficit score (NDS), mortality rate, brain water content (BWC), and levels of inflammatory factors were determined to assess the degree of ICH-induced brain injury. Peripheral inflammatory cell infiltration was examined using immunofluorescence and flow cytometry. After confirming that acute brain injury after ICH was aggravated with age, we found that brain and plasma CCL12 levels were markedly higher in old mice than in young mice after ICH, and that plasma CCL12 was able to enter the brain. Using CCL12-/- mice, we showed that the degree of damage in the brain-as determined by NDS, mortality rate, BWC, levels of inflammatory factors, and numbers of degenerative and apoptotic neural cells and surviving neurons was significantly attenuated compared to that observed in old wild-type (WT) mice. These effects were reversed in CCL12-treated old mice. The detrimental effects caused by CCL12 may involve its ability to recruit macrophages and T cells. Finally, the administration of an anti-CCL12 antibody markedly improved the outcomes of ICH mice. Our results are the first to indicate that elevated peripheral CCL12 levels in old mice aggravates ICH-induced brain injury by recruiting macrophages and T cells. Thus, CCL12 may be a new target for ICH treatment.

While halide perovskite electronics are rapidly developing, they are greatly limited by the inferior charge transport and poor stability. In this work, effective surface charge transfer doping of vapor-liquid-solid (VLS)-grown single-crystalline cesium lead bromide perovskite (CsPbBr3) nanowires (NWs) via molybdenum trioxide (MoO3) surface functionalization is achieved. Once fabricated into NW devices, due to the efficient interfacial charge transfer and reduced impurity scattering, a 15× increase in the field-effect hole mobility (μh) from 1.5 to 23.3 cm2/(V s) is accomplished after depositing the 10 nm thick MoO3 shell. This enhanced mobility is already better than any mobility value reported for perovskite field-effect transistors (FETs) to date. The photodetection performance of these CsPbBr3/MoO3 core-shell NWs is also investigated to yield a superior responsivity (R) up to 2.36 × 103 A/W and an external quantum efficiency (EQE) of over 5.48 × 105% toward the 532 nm regime. Importantly, the MoO3 shell can provide excellent surface passivation to the CsPbBr3 NW core that minimizes the diffusion of detrimental water and oxygen molecules, improving the air stability of CsPbBr3/MoO3 core-shell NW devices. All these findings evidently demonstrate the surface doping as an enabling technology to realize high-mobility and air-stable low-dimensional halide perovskite devices.

Quasi-2D halide perovskites, especially the Ruddlesden-Popper perovskites (RPPs), have attracted great attention because of their promising properties for optoelectronics; however, there are still serious drawbacks, such as inefficient charge transport, poor stability, and unsatisfactory mechanical flexibility, restricting further utilization in advanced technologies. Herein, high-quality quasi-2D halide perovskite thin films are successfully synthesized with the introduction of the unique bication ethylenediammonium (EDA) via a one-step spin-coating method. This bication EDA, with short alkyl chain length, can not only substitute the typically bulky and weakly van der Waals-interacted organic bilayer spacer cations forming the novel Dion-Jacobson phase to enhance the mechanical flexibility of the quasi-2D perovskite (e.g., EDA(MA)n-1PbnI3n+1; MA = CH3NH3+) but also serve as a normal cation to achieve the more intact films (e.g., (iBA)2(MA)3-2x(EDA)xPb4I13). When fabricated into photodetectors, these optimized EDA-based perovskites deliver an excellent responsivity of 125 mA/W and a fast response time down to 380 μs under 532 nm irradiation. More importantly, the device with the Dion-Jacobson phase perovskite can be bent down to a radius of 2 mm and processed with 10,000 cycles of the bending test without any noticeable performance degradation because of its superior structure to RPPs. Besides, these films do not exhibit any material deterioration after ambient storage for 30 days. All these performance parameters are already comparable or even better than those of the state-of-the-art RPPs recently reported. This work provides valuable design guidelines of the quasi-2D perovskites to obtain high-performance flexible photodetectors for next-generation optoelectronics.

Due to their unique properties, ZnO nanostructures have received considerable attention for application in electronics and optoelectronics; however, intrinsic ZnO nanomaterials usually suffer from large concentrations of lattice defects, such as oxygen vacancies, which restricts their material performance. Here, for the first time, highly-crystalline In and Ga co-doped ZnO nanowires (NWs) are achieved by ambient-pressure chemical vapor deposition. In contrast to conventional elemental doping, this In and Ga co-doping can not only enhance the carrier concentration, but also suppresses the formation of oxygen vacancies within the host lattice of ZnO NWs. Importantly, this co-doping is also believed to effectively minimize the generation of lattice strain defects due to the optimal ionic sizes of both In and Ga dopants. When configured into field-effect transistors (FETs), these co-doped NWs exhibit an enhanced average electron mobility of 315 cm2 V-1 s-1 and an impressive on/off current ratio of 1.87 × 108, which are already higher than those of other previously reported ZnO NW devices. In addition, these NW devices demonstrate efficient ultraviolet photodetection at under 261 nm irradiation with an improved responsivity of 1.41 × 107 A W-1, an excellent EQE of up to 6.72 × 109 and a fast response time down to 0.32 s. Highly-ordered NW parallel array thin-film transistors and photodetectors are also constructed to demonstrate the promising potential of the NWs for high-performance device applications.

Due to the excellent electrical and optical properties, small bandgap III–V nanowire (NW) materials hold great promise for future electronics and optoelectronics. In particular, InAs1−xSbx, the ternary alloy of InAs and InSb, is one of the most studied III–V nanomaterial systems; however, the As-rich InAs1−xSbx NWs are usually obtained with significant crystal phase mixing and high density of planar defects, limiting their electrical transport characteristics. In this work, unusual phase-pure zinc blende and highly-crystalline As-rich InAs1−xSbx NWs with x < 0.2 are successfully achieved using solid-source chemical vapor deposition, and this excellent phase-purity and crystallinity has not been reported elsewhere. By simply controlling the precursor powder mixing ratio between InAs and InSb, the morphology and composition of NWs can be controlled reliably. When these InAs1−xSbx NWs are fabricated into field-effect transistors, they exhibit a superior device performance, especially a high electron mobility. Specifically, the average peak mobility of the InAs0.948Sb0.052 NW device can be improved up to 3160 cm2 V−1 s−1, which is substantially better than that of the pure InAs NW counterparts (2030 cm2 V−1 s−1). This mobility enhancement can be attributed to the Sb-alloyed-induced electron effective mass reduction. Also, there exists a surface charge accumulation layer on the NWs as confirmed by the decrease of device transconductance measured under vacuum, indicating future possibilities to manipulate the NW surface for enhanced functionality. All these results evidently indicate the potential of these phase-pure zinc blende As-rich InAs1−xSbx NWs for high-mobility devices.

