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Whether financial agglomeration is conducive to improving the green efficiency of water resources is of great significance for China to realize water saving and consumption reduction, and green sustainable development. Based on the panel data of 30 provinces in China from 2006 to 2017, this paper uses the SBM model with undesirable output to measure the green efficiency of water resources in China and empirically examines the impact of financial agglomeration on the green efficiency of water resources. The results show that the green efficiency of water resources in China presents the “N” type fluctuation characteristic, and the overall trend is increasing. The mean value of green efficiency of water resources in China fluctuates around 0.6, which is at a medium level, and there is still a large room for improvement. Secondly, there are obvious spatial differences in China’s green efficiency of water resources, showing a gradient of “Eastern>Central>Western.” Thirdly, at the national level, financial agglomeration has a significant positive impact on the green efficiency of water resources, and there is an inverted “U”-shaped relationship between financial agglomeration and green efficiency of water resources. Fourthly, at the regional level, the impact of financial agglomeration on green efficiency of water resources has significant regional differences. Finally, based on the above conclusions, specific proposals for financial agglomeration to improve the green efficiency of water resources are put forward.

Interferon regulatory factor 9 (IRF9) acts as a negative regulator of sirtuin-1 (SIRT1) to participate in many diseases. However, the role of SIRT1 and IRF9 in hyperlipidemia acute pancreatitis associated with kidney injury is unclear. To explore the function of SIRT1 and IRF9 in hyperlipidemia acute pancreatitis associated with kidney injury and provide theoretical guidance for disease diagnosis and treatment. Model rats were established by intraperitoneal injection of 20% l-arginine. Apoptosis of kidney tissue was determined by TUNEL staining. Expressions of IRF9, SIRT1, p53, and acetylated p53 were detected by qRT-PCR and Western blot. Dual-Luciferase Reporter Assay was carried out to validate the regulation of IRF9 on SIRT1. Pancreatic and renal injury was more serious, and apoptosis of kidney epithelial cells increased in acute pancreatitis (AP) and hyperlipidemia acute pancreatitis (HLAP) group. IRF9, p53, and acetylated p53 were up-regulated, and SIRT1 was down-regulated in AP and HLAP group (p

In the present study, a comparative study on the influence of different laminated stacks driven by aomic layer deposition (ALD) on the interfacial and electrcial properties of high-k/Ge gate stacks passivated by trimethylaluminum (TMA) has been performed in detail via X-ray photoelectron spectroscopy (XPS) and electrical measurements. XPS measurements indicate that HfO2/Al2O3/Ge gate stacks can effectively inhibit the formation of Ge suboxides and a low-k germanate layer. Compared to Al2O3/HfO2 and HfO2/Al2O3/HfO2 gate stacks, the HfO2/Al2O3/Ge metal oxide semiconductor (MOS) capacitors exhibited improved electrical performance, including a maximum permittivity of 18.15, disappearing hysteresis, an almost neglected flat band voltage of 0.01 V, and a minimum leakage current density of 3.82 × 10-8 A/cm2 at room temperature. Especially, the leakage current mechanisms of Ge-MOS capacitors based on different laminated stacks measured at room temperature and low temperature (77-327 K) have been comprehensively analyzed. By comparing three different laminated gate stacks, it can be inferred that HfO2/Al2O3/Ge gate stacks have a potential application prospect in Ge-based microelectronic devices.

In this work, the effects of different Dy-doping concentrations and annealing temperatures on the interfacial chemistry and electrical properties of TMA-passivated HfDyOx/Ge gate stacks have been investigated systematically. The microstructural, optical, interfacial chemistry, and electrical characteristics of sputtering-driven HfDyOx gate dielectrics have been characterized by means of X-ray diffraction (XRD), UV-Vis transmission spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrical measurements. This work reveals that the interfacial chemistry evolution takes place via two competing processes, including oxide growth and oxide desorption. XPS analyses have confirmed that the 10 W-deposited targeted gate dielectrics display optimized interface characteristics, which can be attributed to the suppressed unstable Ge oxides and inhibition effects on inter-diffusion at the interface. Electrical observations show that the 10 W-driven HfDyOx/Ge MOS device without annealing treatment exhibits optimized electrical performance, including a larger permittivity of 22.4, a smaller flat band voltage of 0.07 V, vanishing hysteresis, a lowest oxide charge density of ∼1011 cm−2, and a lowest leakage current density of 2.31 × 10−8 A cm−2. Furthermore, the influences of doping and annealing conditions on the leakage current conduction mechanisms (CCMs) of HfDyOx/Ge MOS capacitors have also been investigated systematically. All of the experimental results indicate that TMA-passivated HfDyOx/Ge gate stacks with appropriate doping concentrations demonstrate potential application prospects for Ge-based MOSFET devices.

