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With the acceleration of globalization, trade between countries has become more and more frequent; as a kind of commonly used heavy lifting equipment, the influence of the quayside crane on environment during the production stage has attracted wide attention. In this paper, the world’s largest quayside crane manufacturer was selected as the study object. The environmental load of five workshops (NC pre-treatment workshop, assembling workshop, sand milling workshop, painting workshop and steel structure workshop) involved in the quayside crane (QC) production stage was studied by using the ReCiPe model; the normalized values of the 14 overall pollutants in each workshop were 1248.64, 576.75, 214.27, 85.26 and 76.69, respectively. The results showed that the sand milling workshop was the biggest electricity consumer of all processes. The sensitivity analysis revealed that the environmental pollution load was the most sensitive to the electricity consumption; the scenario analysis indicated that with the proportion of China’s renewable resources in the process of electricity generation becoming larger and larger, in comparison with that of in 2015, up to 2050, the quantity of PM 2.5 generated during the production process of QC will drop from 832 to 408 kg (high-speed development)/342 kg (low-speed development), and it is expected that the China’s haze problem could be effectively curbed in the future. Finally, the research results of this article also pointed out the direction for the future technical innovation of the QC industry.

Molybdenum disulfide (MoS2) is investigated as one typical kind of two dimensional (2D) materials for developing various kinds of electronic devices. Here, we report a giant lateral photovoltaic effect (LPE) in a MoS2/SiO2/Si p-i-n junction. MoS2 films are deposited on Si substrates using magnetron sputtering technique and a SiO2 layer is incorporated to perform the modification on the MoS2/Si interface. After the first 5-nm-thickness horizontally lying layer on the SiO2 layer, the atomic unit layers of S-Mo-S in the followed MoS2 film are almost perpendicular to the substrate surface and the vertically standing layered structure is formed. Owing to the interface modification of the SiO2 layer and the unique structure of the MoS2 film, a giant LPE is observed in the fabricated junction. The LPE shows a linear dependence on the position of the laser illumination and the considerably large sensitivity of 355.4 mV/mm is obtained with the fast response of 16.2 μs. The mechanisms to the LPE are unveiled by building the correlation between microstructures, energy-band alignment and optoelectrical properties of the MoS2/SiO2/Si junctions. The excellent LPE characteristics could make MoS2 films combined with SiO2/Si promising candidates for the application of high-performance position sensitive detectors.

Molybdenum disulfide (MoS 2 ) thin films are deposited onto silicon (Si) substrates using magnetron sputtering technique. Raman spectra show that the out-of-plane vibration is preferentially excited for the film. X-ray diffraction patterns further illustrate that the deposited MoS 2 films have the preferential [100] orientation. These results demonstrate that the unit layers of S Mo S in the film are perpendicular to the substrate. This can supply high-speed paths for the transportation of the electron carriers along the out-of-plane orientation. Due to the unique vertically standing layered structure of the MoS 2 film, the fabricated MoS 2 /Si sensor device exhibits excellent hydrogen (H 2 ) sensing properties. The device performance can be featured by a high sensitivity (687.3% under 100.0 ppm H 2 ), high detection resolution (a 1.0-ppm level), as well as fast response and recovery, and good reversibility. The sensing mechanisms were discussed based on the microstructural characteristics of the MoS 2 film and the energy-band alignment near the MoS 2 /Si interface. The MoS 2 /Si heterojunctions proposed in this work might open new avenues for the development of future high-performance sensor devices.

MoS2/Si hybrid solar cells are fabricated and the device performances are improved via metal Pd chemical doping. Due to the incorporation of the Pd atoms in the MoS2 films, the photovoltaic characteristics of the solar cell are enhanced significantly and a 375% enhancement of the power conversion efficiency can be obtained.

Amorphous carbon (a-C) thin films are deposited on p-type silicon (Si) substrates using magnetron sputtering technique and the photodetector devices based on the a-C/Si heterostructures are fabricated. The photosensing characteristics of the devices are investigated. Under light irradiation, the fabricated a-C/Si device exhibits obvious photovoltaic characteristics. This enables its application as a self-powered photodetector operated at zero bias voltage. The obtained results show that the device is highly sensitive to broadband wavelength from the ultraviolet to near-infrared light, showing a high detectivity of ∼2.9 × 1013 cm Hz1/2 W−1, as well as a high responsitivity of ∼292.5 mA W−1, and a fast response speed of ∼8.3 μs. The mechanisms to the self-powered photosensing characteristics are clarified by the determination of the energy-band alignment near the interface of the a-C/Si heterostructures.