In this letter, high-performance thin-film transistors (TFTs), with indium oxide (In2O3) as front channel layer, high permittivity ZrO2 as dielectric layer, and aluminum oxide (Al2O3) as passivation layers were integrated by a fully solution process. It is found that the incorporation of Al2O3 passivation layer gives rise to a sharp decrease in the off current (Ioff) and a corresponding increase in the on/off current ratio ( $\text{I}_{\text {on}}$ /Ioff) of the TFTs, compared to that without Al2O3 passivation. Furthermore, the thickness effect of the passivation layer on the performance of In2O3 /ZrO2 TFTs has been investigated systematically. The In2O3 /ZrO2 TFTs with optimized Al2O3 passivation layers can be operated at 3 V with high performance, including a high field-effect mobility of 21.22 cm2 /V s, a large $\text{I}_{\text {on}}$ /I off of 107 and a negligible hysteresis (~0V). This work demonstrates an effective strategy for the construction of high performance TFTs by incorporating the passivation layer.

Background Vertigo and dizziness (VD) are among the most frequently seen symptoms in clinics and are important for medical students, especially for those in Chinese standardized residency training (SRT). The aim of our study was to examine the PAL method’s feasibility in the clinical teaching of VD-related diseases for SRT students in China. Methods This is a randomized, controlled, multicenter study. A total of 228 residents were invited to participate in this study, of which 198 completed the program. The students were randomized into two groups, and VD-related diseases were taught using lecture-based learning (control group) or peer-assisted learning (PAL). An examination paper and a rating scale were used to evaluate students’ performance in the mastery of VD-related theoretical knowledge and clinical skills, meanwhile students’ perceptions, satisfaction, and risk of burnout were also analyzed using a questionnaire. Independent-samples t-test and chi-square analysis were performed to evaluate statistical significance for continuous variables and categorical variables, respectively, using SPSS 18.0 software. Results The PAL group performed better in mastering theoretical knowledge and clinical skills than the control group. And more students believed that PAL could help improve their personal qualities such as teamwork skills. However, more students reported that PAL increased the risk of burnout. Conclusions PAL was a suitable and effective method in the clinical teaching of some specialized diseases, especially it was recommended for students who had gained initial knowledge and skills, such as Chinese SRT students. However, we should draw attention to the increased risk of burnout if PAL is intended to be widely used in clinical teaching. Trial registration ISRCTN registry, ISRCTN53773239, 05/07/2021, retrospectively registered.

BackgroundImmune checkpoint inhibitors (ICIs) have dramatically altered the treatment landscape for patients with melanoma. However, their use also generates unique immune-related adverse effects (irAEs). We performed a systematic review and network meta‐analysis to compare the risk of pneumonitis associated with ICIs for patients with advanced or metastatic melanoma.MethodsPhase II/III randomized clinical trials (RCTs) with ICIs were identified through comprehensive searches of multiple databases. An NMA was conducted to compare the risk of pneumonitis associated with ICIs and all‐grade (grade 1‐5) and high‐grade (grade 3‐5) immune‐related pneumonitis (IRP) were estimated by odds ratios (ORs).ResultsA total of 10 randomized clinical trials involving 5,335 patients were enrolled in this study. Conventional chemotherapy was associated with a lower risk of grade 1–5 IRP compared with ICIs monotherapy (OR, 0.14, 95% CI, 0.03 to 0.73) and dual ICIs combination (OR, 0.03, 95% CI, 0.00 to 0.19). In addition, dual ICIs combination showed a noticeably higher risk than ICI monotherapy (OR, 4.45, 95% CI, 2.14 to 9.25) of grade 1–5 IRP. No significant difference in grade 1–5 IRP was observed between cytotoxic T lymphocyte-associated protein 4 (CTLA-4) and programmed cell death protein 1 (PD-1) inhibitors. As to grade 3‐5 IRP, no statistically significant difference was found among different ICIs-based regimens.ConclusionThese findings revealed that ICIs could increase the risk of all-grade pneumonitis for patients with advanced melanoma, compared with conventional chemotherapy. Dual ICIs combination could further increase the risk of all-grade pneumonitis than ICIs monotherapy. There was no significant difference in the risk of pneumonia between CTLA-4 and PD-1 inhibitors.

Due to the efficient photocarrier separation and collection coming from their distinctive band structures, superlattice nanowires (NWs) have great potential as active materials for high-performance optoelectronic devices. In this work, InGaZnO NWs with superlattice structure and controllable stoichiometry are obtained by ambient-pressure chemical vapor deposition. Along the NW axial direction, perfect alternately stacking of InGaO(ZnO)

Neoadjuvant chemoradiotherapy (nCRT) has been widely applied to improve the local control rate and survival rate in patients with locally advanced rectal cancer (LARC), yet only part of LARC patients would benefit from nCRT. Therefore, it is imperative to predict the therapeutic outcome of nCRT. Here, we showed that RAD18, an E3 ubiquitin‐linked enzyme, played a fundamental role in predicting the response of LARC patients to nCRT. According to clinical data, patients with low RAD18 expression level in their pre‐nCRT biopsies had a superior response to nCRT compared to those with high RAD18 expression. Inhibition of RAD18 expression in rectal cancer cells pronouncedly attenuated the proliferation and promoted apoptosis after exposing to irradiation or/and 5‐fluorouracil (5‐Fu). Downregulated RAD18 levels increased cell apoptosis by activating caspase‐9‐caspase‐3‐mediated apoptotic pathway, thus resulting in the enhancement of cell radiosensitivity and 5‐Fu susceptibility. Furthermore, a xenograft nude mouse model showed that silencing RAD18 significantly slowed tumor growth after irradiation or/and 5‐Fu in vivo. Collectively, these results implied that RAD18 could be a new biomarker to predict LARC patients who might benefit from nCRT and provide new strategies for clinical treatment of LARC.

Amorphous indium—gallium—zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications; however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn24O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm2·V−1·s−1 and on/off current ratio of ~ 106. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies.