In this work, a series of ternary HfTiO and TiAlO films and quaternary HfTiAlO films prepared with different stoichiometric ratios via atomic layer deposition (ALD) were deposited on Si substrates. The interfacial properties, band alignments, and electrical characteristics were analyzed to evaluate the electrical performance of the corresponding metal–oxide–semiconductor (MOS) capacitors. Based on the characterization data, it can be noted that the permittivity of HfTiO increases on increasing the Ti content, while the deterioration of the film quality leads to an increased leakage current. For TiAlO, as the Al content increased gradually, the interface quality improved, but the corresponding permittivity was sacrificed. As for HfTiAlO, the addition of Ti and Al jointly in HfO2 could improve the interface performance, enlarge the energy band offset, enhance the dielectric constant, and reduce the leakage current simultaneously. The interfacial analysis and electrical characterization demonstrated that HfTiAlO with an ALD cycle ratio of Hf : Ti : Al = 6 : 1 : 1 had the most excellent film quality, interface performance and electrical properties, including a larger dielectric constant of 28.8, a larger conduction band offset with Si of 2.47 eV, and the lowest leakage current density of 1.11 × 10−5 A cm−2.

Layered molybdenum disulfide (MoS 2 ) is one of the representative two-dimensional (2D) semiconductors, offering a tantalizing prospect in the application of nanoelectronic devices and circuits. Here abnormal electrical and optoelectrical characteristics in transferred multilayer MoS 2 transistors are observed and discussed. Such phenomena can be explained by the MoS 2 intrinsic defects and the trapped charge impurities at the MoS 2 -dielectric and MoS 2 -MoS 2 interfaces, as well as its charge screening effect. Our findings highlight the significance of controlling the dielectric interface and the material quality of 2D semiconductors, which are critical for the reliability of future 2D nanoelectronic devices.

Background: Diagnosing chronic pulmonary aspergillosis is a major challenge in clinical practice. The development and validation of a novel, sensitive and specific assay for diagnosing chronic pulmonary aspergillosis is urgently needed.Methods: From April 2018 to June 2019, 53 patients with chronic pulmonary aspergillosis (CPA), 32 patients with community-acquired pneumonia (CAP) and 48 healthy controls were recruited from the First Affiliated Hospital of Guangzhou Medical University. Clinical characteristics and samples were collected at enrollment. All exhaled breath samples were analyzed offline using thermal desorption single-photon ionization time-of-flight mass spectrometry; to analyze the metabolic pathways of the characteristic volatile organic compounds, serum samples were subjected to ultrahigh-performance liquid chromatography.Results: We identified characteristic volatile organic compounds in patients with chronic pulmonary aspergillosis, which mainly consisted of phenol, neopentyl alcohol, toluene, limonene and ethylbenzene. These compounds were assessed using a logistic regression model. The sensitivity and specificity were 95.8 and 96.9% for discriminating patients in the CPA group from those in the CAP group and 95.8 and 97.9% for discriminating patients in the CPA group from healthy controls, respectively. The concentration of limonene (m/z 136) correlated significantly positively with anti-Aspergillus fumigatus IgG antibody titers (r = 0.420, P < 0.01). After antifungal treatment, serum IgG and the concentration of limonene (m/z 136) decreased in the subgroup of patients with chronic pulmonary aspergillosis.Conclusions: We identified VOCs that can be used as biomarkers for differential diagnosis and therapeutic response prediction in patients with chronic pulmonary aspergillosis.

