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Parametric resonance and amplification are important in both fundamental physics and technological applications. Here we report very high frequency (VHF) parametric resonators and mechanical-domain amplifiers based on nanoelectromechanical systems (NEMS). Compound mechanical nanostructures patterned by multilayer, top-down nanofabrication are read out by a novel scheme that parametrically modulates longitudinal stress in doubly clamped beam NEMS resonators. Parametric pumping and signal amplification are demonstrated for VHF resonators up to approximately 130 MHz and provide useful enhancement of both resonance signal amplitude and quality factor. We find that Joule heating and reduced thermal conductance in these nanostructures ultimately impose an upper limit to device performance. We develop a theoretical model to account for both the parametric response and nonequilibrium thermal transport in these composite nanostructures. The results closely conform to our experimental observations, elucidate the frequency and threshold-voltage scaling in parametric VHF NEMS resonators and sensors, and establish the ultimate sensitivity limits of this approach.

Parametric amplification in nanomechanical structures is demonstrated by modulating a purely intrinsic mechanical parameter of the system—the stress—via piezoelectric electromechanical coupling. Large resonance amplitude and quality factor enhancement due to parametric pumping are observed under both vacuum and ambient pressure conditions. Exploration of the region of parametric instability yields results that agree with parametric amplification theory.

We report experimental realization of very thin suspended SiC nanowires (NWs), with widths as small as 20nm, via top-down lithography-nanomachining processes. This enables very high frequency (VHF) nanoscale electromechanical resonators with remarkable performance (e.g., resonance frequency f 0 ∼100MHz, and quality factor Q≫1000) at room temperature. Radio-frequency (RF) characterization of these resonators is achieved by engineering efficient magnetomotive signal transduction into a new compact apparatus, and by enhancing capacitive detection with impedance-matching circuits. Novel designs of top-down SiC NWs with multiple coupling gates lead to demonstrations of devices with versatile and advanced functions in both resonant and static operations.

Efficient actuation is crucial to obtaining optimal performance from nanoelectromechanical systems (NEMS). We employed epitaxial piezoelectric semiconductors to obtain efficient and fully integrated NEMS actuation, which is based on exploitation of the interaction between piezoelectric strain and built-in charge depletion. The underlying actuation mechanism in these depletion-mediated NEMS becomes important only for devices with dimensions approaching semiconductor depletion lengths. The induced actuation forces are controlled electrically, and resonant excitation approaching single-electron efficiency is demonstrated. The fundamental electromechanical coupling itself can be programmed by heterostructure band engineering, externally controllable charge depletion, and crystallographic orientation. These attributes are combined to realize a prototype, mechanically based, exclusive-or logic element.

Due to low power operation, intrinsic integrability and compatibility with CMOS processing, aluminum nitride (AlN) piezoelectric (PZE) microcantilevers are a very attractive paradigm for resonant gas sensing. In this paper, we theoretically investigate their ultimate limit of detection and enunciate design rules for performance optimization. The reduction of the AlN layer thickness is found to be critical. We further report the successful development and implementation in cantilever structures with a 50 nm thick active PZE AlN layer. Material characterizations demonstrate that the PZE e_(31) coefficient can remain as high as 0.8 C m^(−2). Electrically transduced frequency responses of the fabricated devices are in good agreement with analytical predictions. Finally, we demonstrate the excellent frequency stability with a 10^(−8) minimum Allan deviation. This exceptionally low noise operation allows us to expect a limit of detection as low as 53 zg µm^(−2) and demonstrate the strong potential of AlN PZE microcantilevers for high resolution gas detection.

We demonstrate piezoelectrically actuated, electrically tunable nanomechanical resonators based on multilayers containing a 100-nm-thin aluminum nitride (AlN) layer. Efficient piezoelectric actuation of very high frequency fundamental flexural modes up to ~80 MHz is demonstrated at room temperature. Thermomechanical fluctuations of AlN cantilevers measured by optical interferometry enable calibration of the transduction responsivity and displacement sensitivities of the resonators. Measurements and analyses show that the 100 nm AlN layer employed has an excellent piezoelectric coefficient, d_(31)=2.4 pm/V. Doubly clamped AlN beams exhibit significant frequency tuning behavior with applied dc voltage.