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The Micro-bridge structure pays an important role in the mechanical support, thermal isolation and electrical connection for the UFPA detector, the quality of which has a direct effect on the imaging performance of the UFPA detector. A kind of Micro-bridge pixel is provided in this paper with thick-film pixel size of 360μm×360μm and desk-type adiabatic frame support, and the analysis results by FEM show that the minor thermal conductivity G and high responsivity can be obtained.

A thick film array of high sensitive UFPA detector, with 16×16 units, is described in this paper. A micromachining capacitive pixel structure of infrared detector is provided, with the doped (Ba, Sr) TiO3 (BST) thick film as sensitive material. The key factors that affect the detector performance are described, and the basic physical and electrical parameters of ferroelectric materials that the detector needs are given. In addition, the heat insulation technique and the corresponding parameters are provided. The capacitance increment of pixel for this structure is approximately equal to that of infrared detector with equivalent sensitive area, and then the parasitic capacitance between the pixel and substrate electrode lead is reduced. It is easy to design the integrated circuit because the infrared detector with this structure needs only low precision for the circuit. This design idea for array structure of infrared matches the development trend of structure design of infrared focal plane pixel with large array, which paves the way to develop new UFPA detector.