In this work, the effects of atomic-layer-deposited (ALD) Al2O3 passivation layers with different thicknesses on the interface chemistry and electrical properties of sputtering-derived HfYO gate dielectrics on Si substrates have been investigated. The results of electrical measurements and X-ray photoelectron sepectroscopy (XPS) showed that 1-nm-thick Al2O3 passivation layer is optimized to obtain excellent electrical and interfacial properties for HfYO/Si gate stack. Then, the metal-oxide-semiconductor capacitors with HfYO/1-nm Al2O3/Si/Al gate stack were fabricated and annealed at different temperatures in forming gas (95% N2+5% H2). Capacitance-voltage (C-V) and current density-voltage (J-V) characteristics showed that the 250 °C-annealed HYO high-k gate dielectric thin film demonstrated the lowest border trapped oxide charge density (-3.3 × 1010 cm−2), smallest gate-leakage current (2.45 × 10-6 A/cm2 at 2 V) compared with other samples. Moreover, the annealing temperature dependent leakage current conduction mechanism for Al/HfYO/Al2O3/Si/Al MOS capacitor has been investigated systematically. Detailed electrical measurements reveal that Poole-Frenkle emission is the main dominant emission in the region of low and medium electric fields while direct tunneling is dominant conduction mechanism at high electric fields.

In current manuscript, a Ge metal-oxide-semiconductor (MOS) capacitor based on HfGdON/Ge gate stacks with an ALD-driven passivation layer has been fabricated, and its interfacial and electrical properties are compared with those of its counterparts that have not undergone passivation treatment. Electrical analyses revealed that the HfGdON/Al2O3/Ge MOS device exhibits improved performance, including larger permittivity, negligible hysteresis, reduced flat band voltage, good capacitance–voltage behavior, and lower interface state and border trapped oxide charge density. All of these improvements can be ascribed to the suppressed growth of unstable Ge oxides, thus reducing the defective states at or near the HfGdON/Ge interface and improving the interface quality. In addition, detailed analyses of the current conduction mechanisms (CCMs) for Ge MOS capacitors with different passivation treatment were investigated systematically.

Herein, a comparative study of the effects of atomic-layer-deposited (ALD) HfO2 and Al2O3 interfacial passivation layers (IPL) on the sputtering-derived HfDyOx (HDO)/Si gate stack has been systematically investigated. X-ray photoemission spectroscopy (XPS) measurements have confirmed that the ALD-driven IPL can effectively eliminate unstable native oxides on the substrates, and the inhibition effect on the formation of a low-k layer by the ALD HfO2 IPL is superior to that of the ALD Al2O3 IPL. Electrical observations have demonstrated that the HDO/HfO2/Si gate stack has improved performance, including a larger permittivity (22.1), negligible hysteresis (0.09 V), a small oxide charge density (∼1011 cm−2) and the smallest gate leakage current density (1.85 × 10−6 A cm−2). Detailed analyses on the leakage current conduction mechanisms (CCMs) for HDO/Si MOS capacitors with different IPLs, measured at room and low temperatures, have been carried out. All the experimental results indicate the potential application of the HDO/HfO2 gate stack as a promising passivation candidate for the future microelectronics devices.

The application of smart metering terminals (SMTs) can collect online data of electricity customers, which would help microgrid system to obtain more accurate information of electricity load demand by edge-computing. Hence reasonable dispatch schemes can be made. In this paper, a two-step multi-objective optimization framework for microgrid scheduling problem is proposed based on cloud-edge computing. A typical microgrid structure with smart metering terminals (SMTs) is introduced and the cloud-edge computing framework is designed, in which the central energy management system (CEMS) is utilized to compute the day-ahead microgrid economical/environmental scheduling problem on the cloud side by forecast data, and the edge-computing servers are applied to re-compute the local optimum schemes on the edge-side during the operation process. Thereafter, the two-step multi-objective optimization strategy is proposed taking advantages of the global computing in cloud-side and the distributed computing in edge-side. The day-ahead global optimization model and the online local optimization model are employed to meet different goals by the two steps. Experimental results show that the proposed strategy is efficient in dealing with the microgrid scheduling problem to reduce cost and emission and can take account of the forecast data errors as well as the global optimum information.

We presented the performance of a Chinese-made cryptococcal glucuronoxylomannan (GXM) antigen test using serum and bronchoalveolar lavage fluid (BALF) samples in the HIV-negative Chinese population.Between February 2017 and January 2019, HIV-negative patients with pulmonary cryptococcosis were recruited and followed-up every three months, including completion of a chest CT examination and collection of serum and BALF samples.Here, thirty-seven confirmed and ten clinically diagnosed patients were recruited. Furthermore, samples from 174 noncryptococcosis patients that may cause false positives were also collected. The sensitivity of a lateral flow assay (LFA) for detecting cryptococcal GXM antigen in serum and BALF samples from confirmed cases was 97% and 95%, respectively, and the specificity was 98.2% and 93%, respectively, and the differences in these values between the BALF and serum samples were not significant. The serum cryptococcal GXM antigen value showed a positive correlation (r: 0.581, p 0.001) with pulmonary lesion size, while the BALF value showed no correlation (r: 0.253, p: 0.13). The positivity rate of BALF was higher than that of serum when the diameter of the pulmonary lesion was small (diameter less than 20 mm). Moreover, the serum cryptococcal GXM antigen levels showed an overall decreasing trend with the decrease in pulmonary lesion size after antifungal therapy in patient follow-up.The Chinese-made cryptococcal GXM antigen test has better sensitivity and specificity for diagnosing pulmonary cryptococcosis in the HIV-negative Chinese population, and it could be used to diagnose and to monitor this disease.