Group III oxides, such as In2O3 and Ga2O3, have proved to be good candidates as active materials for novel electronic devices, including high-mobility transistors, gas sensors, and UV photodetectors. The ability to tune optical and electronic properties is provided by alloying In2 xGa2-2 xO3 (InGaO) in a broad compositional range. Further development of InGaO compounds in the form of nanowires (NWs) would overcome the technological limitations, such as the substrate crystal lattice mismatch and the inability to fabricate high quality structures above the critical thickness. In this work, optical properties of alloyed InGaO NWs in a wide compositional range are carefully assessed. Unlike classical optical characterization methods, photoacoustic spectroscopy reveals the fundamental absorption edge despite the strong light scattering in porous and randomly oriented nanowires structure. An unusual compositional band gap dependence is also observed, giving insight into the phase segregation effect and increased quality of mixed NWs. In addition, photoacoustic measurements disclose potential applications of InGaO NWs in remote, light-driven loudspeakers because of intense photoacoustic effect in nanowire ensembles in this material system.

Recently, p-type metal–oxide–semiconductors have attracted considerable interests for the applications in optoelectronic devices and low-power complementary metal–oxide–semiconductor circuits. In this report, ternary p-type CuAlxOy semiconductor thin films were fabricated by sol–gel method and integrated as channel layers in thin-film transistors (TFTs). The electrical performances of CuAlxOy TFTs, together with the characteristics of CuAlxOy thin films (e.g., crystalline phases, chemical compositions, surface morphology, and optical transmittances), were systematically studied at various annealing temperatures ( ${T}_{a}$ ). The phase-pure CuAlO2 thin films were obtained at ${T}_{a}$ above 800° C in N2 atmosphere. CuAlO2 TFTs annealed at 900 ° C based on high-k Al2O3 exhibited optimized electrical performance, including a hole mobility of 1.36 cm2/Vs and on/off current ratio of $\sim 1 \times 10^{\textsf {5}}$ . This paper not only demonstrates the successful fabrication of high-quality p-type CuAlO2 semiconductor thin film and electronic devices by sol–gel process but also provides guidelines for related ternary p-type oxide semiconductor material and device performance improvements.

Because of the excellent electrical properties, III-V semiconductor nanowires are promising building blocks for next-generation electronics; however, their rich surface states inevitably contribute large amounts of charge traps, leading to gate bias stress instability and hysteresis characteristics in nanowire field-effect transistors (FETs). Here, we investigated thoroughly the gate bias stress and hysteresis effects in InAs nanowire FETs. It is observed that the output current decreases together with the threshold voltage shifting to the positive direction when a positive gate bias stress is applied, and vice versa for the negative gate bias stress. For double-sweep transfer characteristics, the significant hysteresis behavior is observed, depending heavily on the sweeping rate and range. On the basis of complementary investigations of these devices, charge traps are confirmed to be the dominant factor for these instability effects. Importantly, the hysteresis can be simulated well by utilizing a combination of the rate equation for electron density and the empirical model for electron mobility. This provides an accurate evaluation of carrier mobility, which is in distinct contrast to the overestimation of mobility when using the transconductance for calculation. All these findings are important for understanding the charge trap dynamics to further enhance the device performance of nanowire FETs.

Background: Immune checkpoint inhibitors (ICIs) have transformed the treatment landscape among non-small-cell lung cancer (NSCLC) patients. The efficacy of ICI therapy in older patients (≥65 years) is controversial and not fully clarified. We performed a systematic review and meta-analysis to evaluate the efficacy of ICIs in patients with advanced or metastatic NSCLC based on age (

Neurons in the penumbra (the area surrounding ischemic tissue that consists of still viable tissue but with reduced blood flow and oxygen transport) may be rescued following stroke if adequate perfusion is restored in time. It has been speculated that post-stroke angiogenesis in the penumbra can reduce damage caused by ischemia. However, the mechanism for neovasculature formation in the brain remains unclear and vascular-targeted therapies for brain ischemia remain suboptimal. Here, we show that VEGFR1 was highly upregulated in pericytes after stroke. Knockdown of VEGFR1 in pericytes led to increased infarct area and compromised post-ischemia vessel formation. Furthermore, in vitro studies confirmed a critical role for pericyte-derived VEGFR1 in both endothelial tube formation and pericyte migration. Interestingly, our results show that pericyte-derived VEGFR1 has opposite effects on Akt activity in endothelial cells and pericytes. Collectively, these results indicate that pericyte-specific expression of VEGFR1 modulates ischemia-induced vessel formation and vascular integrity in the brain.

Background. Enhanced recovery after surgery (ERAS) is a multimodal, multidisciplinary, evidence-based approach to care for surgical patients and aims at optimizing the perioperative management and outcomes. The ERAS approach was first implemented in colorectal surgery patients; however, the reported applications in pancreatoduodenectomy patients are limited. In recent years, studies on ERAS for patients undergoing pancreaticoduodenectomy have been published. The accumulation of new randomized controlled trials and high-quality case-control studies stimulated us to update the analysis. Our study comprehensively collected data to provide the best evidence summary for the clinic. Aim. To evaluate the safety and feasibility of enhanced recovery after surgery in the perioperative management of pancreatoduodenectomy patients. Methods. A systematic literature search of PubMed, Embase, and the Cochrane Library was performed up to July 2019. All randomized controlled trials and case-control studies that applied ERAS for patients undergoing pancreaticoduodenectomy were considered for inclusion in this study. The patients were divided into two groups: patients who received the ERAS perioperative management approach were defined as the ERAS group and patients who received the traditional perioperative management approach were defined as the control group. All statistical analyses were conducted using the Revman5.3 software, and the outcomes were calculated as odds ratios or weighted mean differences with their corresponding 95% confidence intervals. A funnel plot was created to assess publication bias. Subgroup and sensitivity analyses were performed to explore the sources of heterogeneity. Results. A total of 20 studies involving 3613 patients (1914 patients in the ERAS group vs. 1699 patients in the control group) were included in this study. Among the 20 studies, 4 were randomized controlled trials, and 16 were case-control studies. The overall postoperative complication rate was significantly lower in the ERAS group (OR=0.62, 95% CI: 0.53-0.74, P<0.00001) than in the control group. In addition, the minor complication rate (Clavien-Dindo I-II) was also lower in the ERAS group (OR=0.70, 95% CI: 0.58-0.86, P=0.0005). The patients in the ERAS group had a lower incidence of delayed gastric emptying (OR=0.51, 95% CI: 0.42-0.63, P<0.00001) and shorter length of hospital stay (WMD=−4.27, 95% CI: -4.81~-3.73, P<0.00001) than in the control group. The rates of pancreatic fistula (regardless of Grade A/B/C), wound infections, abdominal abscesses, readmission, reoperation, and morbidity were not significantly different between the two groups. Conclusion. The ERAS approach is safe and effective in the perioperative management of patients undergoing pancreaticoduodenectomy and helps to accelerate the postoperative recovery and improve prognosis.

