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The preparation of a highly ordered ZnO/GaN nano-heterojunction array is introduced. Combining the merits of nanolaser and plasmonic Fabry–Perot nanolaser, we designed and fabricated an ultraviolet nanolaser with Ag-dielectric hybrid film-coated n-ZnO nanowires (NWs) array on p-GaN substrate. Ultraviolet random lasing behavior from the ZnO/GaN nano-heterojunction array has been demonstrated with both optical and electrical pumping, where the surface plasmon enhancement effect in the lasing process is discussed. The numerical simulation results show the surface plasmon at the Ag/SiO2/ZnO interface may be excited and strongly compress the wave-guided modes, which were found to optimize the lasing spectrum and increase the light intensity compared to the bare NWs array. With the electric pumping of the device, the electroluminescence parameters are characterized and the underlying mechanism is also discussed.

Metallic nanostructures array has promising potential applications in nano-photonic devices based on surface plasmon resonance. In this letter, we report the fabrication of silver nanostructured grating pattern on periodically poled lithium niobate (PPLN) single crystal by the site-selective photo-deposition with UV-light irradiation. The microstructure of the silver nanostructured grating pattern on the positive domains was characterized by the DIC microscope and AFM. The SNOM characterization shows the enhancement of optical field due to the surface plasmon resonance (SPR) on silver NPs. Optical transmission spectra of silver nanostructured grating pattern show the silver NPs enhance the absorption.

Although synaptic behaviours of memristors have been widely demonstrated, implementation of an even simple artificial neural network is still a great challenge. In this work, we demonstrate the associative memory on the basis of a memristive Hopfield network. Different patterns can be stored into the memristive Hopfield network by tuning the resistance of the memristors, and the pre-stored patterns can be successfully retrieved directly or through some associative intermediate states, being analogous to the associative memory behaviour. Both single-associative memory and multi-associative memories can be realized with the memristive Hopfield network.

A resistive switching device based on a nickel-rich nickel oxide thin film, which exhibits inherent learning and memory-loss abilities, is reported in this work. The conductance of the device gradually increases and finally saturates with the number of voltage pulses (or voltage sweepings), which is analogous to the behavior of the short-term and long-term memory in the human brain. Furthermore, the number of the voltage pulses (or sweeping cycles) required to achieve a given conductance state increases with the interval between two consecutive voltage pulses (or sweeping cycles), which is attributed to the heat diffusion in the material of the conductive filaments formed in the nickel oxide thin film. The phenomenon resembles the behavior of the human brain, i.e., forgetting starts immediately after an impression, a larger interval of the impressions leads to more memory loss, thus the memorization needs more impressions to enhance.