Increases in concerns regarding system safety and reliability challenge nuclear energy's attractiveness among the public. To alleviate such concerns, being able to prevent a developing event from escalating into a severe accident is indispensable, which requires an abnormal event to be identified in its early stage. In this study, several long short-term memory (LSTM)-based networks for abnormal event detection, identification, and isolation are proposed to help maintain the safe operations of nuclear power plants (NPPs). With the proposed model for predicting normal operation sensing readings, an abnormal event is detected if the discrepancies between the acquired and predicted readings exceed a preset threshold. Through LSTM's superior capability in time series analysis, the process information for sensing reading generation and the interrelations among the sensors in the event recordings can be extracted to enable valid event identification. Via the proposed autoencoders for sensing reading reconstruction, the plausible type for the ongoing event can be further verified to prevent an unseen event from being wrongly linked to any class in the event set. Results from experiments utilizing data of 13 event classes generated by a Maanshan NPP simulator illustrate the efficacy of the proposed models.

The miniaturized synthetic aperture radar (MiniSAR) signal processing system is designed and implemented in this paper, which is able to deal with chirped SAR signals based on FPGA. In this design, the Polar Format Algorithm (PFA) using the principle of chirp scaling (PCS) for range processing and Sinc interpolation for azimuth processing can achieve high precision results and increase speed significantly. Meanwhile, the phase gradient autofocus (PGA) and the geometric correction (GC) are applied to estimate and compensate for the residual phase error accurately and realize wavefront curvature correction caused by PFA. The system uses the Floating-Point IP cores and pipeline structure to achieve high-speed floating-point data computation, and uses a smart scheme to realize the transposition of matrix data demanded by the system algorithm with DDR3 SDRAM. The system is built on Virtex7-XC7VX690T evaluation board, and it takes 2.1s to obtain 4K*2K complex-image in single precision. Point target simulation has validated the presented methodology, and the real data processing results verify the reliability and stability of the proposed system.

Designing and implementing a Video SAR (Video Synthetic Aperture Radar, SAR) high-speed processing system through a Field Programmable Gate Array (FPGA), which can achieve an imaging processing speed of 5 frames per second. This paper proposes a high-speed processing scheme based on PFA imaging algorithm, which lays a foundation for the real-time performance of video SAR imaging processing. The system realizes radar imaging multi-pulse parallel range processing and high-precision SINC interpolation parallel azimuth processing. The design is verified by the Xilinx Virtex7-XC7VX690T-2FFG1761 development board. The test results show that the system can achieve $2048^{\ast}2048$ points single-precision complex image imaging processing in 0.18 seconds at a frequency of 200MHz. The real data processing results verify the reliability and effectiveness of the system.

The effect of sputtering power and annealing temperature on the microstructure, optical and electrical properties of sputtering-derived Yb2O3 high-k gate dielectrics on Si substrate have been investigated systematically. Based on measurements by ultraviolet-visible spectroscope (UV-Vis) and spectroscopic ellipsometry (SE), the increase in band gap and reduction in refractive index have been detected. Structural analyses by x-ray diffraction (XRD) reveal that the Yb2O3 thin films exhibit a cubic phase at higher annealing temperature. X-ray photoelectron spectroscopy (XPS) analyses demonstrate the decreased Yb silicate and low-k SiO2 interfacial layer for the samples annealed at 300 °C. Electrical measurements have indicated that Yb2O3/Si gate stacks annealed at 300 °C shows excellent dielectric performance with leakage current density of 3.66 × 10−8 A/cm2 at applied voltage of 1 V. As a supplement, the leakage current conduction mechanisms of MOS capacitor for different annealing temperature have been discussed systematically.