The gallop of artificial intelligence ignites urgent demand on information processing systems with ultralow power consumption, reliable multi-parameter control and high operation efficiency. Here, the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) wrapped InGaAs nanowire (NW) artificial synapses capable to operate with record-low subfemtojoule power consumption are presented. The essential synaptic behaviors are mimicked and modulated effectively by adjusting the thickness of top modulation gate P(VDF-TrFE) films. Moreover, the long-term depression is realized by applying visible light (450 nm) because of the negative photoconductivity of InGaAs nanowires. Combined with optimal P(VDF-TrFE) films, the synaptic devices have the more linear long-term potentiation/depression characteristics and the faster supervised learning process simulated by hardware neural networks. The Pavlovian conditioning is also performed by combining electrical and infrared stimuli. Evidently, these ultralow-operating-power synapses are demonstrated with the brain-like behaviors, effective function modulation, and more importantly, the synergistic photoelectric modulation, which illustrates the promising potentials for neuromorphic computing systems.

Although In2O3 nanofibers (NFs) are well-known candidates as active materials for next-generation, low-cost electronics, these NF based devices still suffer from high leakage current, insufficient on–off current ratios (Ion/Ioff), and large, negative threshold voltages (VTH), leading to poor device performance, parasitic energy consumption, and rather complicated circuit design. Here, instead of the conventional surface modification of In2O3 NFs, we present a one-step electrospinning process (i.e., without hot-press) to obtain controllable Mg-doped In2O3 NF networks to achieve high-performance enhancement-mode thin-film transistors (TFTs). By simply adjusting the Mg doping concentration, the device performance can be manipulated precisely. For the optimal doping concentration of 2 mol%, the devices exhibit a small VTH (3.2 V), high saturation current (1.1 × 10–4 A), large on/off current ratio (>108), and respectable peak carrier mobility (2.04 cm2/(V·s)), corresponding to one of the best device performances among all 1D metal-oxide NFs based devices reported so far. When high-κ HfOx thin films are employed as the gate dielectric, their electron mobility and VTH can be further improved to 5.30 cm2/(V·s) and 0.9 V, respectively, which demonstrates the promising prospect of these Mg-doped In2O3 NF networks for highperformance, large-scale, and low-power electronics.

In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin coating and integrated as channel layers in thin-film transistors (TFTs). The structural, morphological components, and optical properties of CuCrxOy thin films, together with device performance, were systematically investigated. The phase conversion from a mixture of CuCr2O4 and CuO to pure CuCrO2 was achieved when the annealing temperature (Ta) was higher than 700 °C. The electrical performance of the CuCrxOy TFTs on SiO2 dielectric is improved with increasing Ta from 500 °C to 800 °C. The optimized CuCrO2 TFT exhibits an on/off current ratio of ∼105 and a hole mobility of 0.59 cm2 V−1 s−1, which is much better than those previous works on solution-processed binary CuxO TFTs. To our best knowledge, this work demonstrates the ternary p-type CuCrO2 TFTs fabricated via a low-cost solution process for the first time, which represents an important advancement towards the development of all-oxide, low-cost p–n junctions and CMOS logic circuits.

One-dimensional (1D) nanofibers have been considered to be important building blocks for nano-electronics due to their superior physical and chemical properties. In this report, high-performance zinc tin oxide (ZnSnO) nanofibers with various composition ratios were prepared by electrospinning. The surface morphology, crystallinity, grain size distribution, and chemical composition of the nanofibers were investigated. Meanwhile, field-effect transistors (FETs) based on ZnSnO nanofiber networks (NFNs) with various composition ratios were integrated and investigated. For optimized Zn0.3Sn0.7O NFNs FETs, the device based on an SiO2 dielectric exhibited a high electrical performance, including a high on/off current ratio (Ion/off) of 2 × 107 and a field-effect mobility (μFE) of 0.17 cm2 V-1 s-1. When a high-permittivity (κ) ZrOx thin film was employed as the dielectric in Zn0.3Sn0.7O NFNs FETs, the operating voltage was substantially reduced and a high μFE of 7.8 cm2 V-1 s-1 was achieved. These results indicate that the Zn0.3Sn0.7O NFNs/ZrOx FETs exhibit great potency in low-cost and low-voltage devices.

High permittivity (high k) metal-oxide thin films fabricated via solution processes have recently received much attention for the construction of low-operating voltage and high-performance thin-film transistors (TFTs). In this report, amorphous ytterbium oxide (Yb2O3) thin films were fabricated by spin coating and their applications in TFTs were explored. The physical properties of the solution-processed Yb2O3 thin films processed at different annealing temperatures were systematically investigated using various characterization techniques. To explore the feasibility of the Yb2O3 thin films as gate dielectrics for oxide TFTs, In2O3 TFTs based on Yb2O3 dielectrics were integrated. All the devices could be operated at 3 V, which is critical for the applications in portable, battery-driven, and low-power electronic devices. The optimized In2O3/Yb2O3 TFT exhibits high electrical performances, including field-effect mobility of 4.98 cm2/V s, on/off current ratio of ~ 106, turn-on voltage around 0 V, and subthreshold swing of 70 mV/decade, respectively. To demonstrate the potential of In2O3/Yb2O3 TFT toward more complex logic application, the unipolar inverter was further constructed.

In this paper, high-k strontium oxide (SrOx) dielectric thin films were fabricated using simple and low-cost solution process. The formation and properties of SrOx thin films annealed at various temperatures (400 °C, 500 °C, 600 °C, and 700 °C) were investigated using numbers of characterization techniques. The electrical analysis indicates that the insulating properties of SrOx thin films were improved with increasing annealing temperature. The post-annealing at temperatures higher than 400 °C enables the SrOx thin film, exhibiting low-leakage current density of ~10−8 A cm−2 at 3 V and the areal capacitance larger than 350 nF cm−2 at 20 Hz. To further explore the possible applications of solution-processed high-k SrOx thin films for thin-film transistors (TFTs), the indium oxide (In2O3) TFTs based on SrOx thin films were integrated for testing. The optimized In2O3/SrOx TFT exhibits high performance with an average field-effect mobility of 5.61 cm2 V−1 s−1, a small subthreshold swing of 110 mV dec−1, and a large on/off current ratio of 107. To demonstrate the potential of In2O3/SrOx TFT toward more complex logic applications, the unipolar inverter was further constructed and exhibited a high gain of 9.7. Importantly, all these device parameters were obtained at an ultralow operating voltage of 3 V, which represents a step toward portable, battery-driven, and low-power consumption electronics and circuits.

