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Inline electron holography, the recovery of amplitude and phase of an electron wave function having passed through a thin specimen from a focal series recorded in a transmission electron microscope is being applied in many labs worldwide. At medium range magnification (i.e. typically ≥ 0 . 8 nm where the lattice of small unit cell crystals such as silicon is not resolved), where the defocus needs to be varied over a rather large range of several hundred nm or even μ m, the retrieval of low spatial frequency information is severely affected by the choice of experimental parameters as well as the way of data normalization. Methods to quantitatively analyze the reliability of phase maps obtained by inline electron holography are presented, and data recorded and processed in different ways are compared. While, even under optimized conditions, the phase reconstructed from an experimental focal series still lacks very low spatial frequency components, regularization schemes exist and are demonstrated to effectively hide artifacts associated with this lack of information.

While GeSn alloys with high Sn content constitute direct group-IV semiconductors, their growth on Si remains challenging. The deposition of a few monolayers of pure Sn on Ge and their overgrowth with Ge using molecular beam epitaxy can be a means of obtaining Sn-rich quantum wells with very high Sn content while maintaining high crystal quality. Here, we provide structural and compositional information on such structures with very high accuracy. Based on our characterization results we theoretically predict transition energies and compare them with experimental results from photoluminescence measurements. Our results constitute the groundwork for tuning the molecular beam epitaxy based growth of Sn-rich quantum wells and dots for applications in electronic and optoelectronic devices.

Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

Electron energy-loss spectroscopy and energy-dispersive X-ray spectroscopy are two of the most common means for chemical analysis in the scanning transmission electron microscope. The marked progress of the instrumentation hardware has made chemical analysis at atomic resolution readily possible nowadays. However, the acquisition and interpretation of atomically resolved spectra can still be problematic due to image distortions and poor signal-to-noise ratio of the spectra, especially for investigation of energy-loss near-edge fine structures. By combining multi-frame spectrum imaging and automatic energy-offset correction, we developed a spectrum imaging technique implemented into customized DigitalMicrograph scripts for suppressing image distortions and improving the signal-to-noise ratio. With practical examples, i.e. SrTiO 3 bulk material and Sr-doped La 2 CuO 4 superlattices, we demonstrate the improvement of elemental mapping and the EELS spectrum quality, which opens up new possibilities for atomically resolved EELS fine structure mapping.

We propose a simple system to investigate the influence of microstructure on the resistive switching behavior via bi-crystal CuO nanowires. CuO nanowires are prepared by thermally oxidizing transmission electron microscopy copper grids in air. Single-crystal and bi-crystal CuO nanowires can be selectively obtained by adjusting the temperature. The devices made of single-crystal nanowires follow Ohm’s law, with a high resistance, within the sweeping voltage range of 0–4 V, whereas those made of bi-crystal nanowires exhibit threshold and memory resistive switching behaviors, which are due to the enrichment of copper ions in the grain boundaries of bi-crystal CuO nanowires providing sources for the formation of conductive filaments. Moreover, the bi-crystal nanowires with higher defect densities in grain boundaries result in lower threshold voltages of switching from high to low resistance states. The threshold resistive switching behavior can be turned into memory resistive switching behavior by increasing the thickness of the device electrodes or reducing the compliance current. The endurance of memory resistive switching through the pre-defined conduction paths in the single grain boundaries of bi-crystal CuO nanowires is at least 1000 cycles without any performance deterioration. This high reliability is ascribed to the single conductive filaments.

The surface effect on the photodetection of metal oxide nanostructures acting as a double-edged sword achieves ultrahigh photogain but unavoidably prolongs the response time due to slow oxygen adsorption/desorption processes. In this study, we break the compromise to enhance the UV photogain by 3 orders of magnitude as well as increase the photoresponse speed by 5 times via incorporating open-circuit p–n nanoscale heterojunctions (NHJs) by forming single-crystalline p-NiO nanoparticles on n-ZnO nanowires. This is because the formation of NHJs enhances surface band bending of ZnO nanowires, improving the spatial separation efficiency of photogenerated electrons and holes, and passivates the ZnO surfaces by minimizing the interaction of photocarriers with chemisorbed oxygen molecules. The concept using NHJs explores a new pathway toward ultrafast and supersensitive photodetection.