In this paper, we first investigate secure communications for a two-hop interference relay system in the wireless Internet of Things (IoT), where K source-destination pairs communicate in the presence of an eavesdropper. Explicitly, we jointly design source, relay and destination matrices upon minimizing total mean-squared error (MSE) of all legitimate destinations while keeping the MSE at eavesdropper above a certain threshold. We illuminate that the joint design of the source, relay and destination matrices subject to both secrecy and transmit power constraints. More specifically, we proposed an efficient iterative distributed algorithm to simplify the process of the joint design for optimal source, relay and destination matrices. Furthermore, the convergence of the iterative distributed algorithm is described. Additionally, the performances of the proposed algorithm, including both its secrecy rate and MSE, are characterized with the aid of simulation results. We demonstrate that our proposed algorithm outperforms the traditional approach. As a benefit, secure communications can be guaranteed by using the proposed algorithm for the multiple input multiple output (MIMO) interference relay IoT network in the presence of an eavesdropper.

Receptor for activated C kinase 1 (RACK1) is up-regulated in hepatocellular carcinoma (HCC) and has been reported to augment c-Jun N-terminal protein kinase (JNK) activity in HCC SMMC-7721 cells. By contrast, activator protein-1, a downstream JNK transcription factor, has been revealed to mediate the overexpression of RACK1 in melanoma cells. Therefore, the association between RACK1 and JNK activity in HCC cells has yet to be completely elucidated. The present study analyzed the effects of RACK1 or JNK loss of function on the levels of RACK1 protein, JNK activity, cell proliferation and apoptosis induced by tumor necrosis factor-related apoptosis inducing ligand in HCC SMMC-7721 cells. It was found that JNK loss of function exhibited no effect on RACK1 expression, whereas a loss of RACK1 function led to reduced JNK activity in SMMC-7721 cells. RACK1 and JNK loss of function resulted in the impaired oncogenic growth of SMMC-7721 cells. The present data further support a pivotal role of RACK1 in mediating enhanced JNK activity in HCC cells and also indicate that a novel mechanism exists for RACK1 overexpression in HCC SMMC-7721 cells.

A novel Medium Voltage Direct Current (MVDC) circuit breaker consisting of a High-Speed Switch(HSS) and a bridge-type commutation branch, which is based on current injection, is proposed and analyzed in this paper. The commutation branch of this design adopts bridge type, which can break bidirectional fault current rapidly by controlling thyristors. Meanwhile, after fault current is commutated to the commutation branch completely, the freewheeling diodes can provide time for dielectric recovery with zero recovery voltage across HSS, which can improve the reliability of fault current breaking. The principle and operation sequence of this topology are described. Based on the simulation model, the breaking process in 10kV DC system with different fault current rates of rise are simulated. Besides, the relationship between the current commutation capability and the loop inductance is investigated. Finally, the prototype of 10kV DC circuit breaker is constructed, and the fault current breaking tests are carried out with breaking current of 20kA and above, which validate the feasibility and effectiveness of the topology and simulation model well.

The interfacial properties and electrical characteristics of atomic layer deposited Hf0.5Al0.5O/Si with different Al2O3 barrier layer thicknesses have been investigated. X-ray photoelectron spectroscopy measurements have shown that a 1-nm-thick Al2O3 buffer layer can effectively suppress the silicate formation and improve interfacial properties. Accordingly, the sample with a 1-nm-thick Al2O3 layer exhibits improved electrical properties, including the lowest density of oxide charge of 3.16 × 1010 cm−2, an interface charge density of 0.82 × 1011 cm−2 eV−1, and an oxide trapped charge density of 0.79 × 1011 cm−2. The reduced leakage current at an applied substrate voltage of 1 V is 3.28 × 10−6 A/cm2. Furthermore, the carrier transportation mechanism of Al/Hf0.5Al0.5O/Al2O3/Si/Al MOS device has been researched systematically. Through the analysis, it could be found that for all samples, thermionic emission and Poole–Frenkel emission are dominant mechanisms of carrier transport under a low electric field region, as well as Fowler–Nordheim tunneling is the main carrier transport mechanism at a high electric field region.

Concerned literature on four kinds of andrographolide injections in recent 15 years were searched in CNKI, Wanfang and VIP databases. The adverse drug reaction(ADR) cases of Chuanhuning, Yanhuning, Xiyanping and Lianbizhi injections were classified and analyzed statistically, including a total of 194 articles and 3 479 cases. The ADR clinical characteristics and occurrence regularity of these four andrographolide injections were analyzed and compared from the gender, age, primary disease, emergence time of ADR, clinical manifestation, allergy history, dosage, prognosis and combined medication of the patients. It is useful to provide valuable references for rational use of these andrographolide injections in clinical practice.