One-dimensional metal-oxide nanowires are regarded as important building blocks in nanoscale electronics, because of their unique mechanical and electrical properties. In this work, p-type nickel oxide nanowires (NiO NWs) were fabricated by combining sol-gel and electrospinning processes. The poly(vinylpyrrolidone) (PVP) with a molecular weight of 1 300 000 was used as the polymer matrix to increase the viscosity of a NiO precursor solution. The formation and properties of the as-spun NiO/PVP composite NWs before/after calcination treatment were investigated using various techniques. Because of the enhanced adhesion properties between ultraviolet (UV)-treated NiO NWs and the substrate, the field-effect transistors (FETs) based on NiO NWs were found to exhibit satisfying p-channel behaviors. For the fabrication of aligned NiO NW arrays, two parallel conducting Si strips were grounded as NW collector. The integrated FETs based on aligned NiO NWs were demonstrated to exhibit superior electrical performance, compared to the disordered counterparts with the comparable NW coverage. By employing high- k aluminum oxide (Al

// Li-Rong Wu 1 , Liang Liu 1 , Xiao-Yi Xiong 1 , Qin Zhang 1 , Fa-Xiang Wang 1 , Chang-Xiong Gong 1 , Qi Zhong 1 , Yuan-Rui Yang 1 , Zhao-You Meng 1 and Qing-Wu Yang 1 1 Department of Neurology, Xinqiao Hospital, The Third Military Medical University, Shapingba, Chongqing, China Correspondence to: Qing-Wu Yang, email: // Keywords : vinpocetine, cerebral ischemia/reperfusion, toll-like receptor 4, ischemic stroke, middle cerebral artery occlusion Received : May 19, 2017 Accepted : July 29, 2017 Published : September 07, 2017 Abstract Inflammatory responses play crucial roles in cerebral ischemia/reperfusion injury. Toll-like receptor 4 (TLR4) is an important mediator of the neuroinflammatory response to cerebral ischemia/reperfusion injury. Vinpocetine is a derivative of the alkaloid vincamine and exerts an anti-inflammatory effect by inhibiting NF-κB activation. However, the effects of vinpocetine on pathways upstream of NF-κB signaling, such as TLR4, have not been fully elucidated. Here, we used mouse middle cerebral artery occlusion (MCAO) and cell-based oxygen-glucose deprivation (OGD) models to evaluate the therapeutic effects and mechanisms of vinpocetine treatment. The vinpocetine treatment significantly reduced mice cerebral infarct volumes and neurological scores. Moreover, the numbers of TUNEL+ and Fluoro-Jade B+ cells were significantly decreased in the ischemic brain tissues after vinpocetine treatment. In the OGD model, the vinpocetine treatment also increased the viability of cultured cortical neurons. Interestingly, vinpocetine exerted a neuroprotective effect on the mouse MCAO model and cell-based OGD model by inhibiting TLR4-mediated inflammatory responses and decreasing proinflammatory cytokine release through the MyD88-dependent signaling pathway, independent of TRIF signaling pathway. In conclusion, vinpocetine exerts anti-inflammatory effects to ameliorate cerebral ischemia/reperfusion injury in vitro and in vivo. Vinpocetine may inhibit inflammatory responses through the TLR4/MyD88/NF-κB signaling pathway, independent of TRIF-mediated inflammatory responses. Thus, vinpocetine may be an attractive therapeutic candidate for the treatment of ischemic cerebral injury or other inflammatory diseases.

Electrospun metal oxide nanofibers have been regarded as promising blocks for large-area, low-cost, and one-dimensional electronic devices. However, the electronic devices based on electrospun nanofibers usually suffer from poor performance and inferior viability. Here, we report an efficient photochemical process using UV light generated by a high-pressure mercury lamp to promote the electrical performance of the nanofiber-based electronic devices. Such UV treatment can lead to strong photochemical activation of electrospun nanofibers, and therefore, a stable adherent nanofiber network and electronic-clean interface were formed. By use of UV treatment, high-performance indium oxide (In2O3) nanofiber based field-effect transistors (FETs) with highly efficient modulation of electrical characteristics have been successfully fabricated. To reduce the operating voltage and further improve the device performance, the In2O3 nanofiber FETs based on solution-processed high-k AlOx dielectrics were integrated and i...

Reducing excessive inflammation is beneficial for the recovery from intracerebral hemorrhage (ICH). Here, the roles and mechanisms of A20 (TNFAIP3), an important endogenous anti-inflammatory factor, are examined in ICH. A20 expression in the PBMCs of ICH patients and an ICH mouse model was detected, and the correlation between A20 expression and neurologic deficits was analyzed. A20 expression was increased in PBMCs and was negatively related to the modified Rankin Scale score. A20 expression was also increased in mouse perihematomal tissues. A20−/− and A20-overexpressing mice were generated to further analyze A20 function. Compared with wild-type (WT) mice, A20−/− and A20-overexpressing mice showed significant increases and decreases, respectively, in hematoma volume, neurologic deficit score, mortality, neuronal degeneration, and proinflammatory factors. Moreover, WT-A20−/− parabiosis was established to explore the role of A20 in peripheral blood in ICH injury. ICH-induced damage, including brain edema, neurologic deficit score, proinflammatory factors, and neuronal apoptosis, was reduced in A20−/− parabionts compared with A20−/− mice. Finally, the interactions between TRAF6 and Ubc13 and UbcH5c were increased in A20−/− mice compared with WT mice; the opposite occurred in A20-overexpressing mice. Enhanced IκBα degradation and NF-κB activation were observed in A20−/− mice, but the results were reversed in A20-overexpressing mice. These results suggested that A20 is involved in regulating ICH-induced inflammatory injury in both the central and peripheral system and that A20 reduces ICH-induced inflammation by regulating TRAF6 polyubiquitination. Targeting A20 may thus be a promising therapeutic strategy for ICH.

