1. Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application
- Author
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Jin-Ping Ao, Junye Wu, Xinke Liu, Xiaobo Li, Youming Lu, Taofei Pu, and Jiaying Yang
- Subjects
Materials science ,business.industry ,Schottky barrier ,Wide-bandgap semiconductor ,Linearity ,Schottky diode ,Thermionic emission ,Electronic, Optical and Magnetic Materials ,Anode ,Rectification ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Voltage - Abstract
AlGaN/GaN Schottky barrier diode (SBD) temperature sensor with low turn-on voltage was fabricated by employing the recessed anode structure. This AlGaN/GaN SBD demonstrates good rectification in a broad temperature scope from 298 to 473 K. Compared with common planar diode, the recessed anode SBD shows a relatively lower turn-on voltage and better Schottky contact characteristics. The temperature-dependent forward voltage at a fixed current displays great linearity, contributing to a sensitivity of about 1.0 mV/K. The calculated sensitivities exhibit the downtrend by increasing current level, which is in agreement with the thermionic emission (TE) model. The recessed anode AlGaN/GaN SBDs show good potential in temperature sensor application.
- Published
- 2021