In this work, a self-powered photodetector device is fabricated through the integration of a palladium-doped molybdenum disulfide thin film on silicon (Pd-MoS2/Si). The substitution of host Mo atoms with Pd dopants in the MoS2 film is revealed by structural and chemical analysis techniques. Due to the incorporation of Pd atoms into the MoS2 films, the photovoltaic characteristics of the fabricated Pd-MoS2/Si device were enhanced largely, promoting its application as a self-powered photodetector operated at zero bias voltage. The obtained results further show that the device is highly sensitive to broadband wavelengths from ultraviolet to near-infrared light (300-1100 nm). In particular, the Pd-MoS2/Si photodetector shows an ultra-high detectivity of ∼10(14) Jones (Jones = cm Hz(1/2) W(-1)), a responsivity of ∼654.0 mA W(-1), and an ultrafast response speed of ∼2.1 μs. The present work opens new avenues for developing high-performance photodetectors for optical communications and imaging techniques as well as optoelectronic circuits.

Service-oriented future internet architecture (SOFIA) is a clean-slate network architecture. In SOFIA, a service request is mainly processed through service resolution and network resource allocation. To realize the network resource allocation, we reference the idea of network virtualization and propose resource scheduling virtualization. In resource scheduling virtualization, a service request is abstracted as a virtual network (VN) and the network resources are allocated by mapping the VN onto the physical network. Resource scheduling virtualization provides centralized resource scheduling control within an autonomous system (AS) and achieves better controllability compared with the distributed schemes. Besides, resource scheduling virtualization supports multi-site selection as well. Meanwhile, we propose a collection of resource scheduling algorithms based on maximum resource tree (MRT) adapting to different scenarios. According to the simulation results, the proposed algorithms show good performance on the key metrics, such as acceptance ratio, revenue, cost and utilization. Moreover, the simulation results reveal that our algorithm is more efficient than the traditional ones.

Molybdenum disulfide (MoS 2 ) thin films were deposited on (1 0 0) Si substrates using magnetron sputtering technique and MoS 2 /Si heterojunctions were fabricated. X-ray diffraction patterns revealed that (0 0 1) crystal orientation is preferable in the films. Atomic force microscopy illustrated that the surface of the film is composed of dense nano-level grains. The current–voltage characteristics of the heterojunctions were investigated. The results showed that the heterojunctions exhibited obvious sensing properties to hydrogen gas (H 2 ) at room temperature (RT) when reverse voltages were applied on the heterojunctions. The sensing performance was featured by a high sensitivity, fast response and recovery, as well as good reversibility, and stable steady states. The sensing mechanisms were discussed in terms of the energy-band structure of the MoS 2 /Si heterojunction.

Bulk-like molybdenum disulfide (MoS2) thin films were deposited on Si substrates using a dc magnetron sputtering technique and n-MoS2/p-Si junctions were fabricated at room temperature (RT) and 400 °C, respectively. The typical oscillating modes of E12g and A1g were shown in the Raman spectra of the as-grown MoS2 films. Atomic force microscopy illustrated that the surfaces of the films were composed of dense nanoscale grains and scanning electron microscopy revealed the existence of large quantities of pores in the surface. The current–voltage curves of the junctions showed obvious rectifying characteristics due to the energy-band bending near the interface of MoS2/Si. The fabricated junctions exhibited humidity-dependent electrical properties. Compared with the one with the MoS2 film deposited at RT, the junction fabricated at 400 °C showed much more obvious sensing properties to humid gas. In particular, the sensitivity of the device could be tuned by external electrical fields. In the forward voltage range, the currents increased significantly after the junction was exposed to humid conditions. The response increased with increasing voltage and reached a saturated value after V = 1.9 V. The sensing performance featured high sensitivity, fast response and recovery. The junction current in the reverse voltage range decreased under the humid condition. This was contrary to that in the forward voltage range. We also studied the dependence of the sensing response on humidity levels. An almost linear correlation was obtained in the measured range of humidity levels. The sensing mechanisms of the MoS2/Si heterojunction were proposed.

A solar cell based on the n-MoS2/i-SiO2/p-Si heterojunction is fabricated. The device exhibits a high power-conversion efficiency of 4.5% due to the incorporation of a nano-scale SiO2 buffer into the MoS2/Si interface. The present device architectures are envisaged as potentially valuable candidates for high-performance photovoltaic devices.

Through real time crawling network topology structure of Tibetan web, analyzing the topology structure, first of all do the community division to find the nodes with the weak ties features by network topology structure and the theory of the community division. At the beginning of the immune, the nodes with weak ties are immune first, then the maximum degree of acquaintance immunization strategy were used according to the structure features of the community. Through analyzing the experimental data, the computation and immune cost of immunization strategy proposed in this paper are relatively smaller, and the immune effect are better, the method can effectively reduce the harm of the virus spreading to the network.

Correction for ‘Enhanced photovoltaic characteristics of MoS2/Si hybrid solar cells by metal Pd chemical doping’ by L. Z. Hao et al., RSC Adv., 2016, 6, 1346–1350.