Although there are recent advances in many areas of quasi-2D halide perovskites, photodetectors based on these materials still cannot achieve satisfactory performance for practical applications where high responsivity, fast response, self-powered nature, and excellent mechanical flexibility are urgently desired. Herein, utilizing one-step spin-coating method, self-assemble quasi-2D perovskite films with graded phase distribution in the order of increasing number of metal halide octahedral layers are successfully prepared. Gradient type-II band alignments along the out-of-plane direction of perovskites with spontaneous separation of photo-generated electrons and holes are obtained and then employed to construct self-powered vertical-structure photodetectors for the first time. Without any driving voltage, the device exhibits impressive performance with the responsivity up to 444 mA W-1 and ultrashort response time down to 52 µs. With a bias voltage of 1.5 V, the device responsivity becomes 3463 mA W-1 with the response speed as fast as 24 µs. Importantly, the device's mechanical flexibility is greatly enhanced since the photocurrent prefers flowing through the metal halide octahedral layers between the top and bottom contact electrodes in the vertical device structure, being more tolerant to film damage. These results evidently indicate the potential of graded quasi-2D perovskite phases for next-generation optoelectronic devices.

Background: Disturbance of brain iron metabolism after intracerebral hemorrhage (ICH) results in oxidative brain injury and cognition impairment. Hepcidin plays an important role in regulating iron metabolism, and we have reported that serum hepcidin is positively correlated with poor outcomes in patients with ICH. However, the roles of hepcidin in brain iron metabolism after ICH remain largely unknown. Methods: Parabiosis and ICH models combined with in vivo and in vitro experiments were used to investigate the roles of hepcidin in brain iron metabolism after ICH. Results: Increased hepcidin-25 was found in serum and primarily in astrocytes after ICH. The brain iron efflux, oxidative brain injury, and cognition impairment were improved in Hepc −/− ICH mice but aggravated by the human hepcidin-25 peptide in C57BL/6 ICH mice. Data obtained in in vitro studies showed that increased hepcidin inhibited the intracellular iron efflux of brain microvascular endothelial cells but was rescued by a hepcidin antagonist, fursultiamine. Using parabiosis ICH models also shows that increased serum hepcidin prevents brain iron efflux. In addition, Toll-like receptor 4 (TLR4)/MyD88 signaling pathway increased hepcidin expression by promoting interleukin-6 expression and signal transducer and activator of transcription 3 phosphorylation. TLR4 −/− and MyD88 −/− mice exhibited improvement in brain iron efflux at 7, 14, and 28 days after ICH, and the TLR4 antagonist (6R)-6-[ N -(2-chloro-4-fluorophenyl) sulfamoyl] cyclohex-1-ene-1–carboxylate significantly decreased brain iron levels at days 14 and 28 after ICH and improved cognition impairment at day 28. Conclusions: The results presented here show that increased hepcidin expression caused by inflammation prevents brain iron efflux via inhibition of the intracellular iron efflux of brain microvascular endothelial cells entering into circulation and aggravating oxidative brain injury and cognition impairment, which identifies a mechanistic target for muting inflammation to promote brain iron efflux and to attenuate oxidative brain injury after ICH.

Background Carotid artery stenosis is a major risk factor for ischemic stroke. Although carotid angioplasty and stenting using an embolic protection device has been introduced as a less invasive carotid revascularization approach, in-stent restenosis limits its long-term efficacy and safety. The objective of this study was to test the anti-restenosis effects of local stent-mediated delivery of the A20 gene in a porcine carotid artery model.

Aim The purpose of this study was to explore the therapeutic efficacy of VEGF165-overexpressing vascular endothelial progenitor cells (EPCs) in post-thrombotic syndrome. Materials and methods A thrombus model was developed to mimic the in-vivo setting, and adenovirus transfection was used to overexpress VEGF165 in EPCs. These cells were transplanted into the animal model, and their ability to relieve endothelial injury was evaluated using haematoxylin and eosin staining, immunohistochemistry and scanning electron microscopy. Results Ferric chloride was used to build rat models of the inferior vena cava thrombosis, and HEK 293A cells were used to amplify adenovirus that overexpresses VEGF165. EPCs were infected with adenovirus, and this was confirmed by fluorescence microscopy. Transplantation of VEGH165-overexpressing EPCs into injured endothelial sites led to faster repair of the post-thrombotic tunica intima than wild-type EPCs. Conclusion Transplantation of VEGF165-overexpressing EPCs was found to promote repair of the tunica intima, thus improving rehabilitation after surgery.

The fabrication of water-induced amorphous high-k zirconium oxide (ZrOx) dielectrics has been proposed with the objective of achieving high performance and reducing costs for next generation displays. In this study, the as-prepared ZrOx thin films were fabricated by a sequential process, including a UV-assisted photochemical treatment and a thermal annealing process at temperatures lower than 300 °C. It is observed that the leakage current density of ZrOx thin films decreases, and the capacitance increases with increasing annealing temperatures. To verify the application possibilities of ZrOx thin films as gate dielectrics in complementary metal-oxide semiconductor (CMOS) electronics, both n-type In2O3 and p-type NiOx channel layers were integrated with ZrOx dielectrics and their corresponding electrical performances were examined. The In2O3/ZrOx thin film transistor (TFT) annealed at 250 °C exhibited a high electron mobility of 10.78 cm2 V−1 s−1, a small subthreshold swing of 75 mV dec−1, and a large on–off current ratio (Ion/Ioff) of around 106, respectively. Moreover, the p-type NiOx/ZrOx TFT exhibited an Ion/Ioff of 105 and a hole mobility of 4.8 cm2 V−1 s−1. It is noted that both n- and p-channel oxide TFTs on ZrOx could be operated at voltages lower than 4 V. The low-temperature fabrication process marks a great step towards the further development of low-cost, all-oxide CMOS electronics on flexible substrates.

Recently, semiconducting nanofiber networks (NFNs) have been considered as one of the most promising platforms for large-area and low-cost electronics applications. However, the high contact resistance among stacking nanofibers remained to be a major challenge, leading to poor device performance and parasitic energy consumption. In this report, a controllable welding technique for NFNs was successfully demonstrated via a bioinspired capillary-driven process. The interfiber connections were well-achieved via a cooperative concept, combining localized capillary condensation and curvature-induced surface diffusion. With the improvements of the interfiber connections, the welded NFNs exhibited enhanced mechanical property and high electrical performance. The field-effect transistors (FETs) based on the welded Hf-doped In2O3 (InHfO) NFNs were demonstrated for the first time. Meanwhile, the mechanisms involved in the grain-boundary modulation for polycrystalline metal-oxide nanofibers were discussed. When the high-k ZrO x dielectric thin films were integrated into the FETs, the field-effect mobility and operating voltage were further improved to be 25 cm2 V-1 s-1 and 3 V, respectively. This is one of the best device performances among the reported nanofibers-based FETs. These results demonstrated the potencies of the capillary-driven welding process and grain-boundary modulation mechanism for metal-oxide NFNs, which could be applicable for high-performance, large-scale, and low-power functional electronics.