Transforming growth factor-β1 (TGF-β1)/Smad signaling has a central role in the pathogenesis of renal fibrosis. Smad3 and Smad4 are pro-fibrotic, while Smad2 is anti-fibrotic. However, these Smads form heterogeneous complexes, the functions of which are poorly understood. Here we studied Smad complex function in renal fibrosis using the mouse model of unilateral ureteric obstruction. Mice heterozygous for Smad3/4 (Smad3/4+/-) exhibited substantial protection from renal fibrosis through day 7 of obstruction, whereas Smad2/3+/- and Smad2/4+/- mice showed only modest protection. Formation of Smad3/Smad4/CDK9 complexes was an early event following obstruction in wild-type mice, which involved nuclear phosphorylation of the linker regions of Smad3. Significantly, Smad3 or Smad4 deficiency decreased the formation of Smad4/CDK9 or Smad3/CDK9 complex, Smad3 linker phosphorylation, and fibrosis but at different degrees. In vitro, TGF-β1 stimulation of collagen I promoter activity involved formation of Smad3/Smad4/CDK9 complexes, and overexpression of each component gave additive increases in collagen promoter activity. Co-administration of a CDK9 inhibitor and Smad3-specific inhibition achieved better protection from TGF-β1-induced fibrotic response in vitro and renal interstitial fibrosis in vivo. Thus formation of Smad3/Smad4/CDK9 complex drives renal fibrosis during ureteral obstruction. Formation of this complex represents a novel target for antifibrotic therapies.

Paying attention to the growing overall carbon emissions of the waterway transportation industry, a systematical and scientific carbon emission evaluation system for inland vessels was built. Applying AHP to determine and sort the weight of each index reduces the randomness in the evaluation and provides reference for developing evaluation standards. This also plays a guiding role in saving energy and reducing emission of inland vessels. Finally, some suggestions are put forward to reduce the carbon emissions of inland vessel, boost operation economic efficiency and enhance global competitiveness of shipping industry.

BACKGROUND: The role of naturally occurring regulatory T cells (Treg) in the control of the development of systemic lupus erythematosus (SLE) has not been well defined. Therefore, we dissect the phenotypically heterogeneous CD4(+)FoxP3(+) T cells into subpopulations during the dynamic SLE development. METHODLOGY/PRINCIPAL FINDINGS: To evaluate the proliferative and suppressive capacities of different CD4(+) T cell subgroups between active SLE patients and healthy donors, we employed CD45RA and CD25 as surface markers and carboxyfluorescein diacetatesuccinimidyl ester (CFSE) dilution assay. In addition, multiplex cytokines expression in active SLE patients was assessed using Luminex assay. Here, we showed a significant increase in the frequency of CD45RA(+)FoxP3(low) naive Treg cells (nTreg cells) and CD45RA(-)FoxP3(low) (non-Treg) cells in patients with active SLE. In active SLE patients, the increased proportions of CD45RA(+)FoxP3(low) nTreg cells were positively correlated with the disease based on SLE disease activity index (SLEDAI) and the status of serum anti-dsDNA antibodies. We found that the surface marker combination of CD25(+)CD45RA(+) can be used to defined CD45RA(+)FoxP3(low) nTreg cells for functional assays, wherein nTreg cells from active SLE patients demonstrated defective suppression function. A significant correlation was observed between inflammatory cytokines, such as IL-6, IL-12 and TNFα, and the frequency of nTreg cells. Furthermore, the CD45RA(+)FoxP3(low) nTreg cell subset increased when cultured with SLE serum compared to healthy donor serum, suggesting that the elevated inflammatory cytokines of SLE serum may promote nTreg cell proliferation/expansion. CONCLUSIONS/SIGNIFICANCE: Our results indicate that impaired numbers of functional CD45RA(+)FoxP3(low) naive Treg cell and CD45RA(-)FoxP3(low) non-suppressive T cell subsets in inflammatory conditions may contribute to SLE development. Therefore, analysis of subsets of FoxP3(+) T cells, using a combination of FoxP3, CD25 and CD45RA, rather than whole FoxP3(+) T cells, will help us to better understand the pathogenesis of SLE and may lead to the development of new therapeutic strategies.