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Your search keyword '"K. Fedus"' showing total 3 results
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3 results on '"K. Fedus"'

1. Image formation and applications to third order nonlinear optical measurement techniques

Author

Coulombier, Q., Sergent, M., Trolès, J., Canat, G., Vasseur, O., Bourdon, P., Cathelinaud, M., Zhang, X.H., M. Cathelinaud, M. Cathelinaud, Nazabal, Virginie, F. Charpentier, F. Charpentier, J. L. Adam, J., K. Fedus, K. Fedus, G. Boudebs, G. Boudebs, M. Chauvet, M. Chauvet, G. Fanjou, G. Fanjou, K. P. Huy, K., T. Billeton, T Billeton, S. P. Gorza, S., W. D. Shen, W., Manzani, Danilo, Napoli, Mariana, Ribeiro, Sidney J.L., de Araújo, Cid, Besse, Valentin, Leblond, Hervé, Boudebs, Georges, Fedus, K., Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut des Sciences Moléculaires de Marseille (ISM2), Aix Marseille Université (AMU)-École Centrale de Marseille (ECM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institute of Chemistry, São Paulo State University, Departamento de Fisica, Universidade Federal de Pernambuco, Universidade Federal de Pernambuco [Recife] (UFPE), Laboratoire de Photonique d'Angers (LPHIA), Université d'Angers (UA), Propriétés Optiques des Matériaux et Applications (POMA), Université d'Angers (UA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Marseille (ECM)-Institut de Chimie du CNRS (INC), and Centre National de la Recherche Scientifique (CNRS)-Université d'Angers (UA)

Subjects
Diffraction, Physics, Image formation, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Helmholtz equation, business.industry, Acoustics, Nonlinear optics, 01 natural sciences, Signal, 010309 optics, Optics, Simple (abstract algebra), 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Sensitivity (control systems), 010306 general physics, business, Diffraction grating, ComputingMilieux_MISCELLANEOUS
Abstract

We perform third order nonlinear optical characterizations using I-scan or Z-scan techniques inside a 4-f system. Simulation is performed based on Helmholtz equation to provide simple expressions relating the signal to the phase shift (in different wave-mixing configurations). Optimization of the measurement is performed.

Published
2012
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2. Second-order susceptibility χ(2) in Si waveguides

Author

Alessandro Pitanti, B. Dierre, Lorenzo Pavesi, E. Borga, A. Yeremian, Mher Ghulinyan, Paolo Bettotti, K. Fedus, R. Pierobon, Massimo Cazzanelli, G. Pucker, and Federica Bianco

Subjects
Silicon photonics, Materials science, Silicon, business.industry, Hybrid silicon laser, Analytical chemistry, chemistry.chemical_element, Nonlinear optics, Nanosecond, Waveguide (optics), Overlayer, chemistry, Femtosecond, Optoelectronics, business
Abstract

Tensile strained-silicon waveguides were produced by LPCVD (780 °C) by depositing a 150 nm-thick Si 3 N 4 overlayer. Nonlinear nanosecond and femtosecond transmission experiments indicated the presence of a significant χ(2) in the bulk silicon.

Published
2011
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3. Two-dimensional micro-Raman mapping of stress and strain distributions in strained silicon waveguides

Author

Massimo Cazzanelli, Mher Ghulinyan, R. Pierobon, K. Fedus, Francesco Enrichi, Federica Bianco, Georg Pucker, and Lorenzo Pavesi

Subjects
inorganic chemicals, Silicon, Materials science, Raman mapping, chemistry.chemical_element, law.invention, stress, symbols.namesake, chemistry.chemical_compound, strain, Optics, law, Materials Chemistry, Electrical and Electronic Engineering, business.industry, Scattering, Stress–strain curve, technology, industry, and agriculture, Strained silicon, waveguides, Condensed Matter Physics, Cladding (fiber optics), Electronic, Optical and Magnetic Materials, Raman mapping, Silicon, stress, strain, waveguides, Silicon nitride, chemistry, symbols, Optoelectronics, business, Raman spectroscopy, Waveguide
Abstract

Micro-Raman scattering experiments were performed on strained silicon waveguides designed for nonlinear optical experiments. Thin stressing silicon nitride (Si3N4 or SiNx) cladding layers, deposited on a light-guiding silicon core layer, strain silicon to enable χ(2), the second-order nonlinear susceptibility. Different deposition treatments allow varying the applied stress. The resulting strained waveguides are investigated by micro-Raman confocal spectroscopy performed on the waveguide facet. By modelling the measured Raman shifts, the local stress and strain are extracted. Thus, two-dimensional maps of the stress distribution as a function of the SiNx deposition parameters are drawn. A comparison of different samples allows underlying the non-uniformity of resulting strain.

Published
2012
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