To perform contrast analysis of the relationship between high-resolution computed tomography (HRCT) signs and new pathologic classification of small GGNs-like lung adenocarcinoma. The HRCT data from 145 pathologically confirmed cases of small GGNs of lung adenocarcinoma were analysed retrospectively. The 145 cases of GGNs were divided into pre-invasive (PI) group (n = 46), micro-invasive adenocarcinoma (MIA) group (n = 48), and invasive adenocarcinoma (IAC) group (n = 51). HRCT imaging sign of GGNs in each group was assessed and compared. Significant differences in GGN size were found among the three groups (P

Background Neural precursor cell ( NPC ) migration toward lesions is key for neurological functional recovery. The neovasculature plays an important role in guiding NPC migration. Micro RNA ‐210 (miR‐210) promotes angiogenesis and neurogenesis in the subventricular zone and hippocampus after cerebral ischemia; however, whether miR‐210 regulates NPC migration and the underlying mechanism is still unclear. This study investigated the role of miR‐210 in NPC migration. Methods and Results Neovascularization and NPC accumulation was detected around ischemic foci in a mouse model of middle cerebral artery occlusion ( MCAO ) and reperfusion. Bone marrow–derived endothelial progenitor cells ( EPC s) were found to participate in neovascularization. miR‐210 was markedly upregulated after focal cerebral ischemia/reperfusion. Overexpressed miR‐210 enhanced neovascularization and NPC accumulation around the ischemic lesion and vice versa, strongly suggesting that miR‐210 might be involved in neovascularization and NPC accumulation after focal cerebral ischemia/reperfusion. In vitro experiments were conducted to explore the underlying mechanism. The transwell assay showed that EPC s facilitated NPC migration, which was further promoted by miR‐210 overexpression in EPC s. In addition, miR‐210 facilitated VEGF ‐C (vascular endothelial growth factor C) expression both in vitro and in vivo. Moreover, the luciferase reporter assay demonstrated that miR‐210 directly targeted the 3′ untranslated region of SOCS1 (suppressor of cytokine signaling 1), and miR‐210 overexpression in HEK 293 cells or EPC s decreased SOCS 1 and increased STAT3 (signal transducer and activator of transcription 3) and VEGF‐C expression. When EPC s were simultaneously transfected with miR‐210 mimics and SOCS 1, the expression of STAT 3 and VEGF ‐C was reversed. Conclusions miR‐210 promoted neovascularization and NPC migration via the SOCS 1– STAT 3– VEGF ‐C pathway.

Technical development for thin-film fabrication is essential for emerging metal-oxide (MO) electronics. Although impressive progress has been achieved in fabricating MO thin films, the challenges still remain. Here, we report a versatile and general thermal-induced nanomelting technique for fabricating MO thin films from the fiber networks, briefly called fiber-to-film (FTF) process. The high quality of the FTF-processed MO thin films was confirmed by various investigations. The FTF process is generally applicable to numerous technologically relevant MO thin films, including semiconducting thin films (e.g., In2O3, InZnO, and InZrZnO), conducting thin films (e.g., InSnO), and insulating thin films (e.g., AlOx). By optimizing the fabrication process, In2O3/AlOx thin-film transistors (TFTs) were successfully integrated by fully FTF processes. High-performance TFT was achieved with an average mobility of ∼25 cm2/(Vs), an on/off current ratio of ∼107, a threshold voltage of ∼1 V, and a device yield of 100%. As...

In this work, we develop a simple and eco-friendly water-inducement method for high-k yttrium oxide (YOx) dielectric. To prepare YOx thin films at low temperature, yttrium nitrate and deionized water were used as the source materials. No toxic organic materials were required in the YOx coating process. The YOx thin film annealed at 350 � C showed a low leakage current density of 2 � 10 � 9 A/cm 2 at 5 MV/cm and a large areal-capacitance of 448 nF/cm 2 at 1 kHz. On the basis of its implementation as the gate dielectric, the fully-water-induced In2O3 TFT based on YOx exhibited a high field-effect mobility of 15.98 cm 2 /Vs, excellent subthreshold swing of 75 mV/dec, an on/off current ratio of 6 � 10 6 , and a negligible hysteresis of 50 mV. The as-fabricated TFT operated at a low voltage (~1.5 V) and showed high drain current drive capability, enabling oxide TFT with a water-induced high-k dielectric for use in backplane electronics for low-power mobile display applications.

Deep vein thrombosis (DVT) is a common complication of surgery. Endothelial progenitor cells (EPCs) are recruited into resolving venous thrombi. In this report, we investigated the effects of miR-126 on EPCs function and venous thrombus resolution. We demonstrated that overexpression of miR-126 enhanced EPCs' migration and tubulogenic activity in vitro, and promoted EPCs' homing and thrombus resolving in vivo. Moreover, we identified that miR-126 directly targeted PIK3R2 and affected PI3K/Akt signaling axis. Overall, our findings demonstrated that miR-126 promoted EPCs function through suppressing PIK3R2 expression and modulation of miR-126 may represent a potential therapeutic intervention for treating DVT. J. Cell. Biochem. 116: 1613–1623, 2015. © 2015 Wiley Periodicals, Inc.

This paper deals with the evaluation of the performances of InZnO thin-film transistor (TFT) using as dielectric an ultra-thin solution-processed ZrO $_{x}$ layer. The ZrO $_{x}$ thin film was formed using ultraviolet (UV) photo-annealing method and shows a low leakage-current density of 4 nA/cm $^{2}$ at 3.8 MV/cm and a large areal-capacitance of 775 nF/cm $^{2}$ at 50 Hz. The InZnO TFT incorporating the UV-treated ZrO $_{x}$ dielectric exhibits high stable and enhanced characteristics, an on/off current ratio of ${\hbox{10}}^{7}$ , a field-effect mobility of 14.7 cm $^{2}/{\hbox{V}}{\cdot}{\hbox{s}}$ , a subthreshold swing voltage of 100 mV/decade and a threshold voltage shift under bias stress, for 2 hours less than 0.1 V. All these performances are obtained at a low operation voltage of 2 V and make it suitable for use as a switching transistor in low-power electronics applications.

Background: Catheter-directed thrombolysis (CDT) has been a mainstay in treating deep venous thrombosis (DVT). However, the optimal dosage of a thrombolytic agent is still controversial. The goal of this study was to evaluate the safety and efficacy of low dosage urokinase with CDT for DVT. Methods: A retrospective analysis was performed using data from a total of 427 patients with DVT treated with CDT in our single center between July 2009 and December 2012. Early efficacy of thrombolysis was assessed with a thrombus score based on daily venography. The therapeutic safety was evaluated by adverse events. A venography or duplex ultrasound was performed to assess the outcome at 6 months, 1 year and 2 years postoperatively. Results: The mean total dose of 3.34 (standard deviation [SD] 1.38) million units of urokinase was administered during a mean of 5.18 (SD 2.28) days. Prior to discharge, Grade III (complete lysis) was achieved in 154 (36%) patients; Grade II (50-99% lysis) in 222 (52%); and Grade I (50% lysis) in 51 (12%). The major complications included one intracranial hemorrhage, one hematochezia, five gross hematuria, and one pulmonary embolism. Moreover, no death occurred in the study. Conclusions: Treatment of low-dose catheter-directed thrombosis is an efficacious and safe therapeutic approach in patients with DVT offering good long-term outcomes and minimal complications.

Copper oxide (CuxO) thin films were fabricated on SiO2/Si substrates by using a solution process. The coated CuxO gel films were treated using a vacuum annealing method at various temperatures (400–700 °C). X-ray diffraction results indicated that the vacuum annealing technique was effective in transforming CuO into Cu2O. Atomic force microscopy images showed that the mean grain size and the surface roughness of the resulting films increased with increasing annealing temperature. To verify the possibility of CuxO thin films as channel layers, the bottom gate structured thin film transistors (TFTs) were integrated. The electrical properties of the as-fabricated CuxO TFTs were improved with increasing processing temperature from 400 to 600 °C. The 600 °C-annealed CuxO TFT exhibited the best electrical performances, including a low threshold voltage of −3.2 V, a large field-effect mobility of 0.29 cm2 V−1 s−1, a small subthreshold swing of 0.8 V dec−1, and an on/off current ratio of 1.6 × 104, respectively. However, with increasing annealing temperature, the electrical properties of the CuxO TFTs were degraded dramatically. These results suggest that solution-processed CuxO TFTs achieved by using a one-step vacuum annealing technique could potentially be used for high-performance p-type electronic devices, which represents a great step towards the further development of low-cost and all-oxide CMOS electronics.

In this study, indium oxide (In2O3) thin-film transistors (TFTs) were fabricated by a solution-process at low temperature. A single precursor in a single solvent system was used as the In2O3 precursor to minimize the carbon-based impurities. The 300 °C-annealed In2O3 TFT with channel thickness of 12 nm exhibits enhanced performance, which shows saturation mobility (μsat) of 3.08 cm2 V−1 s−1, an on/off current ratio (Ion/Ioff) of 1.04 × 108, a threshold voltage (VT) of 12.7 V, and a subthreshold swing (SS) of 1.49 V per decade. Finally, high-performance In2O3 TFT based on solution-processed zirconium oxide dielectric was realized, which shows distinguished electrical performance (μsat = 13.01 cm2 V−1 s−1, Ion/Ioff = 1.09 × 107, VT = 1.2 V, and SS = 0.1 V per decade). These results suggest that solution-processed In2O3 TFTs could potentially be used for low-cost, low-temperature, and high-performance electronic devices.

Background Blood–brain barrier ( BBB ) disruption aggravates brain injury induced by intracerebral hemorrhage ( ICH ); however, the mechanisms of BBB damage caused by ICH remain elusive. Mfsd2a (major facilitator superfamily domain containing 2a) has been known to play an essential role in BBB formation and function. In this study, we investigated the role and underlying mechanisms of Mfsd2a in BBB permeability regulation after ICH . Methods and Results Using ICH models, we found that Mfsd2a protein expression in perihematomal brain tissues was significantly decreased after ICH . Knockdown and knockout of Mfsd2a in mice markedly increased BBB permeability, neurological deficit score, and brain water contents after ICH , and these were rescued by overexpressing Mfsd2a in perihematomas. Moreover, we found that Mfsd2a regulation of BBB permeability after ICH correlated with changes in vesicle number. Expression profiling of tight junction proteins showed no differences in Mfsd2a knockdown, Mfsd2a knockout, and Mfsd2a overexpression mice. However, using electron microscopy following ICH , we observed a significant increase in pinocytotic vesicle number in Mfsd2a knockout mice and decreased the number of pinocytotic vesicles in mouse brains with Mfsd2a overexpression. Finally, using multiple reaction monitoring, we screened out 3 vesicle trafficking–related proteins (Srgap2, Stx7, and Sec22b) from 31 vesicle trafficking‐related proteins that were markedly upregulated in Mfsd2a knockout mice compared with controls after ICH . Conclusions In summary, our results suggest that Mfsd2a may protect against BBB injury by inhibiting vesicular transcytosis following ICH .

Low-temperature solution processing opens a new window for the fabrication of oxide semiconductors due to its simple, low cost, and large-area uniformity. Herein, by using solution combustion synthesis (SCS), p-type Cu-doped NiO (Cu:NiO) thin films are fabricated at a temperature lower than 150 °C. The light doping of Cu substitutes the Ni site and disperses the valence band of the NiO matrix, leading to an enhanced p-type conductivity. Their integration into thin-film transistors (TFTs) demonstrates typical p-type semiconducting behavior. The optimized Cu5% NiO TFT exhibits outstanding electrical performance with a hole mobility of 1.5 cm2 V-1 s-1 , a large on/off current ratio of ≈104 , and clear switching characteristics under dynamic measurements. The employment of a high-k ZrO2 gate dielectric enables a low operating voltage (≤2 V) of the TFTs, which is critical for portable and battery-driven devices. The construction of a light-emitting-diode driving circuit demonstrates the high current control capability of the resultant TFTs. The achievement of the low-temperature-processed Cu:NiO thin films via SCS not only provides a feasible approach for low-cost flexible p-type oxide electronics but also represents a significant step toward the development of complementary metal-oxide semiconductor circuits.